Low-temperature (10 K) infrared measurement of interstitial oxygen in heavily antimony-doped silicon via wafer thinning

A new technique is reported for the rapid determination of interstitial oxygen in heavily Sb-doped silicon. This technique includes wafer thinning and low-temperature 10 K infrared measurement on highly thinned wafers. The fine structure of the interstitial oxygen absorption band around 1136 cm(-1) is obtained. Our results show that this method efficiently reduces free-carrier absorption interference, allowing a high reliability of measurement, and can be used at resistivities down to 1 x 10(-2) Omega cm for heavily Sb-doped silicon.

Determination of interstitial oxygen concentration in heavily doped silicon by combination of neutron irradiation and FTIR

于2010-11-23批量导入

Adsorption of oxygen on KxC（60） studied by photoelectron spectroscopy

国家自然科学基金

The influence of oxygen content on photoluminescence from Er-doped SiOx

SiOx films with oxygen concentrations ranging 13-46 at.% were deposited by plasma enhanced chemical vapor deposition (PECVD) technique using: pure SiH4 and N2O mixture. Erbium was then implanted at an energy of 500 KeV with dose of 2x10(15) ions/cm(2). The samples were subsequently annealed in N-2 for 20 sec at temperatures of (300-950 degrees C). Room temperature (RT) photo-luminescence (PL) data were collected by Fourier Transform Infrared Spectroscopy (FTIS) with an argon laser at a wavelength of 514.5 nm and an output power from 5 to 2500 mw. The intense room-temperature luminescence was observed around 1.54 mu m. The luminescence intensity increases by 2 orders of magnitude as compared with that of Er-doped Czochralski (CZ) Si. We found that the Er3+ luminescence depends strongly on the SiOx microstructure. Our experiment also showed that the silicon grain radius decreased with increasing oxygen content and finally formed micro-crystalline silicon or nano-crystalline silicon. As a result, these silicon small particles could facilitate the energy transfer to Er3+ and thus enhanced the photoluminescence intensity.

Effects and numerical analysis of argon gas flow on the oxygen concentration in Czochralski silicon single crystal growth

Argon gas, as a protective environment and carrier of latent heat, has an important effect on the temperature distribution in crystals and melts. Numeric simulation is a potent tool for solving engineering problems. In this paper, the relationship between argon gas flow and oxygen concentration in silicon crystals was studied systematically. A flowing stream of argon gas is described by numeric simulation for the first time. Therefore, the results of experiments can be explained, and the optimum argon flow with the lowest oxygen concentration can be achieved. (C) 2002 Elsevier Science B.V. All rights reserved.

高浓度O3和CO2对银杏、油松活性氧代谢的影响

采用开顶箱法模拟大气O3和CO2浓度升高（80 nmol•mol-1，700 μmol•mol-1），对银杏（Ginkgo biloba）和油松（Pinus tabulaeformis）幼树进行了连续两个生长季的熏蒸试验，研究了银杏叶片和油松针叶活性氧产生清除系统的生理变化过程，从活性氧代谢生理机制上揭示其抗性变化规律，为研究城市森林对全球变化的响应与反馈机制提供重要的理论基础。 得出如下结论： 1. 高浓度O3显著增加了银杏叶片ASA含量和抗氧化酶（SOD、APX）活性，增强了活性氧清除能力；但这种抗氧化能力的提高不足以消除高O3带来的氧化逆境，H2O2和MDA含量显著高于对照处理。与银杏相比，高浓度O3在试验初期诱导油松针叶SOD和APX酶活性升高，增强了活性氧清除能力；随着处理时间的延长ASA被耗竭，H2O2过量积累显著地抑制了抗氧化酶活性，加剧了氧化伤害。银杏和油松结果的差异表明，银杏对80 nmol•mol-1浓度的O3具有更高的抗性，而油松针叶活性氧代谢等生理过程受其影响更大。 2. 高浓度CO2对银杏叶片活性氧代谢无显著性影响。然而，高浓度CO2减缓了油松针叶活性氧的产生，抗氧化酶活性呈降低的趋势；但针叶内ASA含量显著高于对照处理，这说明高浓度CO2促进了油松针叶ASA合成，或者是减少了ASA的消耗。在试验处理后期，针叶内H2O2含量和MDA含量显著低于对照处理。 3. 高浓度O3和高浓度CO2复合处理中，高浓度CO2缓解了高浓度O3对银杏叶片和油松针叶造成的氧化胁迫，但其生理机制不同：银杏叶片ASA含量以及抗氧化酶活性普遍低于高浓度O3单因素处理而高于对照处理，并且叶片H2O2含量和膜质过氧化产物MDA含量显著低于高浓度O3单因素处理，这说明高浓度CO2通过减少活性氧的产生来缓解高浓度O3所致的活性氧积累以及膜质过氧化伤害。与银杏不同的是，高浓度CO2使油松针叶内ASA含量显著高于高浓度O3处理，增强了活性氧清除能力，减轻了活性氧对抗氧化酶活性的抑制作用，有效的控制了ROS的产生与清除之间的平衡，缓解了高O3带来的氧化伤害。

Molecular-dynamics investigation on polarization retention of barium titanate nanofilm arising from ordered oxygen vacancy

Molecular-dynamics simulations have been carried out to investigate the electric hysteresis of barium titanate nanofilm containing oxygen vacancy ordering array parallel to the {101} crystal plane. The results obtained show a significant weakening of polarization retention from non-zero value to zero as the size of the array was reduced to a critical level, which was attributed to the formation and motion of head-to-head domain wall structure under external field loading process. By comparing with materials containing isolated oxygen vacancies, it was found that the zero retention was due to the oxygen vacancy ordering array rather than to the concentration of oxygen vacancy. Copyright (C) EPLA, 2010