Electro-luminescence and photo-luminescence from strained SiGe/Si quantum well
| Data(s) |
1996
|
|---|---|
| Resumo |
Photo-luminescence and electro-luminescence from step-graded index SiGe/Si quantum well grown by molecular beam epitaxy is reported. The SiGe/Si step-graded index quantum well structure is beneficial to the enhancing of electro-luminescence. The optical and electrical properties of this structure are discussed. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Dong WF; Yang QQ; Li J; Wang QM; Chui QA; Zhou JM; Huang Q .Electro-luminescence and photo-luminescence from strained SiGe/Si quantum well ,ACTA PHYSICA SINICA-OVERSEAS EDITION,1996,5(6):456-462 |
| Palavras-Chave | #光电子学 #ELECTROLUMINESCENCE #ALLOY |
| Tipo |
期刊论文 |
