Control of normal shock wave / turbulent boundary-layer interaction using streamwise slots

The effect of streamwise slots on the interaction of a normal shock wave / turbulent boundary layer has been investigated experimentally at a Mach number of 1.3. The surface pressure distribution for the controlled interaction was found to be significantly smeared, featuring a distinct plateau. This was due to a change in shock structure from a typical unseparated normal shock wave boundary layer interaction to a large bifurcated Lambda type shock pattern. Boundary layer velocity measurements downstream of the slots revealed a strong spanwise variation of boundary layer properties whereas the modified shock structure was relatively twodimensional. Oil flow visualisation indicated that in the presence of slots the boundary layer surface flow was highly three dimensional and confirmed that the effect of slots was mainly due to suction and blowing similar to that for passive control with uniform surface ventilation. Three hole probe measurements confirmed that the boundary layer was three dimensional and that the slots introduced vortical motion into the flowfield. Results indicate that when applied to an aerofoil, the control device has the potential to reduce wave drag while incurring only small viscous penalties. The introduction of streamwise vorticity may also be beneficial to delay trailing edge separation and the device is thought to be capable of postponing buffet onset. © 2001 by A N Smith.

Excitation energy dependent raman signatures of ABA- and ABC-stacked few-layer graphene

The dependence of the Raman spectrum on the excitation energy has been investigated for ABA-and ABC- stacked few-layer graphene in order to establish the fingerprint of the stacking order and the number of layers, which affect the transport and optical properties of few-layer graphene. Five different excitation sources with energies of 1.96, 2.33, 2.41, 2.54 and 2.81â €...eV were used. The position and the line shape of the Raman 2D, G*, N, M, and other combination modes show dependence on the excitation energy as well as the stacking order and the thickness. One can unambiguously determine the stacking order and the thickness by comparing the 2D band spectra measured with 2 different excitation energies or by carefully comparing weaker combination Raman modes such as N, M, or LOLA modes. The criteria for unambiguous determination of the stacking order and the number of layers up to 5 layers are established.

Rapid hologram generation utilizing layer-based approach and graphic rendering for realistic three-dimensional image reconstruction by angular tiling

An approach of rapid hologram generation for the realistic three-dimensional (3-D) image reconstruction based on the angular tiling concept is proposed, using a new graphic rendering approach integrated with a previously developed layer-based method for hologram calculation. A 3-D object is simplified as layered cross-sectional images perpendicular to a chosen viewing direction, and our graphics rendering approach allows the incorporation of clear depth cues, occlusion, and shading in the generated holograms for angular tiling. The combination of these techniques together with parallel computing reduces the computation time of a single-view hologram for a 3-D image of extended graphics array resolution to 176 ms using a single consumer graphics processing unit card. © 2014 SPIE and IS and T.

The turbulent rotating-disk boundary layer

© 2014 Elsevier Masson SAS. All rights reserved. The turbulent boundary layer on a rotating disk is studied with the aim of giving a statistical description of the azimuthal velocity field and to compare it with the streamwise velocity of a turbulent two-dimensional flat-plate boundary layer. Determining the friction velocity accurately is particularly challenging and here this is done through direct measurement of the velocity distribution close to the rotating disk in the very thin viscous sublayer using hot-wire anemometry. Compared with other flow cases, the rotating-disk flow has the advantage that the highest relative velocity with respect to a stationary hot wire is at the wall itself, thereby limiting the effect of heat conduction to the wall from the hot-wire probe. Experimental results of mean, rms, skewness and flatness as well as spectral information are provided. Comparison with the two-dimensional boundary layer shows that turbulence statistics are similar in the inner region, although the rms-level is lower and the maximum spectral content is found at smaller wavelengths for the rotating case. These features both indicate that the outer flow structures are less influential in the inner region for the rotating case.

Passively modelocked VECSEL using a single-layer graphene saturable absorber mirror

Optically pumped ultrafast vertical external cavity surface emitting lasers (VECSELs), also referred to as semiconductor disk lasers (SDLs), are very attractive sources for ps- and fs-pulses in the near infrared [1]. So far VECSELs have been passively modelocked with semiconductor saturable absorber mirrors (SESAMs, [2]). Graphene has emerged as a promising saturable absorber (SA) for a variety of applications [3-5], since it offers an almost unlimited bandwidth and a fast recovery time [3-5]. A number of different laser types and gain materials have been modelocked with graphene SAs [3-4], including fiber [5] and solid-state bulk lasers [6-7]. Ultrafast VECSELs are based on a high-Q cavity, which requires very low-loss SAs compared to other lasers (e.g., fiber lasers). Here we develop a single-layer graphene saturable absorber mirror (GSAM) and use it to passively modelock a VECSEL. © 2013 IEEE.

Ultrafast non-thermal electron dynamics in single layer graphene

The impulsive optical excitation of carriers in graphene creates an out-of-equilibrium distribution, which thermalizes on an ultrafast timescale [1-4]. This hot Fermi-Dirac (FD) distribution subsequently cools via phonon emission within few hundreds of femtoseconds. While the relaxation mechanisms mediated by phonons have been extensively investigated, the initial stages, ruled by fundamental electron-electron (e-e) interactions still pose a challenge. © 2013 IEEE.

Carbon nanotube forests growth using catalysts from atomic layer deposition

We have grown carbon nanotubes using Fe and Ni catalyst films deposited by atomic layer deposition. Both metals lead to catalytically active nanoparticles for growing vertically aligned nanotube forests or carbon fibres, depending on the growth conditions and whether the substrate is alumina or silica. The resulting nanotubes have narrow diameter and wall number distributions that are as narrow as those grown from sputtered catalysts. The state of the catalyst is studied by in-situ and ex-situ X-ray photoemission spectroscopy. We demonstrate multi-directional nanotube growth on a porous alumina foam coated with Fe prepared by atomic layer deposition. This deposition technique can be useful for nanotube applications in microelectronics, filter technology, and energy storage. © 2014 AIP Publishing LLC.

Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer

We present the growth of GaN epilayer on Si (111) substrate with a single AlGaN interlayer sandwiched between the GaN epilayer and AlN buffer layer by using the metalorganic chemical vapour deposition. The influence of the AlN buffer layer thickness on structural properties of the GaN epilayer has been investigated by scanning electron microscopy, atomic force microscopy, optical microscopy and high-resolution x-ray diffraction. It is found that an AlN buffer layer with the appropriate thickness plays an important role in increasing compressive strain and improving crystal quality during the growth of AlGaN interlayer, which can introduce a more compressive strain into the subsequent grown GaN layer, and reduce the crack density and threading dislocation density in GaN film.

Mode Characteristics for Square Resonators With a Metal Confinement Layer

Microsquare resonators laterally confined by SiO2/Au/air multilayer structure are investigated by light ray method with reflection phase-shift of the multiple layers and two-dimensional (2-D) finite-difference time-domain (FDTD) technique. The reflectivity and phase shift of the mode light ray on the sides of the square resonator with the semiconductor/SiO2/Au/air multilayer structure are calculated for TE and TM modes by transfer matrix method. Based on the reflection phase shift and the reflectivity, the mode wavelength and factor are calculated by the resonant condition and the mirror loss, which are in agreement well with that obtained by the FDTD simulation. We find that the mode factor increases greatly with the increase of the SiO2 layer thickness, especially as d < 0.3 mu m. For the square resonator with side length 2 mu m and refractive index 3.2, anticrossing mode couplings are found for confined TE modes at wavelength about 1.6 mu m at d = 0.11 mu m, and confined TM modes at d = 0.71 mu m, respectively.

Impact of thickness of GaN buffer layer on properties of AlN/GaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition

We studied the impact of the thickness of GaN buffer layer on the properties of distributed Bragg reflector (DBR) grown by metalorganic chemical vapor deposition (MOCVD). The samples were characterized by using metallographic microscope, transmission electron microscope (TEM), atomic force microscopy (AFM), X-ray diffractometer (XRD) and spectrophotometer. The results show that the thickness of the GaN buffer layer can significantly affect the properties of the DBR structure and there is an optimal thickness of the GaN buffer layer. This work would be helpful for the growth of high quality DBR structures.

Cathodoluminescence study on in composition inhomogeneity of thick InGaN layer

We have investigated the optical properties of thick InGaN film grown on GaN by cathodeluminescence (CL) spectroscopy. It is found that there is obvious In composition variation in both growth and lateral direction of InGaN film. The depth distribution of In composition is closely related to the strain relaxation process of InGaN film. Accompanied with the relaxation of compressive strain, the In composition of InGaN layer increases and the CL peak energy shifts towards red. Moreover, a rather apparent In composition fluctuation is found in the relaxed upper part of InGaN layer as confirmed by CL imaging.