Laser irradiation cell photothermal therapy assisted by gold nanoparticles

The strong absorption of gold nanoparticles in the visible spectral range allows the localized generation of heat in a volume of only a few tens of nanometer. The efficient conversion of strongly absorbed light by plasmonic gold nanoparticles to heat energy and their easy bioconjugation suggest that the gold nanoparticles can be used as selective photothermal agents in molecular cell targeting. The selective destruction of alkaline phosphatase, the permeabilization of the cell membrane and the selective killing of cells by laser irradiating gold nanoparticles were demonstrated. The potential of using this selective technique in molecularly targeted photothermal therapy and transfection is discussed.

茂金属线性低密度聚乙烯的光氧化和热力学降解研究

聚乙烯是广泛应用的合成高分子材料之一，工业化己有几十年历史，为适应不断扩展的加工及应用的要求，氧化降解反应一直是较活跃的研究领域。目前为止，一些氧化降解的规律和机理已经确定，某些还在积极地研究探索之中。茂金属线性低密度聚乙烯（m-LLDPE）是进入九十年代以后才出现的采用新型茂金属催化剂催化合成的树脂，与传统 Ziegler-Natta线性低密度聚乙烯（LLDPE）相比，其具有分子量分布窄，共聚单体在主链中分布均匀的特点，决定了它具有比传统LLDPE更加优异的使用性能，因而在生产生活中得到广泛应用。目前对其氧化降解的研究较少，因此对m-LLDPE的氧化及稳定性的研究对指导其应用有着积极的意义。本论文选择催化剂和共聚单体类型不同的三种m-LLDPE和两种传统LLDPE对比研究了m-LLDPE的光氧化和热力学降解稳定性，而且研究了过渡金属化合物光敏化剂对它的热力学降解的影响，热力学降解和光敏化剂对m-LLDPE的光、热氧化稳定性的影响。化测试方法表征m-LLDPE的光氧俐反应，长时间光氧化后支化度和结晶度都有不同程度的上升，光氧化速率主要受亚乙烯基双链浓度的影响，受支化度的影响不明显。因此在合成m-LLDPE的过程中应该合理设计茂金属催化剂，降低聚合产品中亚乙烯基双键的浓度，提高它的光氧化稳定性。采用熔体流动速率、流变法和红外光谱法研究了m-LLDPE和传统LLDPE在密炼过程中的热力学降解反应，和光敏化剂对热力学降解反应的影响，利用氧化诱导温度法快速表征热力学降解对m-LLDPE和LLDPE的氧化稳定性的影响，并利用自然光曝晒测试碳基指数和力学性能的变化和热氧化观察脆化时间的方法研究了热力学降解对它们的光、热氧化稳定性的影响，为m-LLDPE在气候条件下应用提供理论依据。共聚单体类型相同的m-LLDPEI和m-LLDPEZ相比较，m-LLDPEI在热力学降解过程中生成更多的氧化产物，光敏化剂硬脂酸钻和乙酰基丙酮钻对m-LLDPEI热力学降解生成氧化产物的敏化作用更强，也更显著地降低了密炼后样品的氧化诱导温度。流变法不仅表征了m-LLDPEI热力学降解过程中的分子结构的变化，也反映了样品的热稳定性。共聚单体类型不同的m-LLDPE3和LLDPEZ相比较，热力学降解后熔体流动速率下降得多，但拨基指数上升较少，这是m-LLDPE3密炼过程中熔融粘度较高的原因。光敏化剂更强烈得增强了LLDPE2的热力学降解过程中氧化产物的形成。热力学降解明显的降低了 LLDPE2的光氧化稳定性而没有对m-LLDPE3的光氧化稳定性产生明显作用，同时敏化剂对LLDPE2的光氧化敏化作用也更强烈一些。本文还研究了光敏化剂硬脂酸钻和硬脂酸铁对三种共聚单体类型不同的传统LLDPE和LDPE的光敏化效果，发现光敏化剂对不同链结构的聚乙烯的光敏化效果存在很大的差异，光敏化作用的顺序为：乙烯一辛烯共聚LLDPE＜乙烯一丁烯共聚LLDPE＜LDPE，光敏化效果并不随敏化剂浓度的增大而增强。从红外光谱可以分析聚乙烯中亚乙烯基浓度越高，光照过程中形成的氢过氧化物浓度越高，光敏化剂的敏化效果越强。

Fabrication of Silicon-Based Template-Assisted Nanoelectrode Arrays and Ohmic Contact Properties Investigation

A convenient fabrication technology for large-area, highly-ordered nanoelectrode arrays on silicon substrate has been described here, using porous anodic alumina (PAA) as a template. The ultrathin PAA membranes were anodic oxidized utilizing a two-step anodization method, from Al film evaporated on substrate. The purposes for the use of two-step anodization were, first, improving the regularity of the porous structures, and second reducing the thickness of the membranes to 100 similar to 200 nm we desired. Then the nanoelectrode arrays were obtained by electroless depositing Ni-W alloy into the through pores of PAA membranes, making the alloy isolated by the insulating pore walls and contacting with the silicon substrates at the bottoms of pores. The Ni-W alloy was also electroless deposited at the back surface of silicon to form back electrode. Then ohmic contact properties between silicon and Ni-W alloy were investigated after rapid thermal annealing. Scanning electron microscopy (SEM) observations showed the structure characteristics, and the influence factors of fabrication effect were discussed. The current voltage (I-V) curves revealed the contact properties. After annealing in N-2 at 700 degrees C, good linear property was shown with contact resistance of 33 Omega, which confirmed ohmic contacts between silicon and electrodes. These results presented significant application potential of this technology in nanosize current-injection devices in optoelectronics, microelectronics and bio-medical fields.

LO-PHONON-ASSISTED TUNNELING IN ASYMMETRIC DOUBLE-WELL STRUCTURES WITH THICK BARRIERS

Nonresonant electron tunneling between asymmetric double quantum wells in AlxGa1-xAs/GaAs systems has been investigated by using steady-state and time-resolved photoluminescence spectra. Experimental evidence of LO-phonon-assisted tunneling through thick barriers has been obtained by enhancing excitation power densities or applying electric fields perpendicular to the well plane. LO-phonon-assisted tunneling times have also been estimated from the variation of the decay time of the narrow-well photoluminescence with applied electric fields. Our findings suggest that LO phonons in the barriers play an important role in the tunneling transfer.

Improvement of the stability of hydrogenated amorphous silicon films by intermittent illumination treatment at elevated temperature

The intermittent illumination treatment by white light at elevated temperature is proved to be a convenient and efficient method for the improvement of the stability of hydrogenated amorphous silicon (a-Si:H) films. The effect of the treatment on electrical properties, light-induced degradation, and gap states of undoped a-Si:H films has been investigated in detail. With the increase of cycling number, the dark- as well as photo-conductivities in annealed state and light-soaked state approach each other, presenting an unique irreversible effect. The stabilization and ordering processes by the present treatment can not be achieved merely by annealing under the same conditions. It is shown that the treatment proposed here results in a shift to higher values of the energy barriers between defects and their precursors, and hence an improved stability of a-Si:H films. (C) 1996 American Institute of Physics.

Electro-luminescence and photo-luminescence from strained SiGe/Si quantum well

Photo-luminescence and electro-luminescence from step-graded index SiGe/Si quantum well grown by molecular beam epitaxy is reported. The SiGe/Si step-graded index quantum well structure is beneficial to the enhancing of electro-luminescence. The optical and electrical properties of this structure are discussed.

Formation of Fe-N films containing Fe6N2 phase by ion beam assisted deposition

Fe-N films were deposited on Si(100) and GaAs(100) substrates at room temperature by ion beam assisted deposition under various N/ Fe atomic arrival ratio, 0.09, 0.12, 0.15. The results of X-ray diffraction indicated that the film deposited at 0.12 of N/Fe arrival ratio contained a considerable fraction of the Fe16N2 phase which had grown predominantly in the [001] orientation. For the larger N/Fe arrival ratio, a martensite phase with 15 at.% nitrogen was obtained. It was found that a lower deposition temperature (<200 degrees C) was necessary for the formation of the Fe16N2 phase.

Transient photocurrent investigation of photo-processes of lattice-matched MQW GaAs/AlxGa1-xAs electrode

Transient photocurrents induced by short light pulses at lattice-matched GaAs/AlxGa1-xAs multiple quantum well (MQW) electrodes were studied as a function of electrode potential. Dual exponential photocurrent decay transients were observed at various potentials. By analysis of the dual exponential decay transients, information on steady state photocurrents (I-s), surface collection of photoexcited minority carriers (G(0)) and lifetimes of surface states (T-s) was obtained. The kinetic behaviors of photoprocesses at illuminated MQW/electrolyte interface were discussed.

Morphology Evolution of (331)A High-Index Surfaces During Atomic Hydrogen Assisted Molecular Beam Epitaxy (MBE)

Step like morphology of (331)A high-index surfaces during atomic hydrogen assisted molecular beam epitaxy (MBE) growth has been investigated. Atomic Force Microscope (AFM) measurements show that in conventional MBE, the step heights and terrace widths of GaAs layers increase monotonically with increasing substrate temperatures. The terrace widths and step densities increase with increasing the GaAs layer thickness and then saturates. And, in atomic hydrogen assisted MBE, the terrace width reduces and density increases when depositing the same amount of GaAs. It attributes this to the reduced surface migration length of Ga adatoms with atomic hydrogen. Laterally ordered InAs self-aligned nano-wires were grown on GaAs (331)A surfaces and its optical polarization properties were revealed by photoluminescence measurements.