18 Gchips/s electronically-processed OCDMA spread spectrum for access networks

We demonstrate for the first time coding/decoding for OCDMA networks using electronic transversal filters at 18Gchips/s-a ten-fold improvement over previous demonstrations. The chip rate allows users at Gb/s rates in access applications. © 2007 Optical Society of America.

Graphene modelocked VECSELs

In the past decade, passively modelocked optically pumped vertical external cavity surface emitting lasers (OPVECSELs), sometimes referred to as semiconductor disk lasers (OP-SDLs), impressively demonstrated the potential for generating femtosecond pulses at multi-Watt average output powers with gigahertz repetition rates. Passive modelocking with a semiconductor saturable absorber mirror (SESAM) is well established and offers many advantages such as a flexible design of the parameters and low non-saturable losses. Recently, graphene has emerged as an attractive wavelength-independent alternative saturable absorber for passive modelocking in various lasers such as fiber or solid-state bulk lasers because of its unique optical properties. Here, we present and discuss the modelocked VECSELs using graphene saturable absorbers. The broadband absorption due to the linear dispersion of the Dirac electrons in graphene makes this absorber interesting for wavelength tunable ultrafast VECSELs. Such widely tunable modelocked sources are in particularly interesting for bio-medical imaging applications. We present a straightforward approach to design the optical properties of single layer graphene saturable absorber mirrors (GSAMs) suitable for passive modelocking of VECSELs. We demonstrate sub-500 fs pulses from a GSAM modelocked VECSEL. The potential for broadband wavelength tuning is confirmed by covering 46 nm in modelocked operation using three different VECSEL chips and up to 21 nm tuning in pulsed operation is achieved with one single gain chip. A linear and nonlinear optical characterization of different GSAMs with different absorption properties is discussed and can be compared to SESAMs. © 2014 SPIE.

Multiplex detection of mutations in clinical isolates of rifampin-resistant Mycobacterium tuberculosis by short oligonucleotide Ligation assay on DNA chips

A new approach, short-oligonucleotide-ligation assay on DNA chip (SOLAC), is developed to detect mutations in rifampin-resistant Mycobacterium tuberculosis. The method needs only four common probes to detect 15 mutational variants of the rpoB gene within 12 h. Fifty-five rifampin-resistant M. tuberculosis isolates were analyzed, resulting in 87.3% accuracy and 83.6% concordance relative to DNA sequencing.

Fabrication and Characterization of High Power InGaN Blue-Violet Lasers with an Array Structure

InGaN/GaN multi-quantum-well-structure laser diodes with an array structure are successfully fabricated on sapphire substrates. The laser diode consists of four emitter stripes which share common electrodes on one laser chip. An 800-mu m-long cavity is formed by cleaving the substrate along the < 1 (1) over bar 00 >. orientation using laser scriber. The threshold current and voltage of the laser array diode are 2A and 10.5 V, respectively. A light output peak power of 12W under pulsed current injection at room temperature is achieved. We simulate the electric properties of GaN based laser diode in a co-planar structure and the results show that minimizing the difference of distances between the different ridges and the n-electrode and increasing the electrical conductivity of the n-type GaN are two effective ways to improve the uniformity of carrier distribution in emitter stripes. Two pairs of emitters on a chip are arranged to be located near the two n-electrode pads on the left and right sides, and the four stripe emitters can laser together. The laser diode shows two sharp peaks of light output at 408 and 409 nm above the threshold current. The full widths at half maximum for the parallel and perpendicular far field patterns are 8 degrees and 32 degrees, respectively.

Normal incidence p-i-n Ge heterojunction photodiodes on Si substrate grown by ultrahigh vacuum chemical vapor deposition

We report on normal incidence p-i-n heterojunction photodiodes operating in the near-infrared region and realized in pure germanium on planar silicon substrate. The diodes were fabricated by ultrahigh vacuum chemical vapor deposition at 600 degrees C without thermal annealing and allowing the integration with standard silicon processes. Due to the 0.14% residual tensile strain generated by the thermal expansion mismatch between Ge and Si, an efficiency enhancement of nearly 3-fold at 1.55 mu m and the absorption edge shifting to longer wavelength of about 40 nm are achieved in the epitaxial Ge films. The diode with a responsivity of 0.23 A/W at 1.55 mu m wavelength and a bulk dark current density of 10 mA/cm(2) is demonstrated. These diodes with high performances and full compatibility with the CMOS processes enable monolithically integrating microphotonics and microelectronics on the same chip.

Sub-nanosecond silicon-on-insulator optical micro-ring switch with low crosstalk

We demonstrate a sub-nanosecond electro-optical switch with low crosstalk in a silicon-on-insulator (SOI) dual-coupled micro-ring embedded with p-i-n diodes. A crosstalk of -23 dB is obtained in the 20-mu m-radius micro-ring with the well-designing asymmetric dual-coupling structure. By optimizations of the doping profiles and the fabrication processes, the sub-nanosecond switch-on/off time of < 400 ps is finally realized under an electrical pre-emphasized driving signal. This compact and fast-response micro-ring switch, which can be fabricated by complementary metal oxide semiconductor (CMOS) compatible technologies, have enormous potential in optical interconnects of multicore networks-on-chip.

Wafer-Level Testable High-Speed Silicon Microring Modulator Integrated with Grating Couplers

A wafer-level testable silicon-on-insulator-based microring modulator is demonstrated with high modulation speed, to which the grating couplers are integrated as the fiber-to-chip interfaces. Cost-efficient fabrications are realized with the help of optical structure and etching depth designs. Grating couplers and waveguides are patterned and etched together with the same slab thickness. Finally we obtain a 3-dB coupling bandwidth of about 60nm and 10 Gb/s nonreturn-to-zero modulation by wafer-level optical and electrical measurements.

A low-cost CMOS programmable temperature

A novel uncalibrated CMOS programmable temperature switch with high temperature accuracy is presented. Its threshold temperature T-th can be programmed by adjusting the ratios of width and length of the transistors. The operating principles of the temperature switch circuit is theoretically explained. A floating gate neural MOS circuit is designed to compensate automatically the threshold temperature T-th variation that results form the process tolerance. The switch circuit is implemented in a standard 0.35 mu m CMOS process. The temperature switch can be programmed to perform the switch operation at 16 different threshold temperature T(th)s from 45-120 degrees C with a 5 degrees C increment. The measurement shows a good consistency in the threshold temperatures. The chip core area is 0.04 mm(2) and power consumption is 3.1 mu A at 3.3V power supply. The advantages of the temperature switch are low power consumption, the programmable threshold temperature and the controllable hysteresis.

Fabrication of triplexers based on flattop SOI AWG

A triplexer is fabricated based on SOI arrayed waveguide gratings (AWGs). Three wavelengths of the triplexer operate at different diffraction orders of an arrayed waveguide grating. The signals of 1490 nm and 1550 nm, which are input from central input waveguide of an AWG, are demultiplexed and the signal of 1310 nm, which is input from central output waveguide of an AWG, is uploaded. The tested results show that the downloaded and uploaded signals have flat-top response. The insertion loss is 9 dB on chip, the nonadjacent crosstalk is less than -30 dB for 1490 nm and 1301 nm, and is less than -25 dB for 1550 nm, the 3 dB bandwidth equates that of the input light source.

Development of solar-blind AlGaN 128x128 ultraviolet focal plane arrays

This paper reports the development of solar-blind aluminum gallium nitride (AlGaN) 128x128 UV Focal Plane Arrays (FPAs). The back-illuminated hybrid FPA architecture consists of an 128x128 back-illuminated AlGaN PIN detector array that is bump-mounted to a matching 128x128 silicon CMOS readout integrated circuit (ROIC) chip. The 128x128 p-i-n photodiode arrays with cuton and cutoff wavelengths of 233 and 258 nm, with a sharp reduction in response to UVB (280-320 nm) light. Several examples of solar-blind images are provided. This solar-blind band FPA has much better application prospect.

High-frequency characterization of packaging network in to-can photodiode modules

A simple method for analyzing the effects of TO packaging network on the high-frequency response of photodiode modules is presented. This method is established based on the relations of the scattering parameters of the packaging network, photodiode chip, and module. It is shown that the results obtained by this method agree well with those obtained by the conventional comparison method. The proposed method is much more convenient since only the electrical domain measurements are required. (C) 2008 Wiley Periodicals, Inc.

Subtraction of scattering parameters for adiabatic intrinsic responses of semiconductor lasers

Thermal effects will make chip temperature change with bias current of semiconductor lasers, which results in inaccurate intrinsic response by the conventional subtraction method. In this article, an extended subtraction method of scattering parameters for characterizing adiabatic responses of laser diode is proposed. The pulsed injection operation is used to determine the chip temperature of packaged semiconductor laser, and an optimal injection condition is obtained by investigating the dependence of the lasing wavelength on the width and period of the injection pulse in a relatively wide temperature range. In this case, the scattering parameters of laser diode are measured on adiabatic condition and the adiabatic intrinsic responses of packaged laser diode are first extracted. It is found that the adiabatic intrinsic responses are evidently superior to those without thermal consideration. The analysis results indicate that inclusion of thermal. effects is necessary to acquire accurate intrinsic responses of semiconductor lasers. (C) 2008 Wiley Periodicals, Inc.

Characterization of parasitics from scattering parameters of laser diode

A novel method for characterizing the parasitics of parasitic network is proposed based on the relations between the scattering parameters of a semiconductor laser chip and laser diode. Experiments are designed and performed using our method. The analysis results are in good agreement with the measurements. Furthermore, how the parasitics change with the parasitic element values are investigated. The method only needs reflection coefficient of laser diode to be measured, which is simple because of the developed electrical-domain measurement techniques. 2007 Wiley Periodicals, Inc.

A Fully Integrated 900-MHz Passive RFID Transponder Front End With Novel Zero-Threshold RF-DC Rectifier

This paper presents a fully integrated CMOS analog front end for a passive 900-MHz radio-frequency identification (RFID) transponder. The power supply in this front end is generated from the received RF electromagnetic energy by using an RF-dc voltage rectifier. In order to improve the compatibility with standard CMOS technology, Schottky diodes in conventional RF-dc rectifiers are replaced by diode-connected MOS transistors with zero threshold. Meanwhile, theoretical analyses for the proposed rectifier are provided and verified by both simulation and measurement results. The design considerations of the pulsewidth-modulation (PWM) demodulator and the backscatter modulator in the front end are also discussed for low-power applications. The proposed front end is implemented in a 0.35-mu m 2P4M CMOS technology. The whole chip occupies a die area of 490 x 780 mu m(2) and consumes only 2.1 mu W in reading mode under a self-generated 1.5-V supply voltage. The measurement results show that the proposed rectifier can properly operate with a - 14.7-dBm input RF power at a power conversion efficiency of 13.0%. In the proposed RFID applications, this sensitivity corresponds to 10.88-m communication distance at 4-W equivalent isotropically radiated power from a reader base station.

Experimental demonstration of distributed feedback semiconductor lasers based on reconstruction-equivalent-chirp technology

In this paper we report, to the best of our knowledge, the first experimental realization of distributed feedback (DFB) semiconductor lasers based on reconstruction-equivalent-chirp (REC) technology. Lasers with different lasing wavelengths are achieved simultaneously on one chip, which shows a potential for the REC technology in combination with the photonic integrated circuits (PIC) technology to be a possible method for monolithic integration, in that its fabrication is as powerful as electron beam technology and the cost and time-consuming are almost the same as standard holographic technology. (C) 2009 Optical Society of America