Cathodoluminescence study on in composition inhomogeneity of thick InGaN layer
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2010
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| Resumo |
We have investigated the optical properties of thick InGaN film grown on GaN by cathodeluminescence (CL) spectroscopy. It is found that there is obvious In composition variation in both growth and lateral direction of InGaN film. The depth distribution of In composition is closely related to the strain relaxation process of InGaN film. Accompanied with the relaxation of compressive strain, the In composition of InGaN layer increases and the CL peak energy shifts towards red. Moreover, a rather apparent In composition fluctuation is found in the relaxed upper part of InGaN layer as confirmed by CL imaging. Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-08-17T01:03:33Z No. of bitstreams: 1 Cathodoluminescence study on in composition inhomogeneity of thick InGaN layer.pdf: 671859 bytes, checksum: 6224979c84e5891675011fbc178e1039 (MD5) Approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-08-17T01:07:17Z (GMT) No. of bitstreams: 1 Cathodoluminescence study on in composition inhomogeneity of thick InGaN layer.pdf: 671859 bytes, checksum: 6224979c84e5891675011fbc178e1039 (MD5) Made available in DSpace on 2010-08-17T01:07:17Z (GMT). No. of bitstreams: 1 Cathodoluminescence study on in composition inhomogeneity of thick InGaN layer.pdf: 671859 bytes, checksum: 6224979c84e5891675011fbc178e1039 (MD5) Previous issue date: 2010 This work is supported by the National Natural Science Fund of China (Grant Nos. 60976045, 60506001, 60836003 and 60776047), National Basic Research Program (2007CB936700) and the National Science Foundation for Distinguished Young Scholars under Grant No. 60925017. The authors would like to thank the Beijing Synchrotron Radiation Facility (BSRF) for the assistance in thin film characterization. 国内 This work is supported by the National Natural Science Fund of China (Grant Nos. 60976045, 60506001, 60836003 and 60776047), National Basic Research Program (2007CB936700) and the National Science Foundation for Distinguished Young Scholars under Grant No. 60925017. The authors would like to thank the Beijing Synchrotron Radiation Facility (BSRF) for the assistance in thin film characterization. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Wang H (Wang H.), Jiang DS (Jiang D. S.), Jahn U (Jahn U.), Zhu JJ (Zhu J. J.), Zhao DG (Zhao D. G.), Liu ZS (Liu Z. S.), Zhang SM (Zhang S. M.), Yang H (Yang H.).Cathodoluminescence study on in composition inhomogeneity of thick InGaN layer.THIN SOLID FILMS,2010,518(17):5028-5031 |
| Palavras-Chave | #光电子学 #Gallium Nitride #Indium Gallium Nitride #Cathodeluminescence #X-ray Diffraction #Metal-Organic Chemical Vapor Deposition |
| Tipo |
期刊论文 |
