Interband luminescence and absorption of GaNAs/GaAs single-quantum-well structures
Data(s) |
2000
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Resumo |
We have investigated the interband electron transitions in a GaNAs/GaAs single quantum well (QW) by photoluminescence and absorption spectra. The experimental results show that the dominant photoluminescence at low temperature and high excitation intensity originates from transitions within the GaNAs layer. The interband transition energy for QWs with different well widths can be well fitted if a type-II band line up of GaNAs/GaAs QWs is assumed. (C) 2000 American Institute of Physics. [S0003-6951(00)03220-4]. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Sun BQ; Jiang DS; Luo XD; Xu ZY; Pan Z; Li LH; Wu RH .Interband luminescence and absorption of GaNAs/GaAs single-quantum-well structures ,APPLIED PHYSICS LETTERS,2000,76(20):2862-2864 |
Palavras-Chave | #半导体物理 #ALLOYS #GAASN #NITROGEN #PHOTOLUMINESCENCE #LOCALIZATION #SPECTROSCOPY |
Tipo |
期刊论文 |