Distribution of phytoplankton in the Three-Gorge Reservoir during rainy and dry seasons

After damming of the Yangtze River, in order to explore the impacts of the Three-Gorge Dam (TGD) on the aquatic ecosystem, phytoplankton composition, abundance and biomass spatial distribution were studied in the Three-Gorge Reservoir (TGR), and the closest upstream anabranch Xiangxi River, which is 38 kin away from the Three-Gorge Dam (TGD) during August (rainy season) 2004 and April (dry season) 2005. In surveys, 6 transects (2 downstream and 4 cross-stream) and 25 stations have been investigated and 314 samples were collected from the surface to the river bed with water samplers. In TGR, 63 taxa and 60 taxa were identified in the rainy and dry seasons, respectively. In the Xiangxi River, 39 taxa were observed in the rainy and dry seasons. Algal blooms occurred in the Xiangxi River and at the influx region of the Yangtze and Xiangxi in both seasons, but had not occurred prior to damming. In the rainy season, the dominant species was Chroomonas acuta with 1.84 x 10(7) cells l(-1), and in the dry season the dominant species were Asterionella formosa and Cryptomonas ovata with 1.34 x 10(7) cells l(-1) and 1.79 x 10(6) cells(.)l(-1), respectively. In the main channel of TGR, there were no significant correlations between phytoplankton abundance and the concentrations of the main soluble nutrients. In the Xiangxi River, significant negative correlations were observed between phytoplankton abundance and nitrate (Spearman, p < 0.01, n=21), phosphate (Spearman, p < 0.05, n=21) and silicate (Spearman, p < 0.01, n=21) in the rainy season, and similar correlations were also observed with nitrate (Spearman, p < 0.05, n=28) and silicate (Speannan, p < 0.01, n=28), but not with phosphate in the dry season. Since the damming of the Yangtze River, eutrophication in the anabranch within the backwater has occurred and become severe, and the frequency of algal bloom within TGR and anabranches is expected to increase. (c) 2006 Elsevier B.V. All rights reserved.

Electronic structure of a hydrogenic acceptor impurity in semiconductor nano-structures

The electronic structure and binding energy of a hydrogenic acceptor impurity in 2, 1, and 0-dimensional semiconductor nano-structures (i.e. quantum well (QW), quantum well wire (QWW), and quantum dot (QD)) are studied in the framework of effective-mass envelope-function theory. The results show that (1) the energy levels monotonically decrease as the quantum confinement sizes increase; (2) the impurity energy levels decrease more slowly for QWWs and QDs as their sizes increase than for QWs; (3) the changes of the acceptor binding energies are very complex as the quantum confinement size increases; (4) the binding energies monotonically decrease as the acceptor moves away from the nano-structures' center; (5) as the symmetry decreases, the degeneracy is lifted, and the first binding energy level in the QD splits into two branches. Our calculated results are useful for the application of semiconductor nano-structures in electronic and photoelectric devices.

Well-width dependence of in-plane optical anisotropy in (001) GaAs/AlGaAs quantum wells induced by in-plane uniaxial strain and interface asymmetry

The well-width dependence of in-plane optical anisotropy (IPOA) in (001) GaAs/AlxGa1-xAs quantum wells induced by in-plane uniaxial strain and interface asymmetry has been studied comprehensively. Theoretical calculations show that the IPOA induced by in-plane uniaxial strain and interface asymmetry exhibits much different well-width dependence. The strain-induced IPOA is inversely proportional to the energy spacing between heavy- and light-hole subbands, so it increases with the well width. However, the interface-related IPOA is mainly determined by the probability that the heavy- and light-holes appear at the interfaces, so it decreases with the well width. Reflectance difference spectroscopy has been carried out to measure the IPOA of (001) GaAs/AlxGa1-xAs quantum wells with different well widths. Strain- and interface-induced IPOA have been distinguished by using a stress apparatus, and good agreement with the theoretical prediction is obtained. The anisotropic interface potential parameters are also determined. In addition, the energy shift between the interface- and strain-induced 1H1E reflectance difference (RD) structures, and the deviation of the 1L1E RD signal away from the prediction of the calculation model have been discussed.

QE and Suns-V-oc study on the epitaxial CSiTF solar cells

In order to clarify the major factors having confined the efficiencies of as-prepared crystalline silicon thin film (CSiTF) solar cells on the SSP (silicon sheets from powder) ribbons, QE (quantum efficiency) and Suns-V-oc study were performed on the epitaxial CSiTF solar cells fabricated on the SSP ribbons, the SSP ribbons after surface being zone melting recrystallized (ZMR) and single crystalline silicon (sc-Si) substrates. The results show that the epi-layers deposited on the SSP ribbons have rough surfaces, which not only increases the diffusion reflectance on the surfaces but also makes the anti-reflection coatings become structure-loosened, both of which would deteriorate the light trapping effect; in addition, the epi-layers deposited on the SSP ribbons possess poor crystallographic quality, so the heavy grain boundary (GB) recombination limits the diffusion length of the minority carriers in the epi-layers, which makes the as-prepared CSiTF solar cells suffer the worse spectra response at long-wavelength range. Nearly all the dark characteristic parameters of the CSiTF solar cells are far away from the ideal values. The performances of the CSiTF solar cells are especially affected by too high I-02 (the dark saturation current of space charge region) values and too low R-sh (parallel resistance) values. The higher 102 values are mainly caused by the heavy GB recombination resulting from the poor crystallographic qualities of the silicon active layers in the space charge regions, while the lower R-sh values are attributed to the electrical leakage at the un-passivated PN junction or solar cell edges after the solar cells are cut by the laser scriber.

Depth dependence of structural quality in InN grown by metalorganic chemical vapor deposition

Rutherford backscattering and channeling is combined with X-ray diffraction to study the depth dependence of crystalline quality in InN layers grown by metalorganic chemical vapor deposition on sapphire substrate. The poorest crystalline quality in InN layer is produced at the intermediate region over 100 nm away from the InN/sapphire interface. With increasing layer thickness the crystalline quality improves to a certain degree dependent on the growth temperature. The InN sample grown at 450 degrees C is found to be more homogeneous than the sample grown at 550 degrees C. The difference in the defect profile is explained by the temperature-dependent growth modes. The inhomogeneity of structural quality and related properties such as carrier concentration and strain field is possibly the reason to observe a high energy wing in PL spectrum of the InN sample grown at 550 degrees C. (c) 2006 Elsevier B.V All rights reserved.

Finite element analysis of stress and strain distributions in InAs/GaAs quantum dots

In this paper, we perform systematic calculations of the stress and strain distributions in InAs/GaAs truncated pyramidal quantum dots (QDs) with different wetting layer (WL) thickness, using the finite element method (FEM). The stresses and strains are concentrated at the boundaries of the WL and QDs, are reduced gradually from the boundaries to the interior, and tend to a uniform state for the positions away from the boundaries. The maximal strain energy density occurs at the vicinity of the interface between the WL and the substrate. The stresses, strains and released strain energy are reduced gradually with increasing WL thickness. The above results show that a critical WL thickness may exist, and the stress and strain distributions can make the growth of QDs a growth of strained three-dimensional island when the WL thickness is above the critical value, and FEM can be applied to investigate such nanosystems, QDs, and the relevant results are supported by the experiments.

Elastic deformation of wafer surfaces in bonding

A model has been proposed for describing elastic deformation of wafer surfaces in bonding. The change of the surface shape is studied on the basis of the distribution of the periodic strain field. With the condition of diminishing periodic strain away from the interface, Airy stress function has been found that satisfies the elastic mechanical equilibrium. The result reveals that the wavy interface elastically deforms a spatial wavelength from the interface. (C) 2000 American Institute of Physics. [S0021-8979(00)04219-5].

Thermoelectric Cooling and Power Generation

In a typical thermoelectric device, a junction is formed from two different conducting materials, one containing positive charge carriers (holes) and the other negative charge carriers (electrons). When an electric current is passed in the appropriate direction through the junction, both types of charge carriers move away from the junction and convey heat away, thus cooling the junction. Similarly, a heat source at the junction causes carriers to flow away from the junction, making an electrical generator. Such devices have the advantage of containing no moving parts, but low efficiencies have limited their use to specialty applications, such as cooling laser diodes. The principles of thermoelectric devices are reviewed and strategies for increasing the efficiency of novel materials are explored. Improved materials would not only help to cool advanced electronics but could also provide energy benefits in refrigeration and when using waste heat to generate electrical power.

construction of feature-matching perception in virtual assembly

An important characteristic of virtual assembly is interaction. Traditional di-rect manipulation in virtual assembly relies on dynamic collision detection, which is very time-consuming and even impossible in desktop virtual assembly environment. Feature-matching isa critical process in harmonious virtual assembly, and is the premise of assembly constraint sens-ing. This paper puts forward an active object-based feature-matching perception mechanism and afeature-matching interactive computing process, both of which make the direct manipulation in vir-tual assembly break away from collision detection. They also help to enhance virtual environmentunderstandability of user intention and promote interaction performance. Experimental resultsshow that this perception mechanism can ensure that users achieve real-time direct manipulationin desktop virtual environment.

用分子动力学模拟甲烷水合物热激法分解

用分子动力学模拟方法研究甲烷水合物热激法分解，系统地研究注入340 K液态水的结构Ⅰ型甲烷水合物的分解机理.模拟显示水合物表层水分子与高温液态水分子接触获得热能，分子运动激烈，摆脱水分子间的氢键束缚，笼状结构被破坏.甲烷分子获得热能从笼中挣脱，向外体系扩散.热能通过分子碰撞从外层传递给内层水分子，水合物逐层分解.对比注入277K液态水体系模拟结果，得出热激法促进水合物分解.

The Kiloparsec-scale structure of 3C 286

We present radio images of the compact steep spectrum (CSS) quasar 3C 286 acquired with the Very Large Array (VLA) at 8.4 and 22.5 GHz. The source exhibits a two-sided core-jet structure with a bright central component and two extended components one to the east (P.A. 100degrees) and another to the southwest (P.A. -116degrees). From the compact core, an extension runs towards the southwest component up to similar to 0.7 arcsecond. The emission between the primary central component and the southwest component exhibits a knotty structure. A gradual change of the jet position angles from -135degrees to -120degrees in the inner southwest jet suggests a local bend. The position angle changes of the major eastern components E2 and E1 suggest that the eastern jet likely follows a curved trace. The bends in the jet trace may be associated with a relativistic precession or some interaction between the jet and the ambient matter. A mean spectral index of alpha(8.4)(22.5) similar to -0.76 (S-nu proportional to nu(alpha)) is estimated for the core component. Steep spectra are also obtained for the extended southwest component (2.6", P.A. -116degrees) and eastern component (0.8", P.A. 100degrees), with alpha(8.4)(22.5) similar to -0.88 and alpha(8.4)(22.5) similar to -1.79, respectively. The radio morphologies and spectral index distributions suggest that the core seen in our images is likely to be the beamed inner jet while the real nucleus is dimmed by it beaming away from us.

CALCULATION OF SPIN-REORIENTATION TEMPERATURE IN ND2FE14B

The spin-reorientation phenomenon in Nd2Fe14B has been investigated using an angular dependent free energy approach. A magnetic Hamiltonian which includes the crystal electric field term and the exchange term has been established using realistic band structure results. The temperature dependence of the molecular field is accounted for by introducing the Brillouin function and the magnetic Hamiltonian is diagonalized within the ground state multiplet of the Nd ion. The eigenstates are then used to form the partition function for the free energy. At each temperature, the direction of the molecular field is obtained by searching for the minimum in the angular parameter space of the free energy. Our calculations show that for Nd2Fe14B, the net magnetic anisotropy direction is canted away from the c axis at a temperature close to the experimentally reported spin-reorientation temperature of 150 K. The temperature dependence of the magnetic structure is found to be very sensitive to the size of the second order crystal field parameter B20.

Ab initio calculations for the neutral and charged O vacancy in sapphire

The energetics, lattice relaxation, and the defect-induced states of st single O vacancy in alpha-Al2O3 are studied by means of supercell total-energy calculations using a first-principles method based on density-functional theory. The supercell model with 120 atoms in a hexagonal lattice is sufficiently large to give realistic results for an isolated single vacancy (square). Self-consistent calculations are performed for each assumed configuration of lattice relaxation involving the nearest-neighbor Al atoms and the next-nearest-neighbor O atoms of the vacancy site. Total-energy data thus accumulated are used to construct an energy hypersurface. A theoretical zero-temperature vacancy formation energy of 5.83 eV is obtained. Our results show a large relaxation of Al (O) atoms away from the vacancy site by about 16% (8%) of the original Al-square (O-square) distances. The relaxation of the neighboring Al atoms has a much weaker energy dependence than the O atoms. The O vacancy introduces a deep and doubly occupied defect level, or an F center in the gap, and three unoccupied defect levels near the conduction band edge, the positions of the latter are sensitive to the degree of relaxation. The defect state wave functions are found to be not so localized, but extend up to the boundary of the supercell. Defect-induced levels are also found in the valence-band region below the O 2s and the O 2p bands. Also investigated is the case of a singly occupied defect level (an F+ center). This is done by reducing both the total number of electrons in the supercell and the background positive charge by one electron in the self-consistent electronic structure calculations. The optical transitions between the occupied and excited states of the: F and F+ centers are also investigated and found to be anisotropic in agreement with optical data.

A model of dislocations at the interface of the bonded wafers

Wafer bonding is regardless of lattice mismatch in the integration of dissimilar semiconductor materials. This technology differs from the heteroepitaxy mainly in the mechanism of generating dislocations at the interface. A model of dislocations at the bonded interface is proposed in this paper. Edge-like dislocations, which most efficiently relax the strain, are predominant at the bonded interface. But the thermal stress associated with large thermal expansion misfit may drive dislocations away from the bonded interface upon cooling.

Ignition of single coal particle in a hot furnace under normal- and micro-gravity condition

An experimental study on ignition and combustion of single particles was conducted at normal gravity (1-g) and microgravity (l-g) for three high volatile coals with initial diameter of 1.5 and 2.0 mm, respectively. The non-intrusive twin-color pyrometry method was used to retrieve the surface temperature of the coal particle through processing the images taken by a color CCD camera. At the same time, a mathematical model considering thermal conduction inside the coal particle was developed to simulate the ignition process. Both experiments and modeling found that ignition occurred homogeneously at the beginning and then heterogeneously for the testing coal particles burning at l-g. Experimental results confirmed that ignition temperature decreased with increasing volatile content and increasing particle size. However, contradicted to previous studies, this study found that for a given coal with certain particle size, ignition temperature was about 50–80 K lower at l-g than that at 1-g. The model predictions agreed well with the l-g experimental data on ignition temperature. The criterion that the temperature gradient in the space away from the particle surface equaled to zero was validated to determine the commence of homogeneous ignition. Thermal conduction inside the particle could have a noticeable effect for determining the ignition temperature. With the consideration of thermal conduction, the critical size for the phase transient from homogeneous to heterogeneous is about 700 lm at ambient temperature 1500 K and oxygen concentration 0.23. 2009 The Combustion Institute. Published by Elsevier Inc. All rights reserved.