Influence of band bending and polarization on the valence band offset measured by x-ray photoelectron spectroscopy

The influence of band bending and polarization on the valence band offset measured by x-ray photoelectron spectroscopy (XPS) is discussed, and a modification method based on a modified self-consistent calculation is proposed to eliminate the influence and thus increasing the precision of XPS. Considering the spontaneous polarization at the surfaces and interfaces and the different positions of Fermi levels at the surfaces, we compare the energy band structures of Al/Ga-polar AlN/GaN and N-polar GaN/AlN heterojunctions, and give corrections to the XPS-measured valence band offsets. Other AlN/GaN heterojunctions and the piezoelectric polarization are also introduced and discussed in this paper.

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Approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-06-18T14:46:50Z (GMT) No. of bitstreams: 1 Influence of band bending and polarization on the valence band offset measured by x-ray photoelectron spectroscopy.pdf: 313342 bytes, checksum: 95462c50b567ba172d7d01530378c801 (MD5)

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This work was supported by National Science Foundation of China (Grant Nos. 60776015 and 60976008), the Special Funds for Major State Basic Research Project (973 program) of China (Grant No. 2006CB604907), and the 863 High Technology R&D Program of China (Grant Nos. 2007AA03Z402 and 2007AA03Z451). We acknowledge Yang Li in the University of Science and Technology Beijing for fruitful discussions.

国内

This work was supported by National Science Foundation of China (Grant Nos. 60776015 and 60976008), the Special Funds for Major State Basic Research Project (973 program) of China (Grant No. 2006CB604907), and the 863 High Technology R&D Program of China (Grant Nos. 2007AA03Z402 and 2007AA03Z451). We acknowledge Yang Li in the University of Science and Technology Beijing for fruitful discussions.