Influence of dual incorporation of In and N on the luminescence of GaInNAs/GaAs single quantum wells

The optical properties of above- and below-band-edge transitions have been investigated by incorporating In atoms into GaNAs/GaAs single quantum wells. The experimental results show that with increasing In concentration the interband luminescence is improved and the luminescence intensity below the band edge in GaInNAs/GaAs decreases significantly. An interpretation is given that N atoms are preferable to form a covalent bond with In than with Ga atoms in a GaInNAs alloy, due to the compensation of the atomic-size difference between In and N atoms on the GaAs substrate. The photoreflectance spectra of the GaInNAs/GaAs single quantum well support the assignment of an intrinsic mechanism to the high-energy luminescence peak. (C) 2000 American Institute of Physics. [S0003- 6951(00)01752-6].

Theoretical analysis and experimental study of Fourier transformation of Franz-Keldysh oscillations in GaAs

Fourier transformation (FT) has been used in the theoretical line shape analysis of Franz-Keldysh oscillations (FKOs) in detail by numerical simulations. FKOs from the surface-intrinsic-n(+) GaAs structure were obtained in photoreflectance (PR) measurements with various modulation light intensities and with different strengths of bias light illumination, which were used to change the static electric field in the intrinsic layer of the sample. The FT spectra of the PR spectra, including the real part, imaginary part, and the modulus, were very consistent with the theoretical line shapes. The ratio of the square root of the reduced mass (root mu (L)/root mu (H)) and the ratio of transition strength of the electron heavy hole to the electron light hole were obtained from the PT spectra. In addition, the electric field in the intrinsic layer of the sample without and with bias illumination and the modulation field induced by photomodulation were also obtained. (C) 2000 American Institute of Physics. [S0021-8979(00)02123-X].

Effect of rapid thermal annealing on GaInNAs/GaAs quantum wells grown by plasma-assisted molecular-beam epitaxy

We have studied the effect of rapid thermal annealing (RTA) on GaInNAs/GaAs quantum wells (QWs) grown by molecular-beam epitaxy using a dc plasma as the N source. It was found that RTA at low temperature (LT, 650 degrees C) and high temperature (HT, 900 degrees C) could both improve the QW quality significantly. To clarify the mechanism of quality improvement by RTA, a magnetic field perpendicular to the path of the N plasma flux was applied during the growth of the GaInNAs layers for the sake of comparison. It was found that LT-RTA mainly removed dislocations at interfaces related to the ion bombardment, whereas, HT-RTA further removed dislocations originating from the growth. LT-RTA caused only a slight blueshift of photoluminescence peak wavelength, probably due to defect-assisted interdiffusion of In-Ga at the QW interfaces. The blueshift caused by HT-RTA, on the other hand, was much larger. It is suggested that this is due to the fast defect-assisted diffusion of N-As at the QW interfaces. As defects are removed by annealing, the diffusion of In-Ga at interfaces would be predominant. (C) 2000 American Institute of Physics. [S0003- 6951(00)01535-7].

Kinetic modeling of N incorporation in GaInNAs growth by plasma-assisted molecular-beam epitaxy

We have studied the growth of GaInNAs by a plasma-assisted molecular-beam epitaxy (MBE). It was found that the N-radicals were incorporated into the epitaxial layer like dopant atoms. In the range of 400-500 degrees C, the growth temperature (T-g) mainly affected the crystal quality of GaInNAs rather than the N concentration. The N concentration dropped rapidly when T-g exceeded 500 degrees C. Considering N desorption alone is insufficient to account for the strong falloff of the N concentration with T-g over 500 degrees C, the effect of thermally-activated N surface segregation must be taken into account. The N concentration was independent of the arsenic pressure and the In concentration in GaInNAs layers, but inversely proportional to the growth rate. Based on the experimental results, a kinetic model including N desorption and surface segregation was developed to analyze quantitatively the N incorporation in MBE growth. (C) 2000 American Institute of Physics. [S0003-6951(00)00928-1].

Tuning of conduction intersublevel absorption wavelengths in (In, Ga)As/GaAs quantum-dot nanostructures

We demonstrate that by increasing the amount of (In, Ga)As deposit in a quantum dot layer, the intersublevel absorption wavelength for (In, Ga)As/GaAs quantum-dot infrared photodetectors can be blue-shifted from 15 to 10 mu m while the photoluminescence peak is red-shifted. We directly compare the measured energy spacing between intersublevels obtained from infrared absorption spectroscopy with those obtained from photoluminescence spectroscopy. We find that the intersublevel energy spacing determined from absorption measurements is much larger than that obtained from the photoluminescence measurements. (C) 2000 American Institute of Physics. [S0003-6951(00)04524-1].

Interband luminescence and absorption of GaNAs/GaAs single-quantum-well structures

We have investigated the interband electron transitions in a GaNAs/GaAs single quantum well (QW) by photoluminescence and absorption spectra. The experimental results show that the dominant photoluminescence at low temperature and high excitation intensity originates from transitions within the GaNAs layer. The interband transition energy for QWs with different well widths can be well fitted if a type-II band line up of GaNAs/GaAs QWs is assumed. (C) 2000 American Institute of Physics. [S0003-6951(00)03220-4].

Effects of rapid thermal annealing on the optical properties of GaNxAs1-x/GaAs single quantum well structure grown by molecular beam epitaxy

The effect of rapid thermal annealing (RTA) on the optical properties of GaNxAs1-x/GaAs strained single quantum well (SQW) was studied by low-temperature photoluminescence (PL). The GaNxAs1-x/GaAs SQW structures were prepared by dc active nitrogen plasma assisted molecular beam epitaxy. PL measurements on a series of samples with different well widths and nitrogen compositions were used to evaluate the effects of RTA. The annealing temperature and time were varied from 650 to 850 degrees C and 30 s to 15 min, respectively. Remarkable improvements of the optical properties of the samples were observed after RTA under optimum conditions. The interdiffusion constants have been calculated by taking into account error function diffusion and solving the Schrodinger equation. The estimated interdiffusion constants D are 10(-17)-10(-16) cm(2)/s for the earlier annealing conditions. Activation energies of 6-7 eV are obtained by fitting the temperature dependence of the interdiffusion constants. (C) 2000 American Institute of Physics. [S0021-8979(00)10401-3].

A comparison of photoluminescence properties of InGaAs GaAs quantum dots with a single quantum well

Variable temperature photoluminescence (PL) measurements for In0.3Ga0.7As(6 nm)/GaAs(34 nm) quantum dot superlattices with a period of 20 and an In0.3Ga0.7As(6 nm)/GaAs(34 nm) reference single quantum well have been conducted. It is found that the temperature dependence is different between the quantum dots and the reference single quantum well. The PL peak energy of the single quantum well decreases faster than that of the quantum dots with increasing temperature. The PL peak energy for the InGaAs/GaAs quantum dots closely follows the InAs band gap in the temperature range from 11 to 170 K, while the PL peak energy for the InGaAs/GaAs quantum well closely follows the GaAs band gap. In comparison with InAs/GaAs quantum dots, the InGaAs/GaAs quantum dots are more typical as a zero-dimensional system since the unusual PL results, which appear in the former, are not obvious for the latter. (C) 1999 American Institute of Physics. [S0021-8979(99)08615-6].

Investigation of periodicity fluctuations in strained (GaNAs)(1)(GaAs)(m) superlattices by the kinematical simulation of x-ray diffraction

Periodicity fluctuations of layer thickness and composition in a superlattice not only decrease the intensity, they also broaden the width of the satellite peaks in the x-ray diffraction pattern. In this letter, we develop a method that is dependent on the width of satellite peaks to assess periodicity fluctuations of a superlattice quickly. A linear relation of the magnitude of fluctuations, peak width and peak order has been derived from x-ray diffraction kinematical theory. By means of this method, periodicity fluctuations in strained (GaNAs)(1)(GaAs)(m) superlattices grown on GaAs substrates by molecular beam epitaxy have been studied. Distinct satellite peaks indicate that the superlattices are of high quality. The N composition of 0.25 and its fluctuation of 20% in a strained GaNxAs1-x monolayer are obtained from simulations of the measured diffraction pattern. The x-ray simulations and in situ observation results of reflection high-energy electron diffraction are in good agreement. (C) 1999 American Institute of Physics. [S0003-6951(99)00828-1].

Intraband absorption in the 8-12 mu m band from Si-doped vertically aligned InGaAs/GaAs quantum-dot superlattice

Normal-incident infrared absorption in the 8-12-mu m-atmospheric spectral window in the InGaAs/GaAs quantum-dot superlattice is observed. Using cross-sectional transmission electron microscopy, we find that the InGaAs quantum dots are perfectly vertically aligned in the growth direction (100). Under the normal incident radiation, a distinct absorption peaked at 9.9 mu m is observed. This work indicates the potential of this quantum-dot superlattice structure for use as normal-incident infrared imaging focal arrays application without fabricating grating structures. (C) 1998 American Institute of Physics. [S0003-6951(98)01151-6].

Normal-incidence intersubband (In, Ga)As/GaAs quantum dot infrared photodetectors

We report the device performance of normal-incidence (In, Ga)As/GaAs quantum dot intersubband infrared photodetectors. A primary intersubband transition peak is observed at the wavelength of 13 mu m (E-0 --> E-1) and a secondary peak at 11 mu m (E-0 --> E-2). The measured energy spacing in the conduction band of the quantum dots is in good agreement with low temperature photoluminescence measurement and calculations. A peak detectivity of 1 x 10(10) cm Hz(1/2)/W at 13 mu m was achieved at 40 K for these devices. (C) 1998 American Institute of Physics. [S0003-6951(98)01440-5].

Crystallographic and magnetic properties of nitride R3Fe29-xCrxN4 (R = Y, Ca, Nd, Sm, Gd, Tb, and Dy)

A systematic investigation of crystallographic and magnetic properties of nitride R3Fe29-xCrxN4 (R=Y, Ce, Nd, Sm, Gd, Tb, and Dy) has been performed. The lattice constants and unit cell volume decrease with increasing rare earth atomic number from Nd to Dy, reflecting the lanthanide contraction. After nitrogenation the relative volume expansion of each nitride is around between 5% and 7%. The nitrogenation results in a good improvement in the Curie temperature, the saturation magnetization and anisotropy fields at 4.2 K, and room temperature for R3Fe29-xCrxN4. Magnetohistory effects of R3Fe29-xCrxN4 and R3Fe29-xCrx (R=Nd and Sm) are observed in a low field of 0.04 T. First order magnetization process occurs in Sm3Fe24.0Cr5.0N4 in magnetic fields of 2.8 T at 4.2 K. After nitrogenation, the easy magnetization direction of Sm3Fe24.0Cr5.0 is changed from the easy-cone structure to the uniaxial. The good intrinsic magnetic properties of Sm3Fe24.0Cr5.0N4 make this compound a hopeful candidate for new high-performance hard magnets. (C) 1998 American Institute of Physics.

[PMMA-b-PAN］-Fe络合物制备有机一无机杂化薄膜

本论文通过聚甲基丙烯酸甲酯-b-聚丙烯睛嵌段共聚物同铁（III）离子络合物（［PMMA-b-PAN］-Fe）制备有机一无机杂化薄膜，并利用妨M对薄膜的表面形态进行了表征。结果表明，通过控制［PMMA-b-PAN］-Fe络合物溶液热处理时间（T=120℃）及络合物溶液中精基同铁＜III）离子的摩尔比率，可以得到不同表面形态的有机一无机杂化薄膜。并借助抑S对［PMMA-b-PAN〕-Fe络合物配位作用进行了研究，发现铁（III）离子与PMMA-b-PAN嵌段共聚物中的睛基配位。此外，对掺杂有FeSO4·7H2O 的均聚甲基丙烯酸甲酷（PMMA）溶液、均聚丙烯睛(PAN)溶液和FeSO4·7H2O（溶解在DMF中）溶液经不同时间热处理（T=120℃）后的薄膜表面形态进行了研究，结果发现，掺杂有FeSO4·7H2O 的PMMA 溶液经20in热处理后，薄膜的表面形态与FeS04·7H2O。溶液经20in热处理后薄膜的表面形态基本相同，而掺杂有FesO4·7H2O的PAN溶液经不同时间热处理后，薄膜的表面形态没有明显的变化。与此同时，对匡[PMMA-b-PAN]-Fe络合物高温热解制备碳材料进行了初步的研究，研究结果表明，利用PMMA-b-PAN］-e杂化薄膜炭化制备具有纳米尺寸孔洞的碳薄膜是可能的，但控制好热解条件至关重要。

PAN－聚氨酯泡沫分离富集ICP－AES测定水及化学试剂中痕量元素的研究

高频感耦等离子体发射光谱法（ICP－AES）具有测量精度好、线性范围宽、多元素同时测定等优点。经过20年来的发展已广泛应用于环境、地质、高纯材料等样品的分析中，成为分析实验室常备的分析手段之一。尽管ICP－AES在过去的20年中有很大的发展，但是依然存在着某些不足，例如：基体元素产生光谱干扰以及某些元素的含量低于检测限，使得ICP－AES对天然水等样品的直接分析上存在着一定的困难。为此，人们往往采取化学分离和富集的手段，从而使化学分离富集ICP－AES分析技术得以不断发展。在化学分离富集方法中，离子变换和吸附分离是一种较受欢迎的方法，其中所使用过的吸附剂有阴、阳离子交换树脂、螯合树脂以及螯合剂负载型吸附剂。螯合剂负载型吸附剂是一种将螯合剂以离子交换及物理吸附的方式固定在某些载体之上而成的新型吸附剂，近年来已引起人们的关注。PAN－聚氨酯泡沫是负载型吸附剂之一，它具有原料易得、制备简单、分离速度快、操作简便等特点。虽然，已有人做过研究，然而，目前的方法只限于单一或少数几个元素的富集分离，此外，与ICP－AES相结合的工作尚无人研究。本文在系统地研究了PAN－聚氨酯泡沫性质的基础上，建立了PAN－聚氨酯泡沫分离富集ICP－AES分析方法，并用此方法测定了天然水及化学试剂中的痕量元素，获得满意结果。本文首先研究比较了PAN－硅胶、PAN－GDX－401、PAN－聚四氟乙烯、PAN－聚氨酯泡沫的吸附性能。发现PAN－聚氨酯泡沫较适合ICP－AES多元素同时测定的特点，并且，操作简单，分离迅速。因此，我们对PAN－聚氨酯泡沫体系进行了深入的考察。我们研究了pH＝2－9.5范围内PAN－聚氨酯泡沫对Cu、En、Cd等17种离子的吸附特征，确定了同时富集Cu、En、Cd、Mn、Fe、Co、Pb长种离子的pH值为7.4-8.5。在吸附离子的解脱方式上，我们研究了1－4M HCl, 1-4M HCl-丙酮混合液以及消解泡沫三种解脱方式，结果发现，采用5ml 4 M HCl 可同时解脱Cu、En、Cd、Mn、Pb五种离子。采用5ml 4 HCl－丙酮混合液可同时解脱Cu、En、Cd、Mn、Fe、Co、Pb七种离子，解脱液经消解，转入无机介质后便可进样测定。实验发现，聚氨酯泡沫较易消解，因此，消解泡沫的方法也是一种实用的解脱方式。本文研究了样品体积在250－1000ml内变化时，各金属离子的回收率变化。发现此体积变化范围内，Cu、En、Cd、Mn、Pb、Fe、Co七种离子的回收率在90％以上。我们研究了试液流速对上述离子吸附性能的影响，确立了定量富集上述元素的流速为2－10ml/min。在基体元素干扰的研究中，我们对k、Na、Ca、Mg四种基体元素分别进行了考察，结果表明，k的含量为3％时，Mn的回收率低于90％，Na为3％时，Fe、Co、En回收率低于90％，Ca为0.1％时，Co、Fe、Mn回收率低于90％，Mg为0.5%时，Co、Mn、En回收率低于90％。本文还研究了PAN在聚氨酯泡沫上的动态吸附和洗脱特征，结果表明，PAN在聚氨酯泡沫上的动态饱和吸附量为60mg/g。同时，确立了PAN的动态负载方式为，以20ml 0.5% PAN-丙酮液通过泡沫柱床，经水洗后用于富集分离。实验发现，5ml 4 M HCl通过PAN－聚氨酯泡沫柱床后，流出液中PAN浓度为200Mg/ml左右。为此，我们研究了微量PAN进样时，对ICP－AES测定的影响，结果表明，进样介质中50－400Mg/ml的PAN对仪器的测定不产生影响。在化学条件研究之后，我们对仪器的工作参数进行了选择，确定了5％HG进样的工作条件为：正向功率1.3kw，载光流量为0.8 L/min，观察高度为16.5mn。最后，我们确立了PAN－聚氨酯泡沫的最佳分离条件，建立了PAN－聚氨酯泡沫分离富集ICP－AES分析方法，并用此方法分析了长春净月潭水样及优级纯NaCl中痕量元素。变异系数和标加回收实验表明，结果令人满意。

Self-formed InGaAs/GaAs quantum dot superlattice and direct observation on strain distribution in the capped superlattice

We have demonstrated a 20 period dislocation-free InGaAs/GaAs quantum dot superlattice which is self-formed by the strain from the superlattice taken as a whole rather than by the strain from the strained single layer. The island formation does not take place while growing the corresponding strained single layer. From the variation of the average dot height in each layer, the strain distribution and relaxation process in the capped superlattice have been examined. It is found that the strain is not uniformly distributed and the greatest strains occur at two interfaces between the superlattice and the substrate and the cap layer in the capped superlattice. (C) 1997 American Institute of Physics.