PHOTO-LUMINESCENCE STUDIES OF RESIDUAL IMPURITIES IN HIGH-PURITY LIQUID-PHASE EPITAXY GAAS-LAYERS


Autoria(s): CHEN TJ; SUN BK
Data(s)

1982

Identificador

http://ir.semi.ac.cn/handle/172111/14799

http://www.irgrid.ac.cn/handle/1471x/101434

Idioma(s)

英语

Fonte

CHEN TJ; SUN BK.PHOTO-LUMINESCENCE STUDIES OF RESIDUAL IMPURITIES IN HIGH-PURITY LIQUID-PHASE EPITAXY GAAS-LAYERS,CHINESE PHYSICS,1982,2(3):642-647

Palavras-Chave #半导体物理
Tipo

期刊论文