Application of fast oxygen sensors for investigations into air-path dynamics and EGR distribution in a diesel engine

The control of NOX emissions by exhaust gas recirculation (EGR) is of widespread application. However, despite dramatic improvements in all aspects of engine control, the subtle mixing processes that determine the cylinder-to-cylinder distribution of the recirculated gas often results in a mal-distribution that is still an issue for the engine designer and calibrator. In this paper we demonstrate the application of a relatively straightforward technique for the measurement of the absolute and relative dilution quantity in both steady state and transient operation. This was achieved by the use of oxygen sensors based on standard UEGO (universal exhaust gas oxygen) sensors but packaged so as to give good frequency response (∼ 10 ms time constant) and be completely insensitivity to the sample pressure and temperature. Measurements can be made at almost any location of interest, for example exhaust and inlet manifolds as well as EGR path(s), with virtually no flow disturbance. At the same time, the measurements yield insights into air-path dynamics. We argue that "dilution", as indicated by the deviation of the oxygen concentration from that of air, is a more appropriate parameter than EGR rate in the context of NOX control, especially for diesel engines. Experimental results are presented for the EGR distribution in a current production light duty 4-cylinder diesel engine in which significant differences were found in the proportion of the recirculated gas that reached each cylinder. Even the individual inlet runners of the cylinders exhibited very different dilution rates - differences of nearly 50% were observed at some conditions. An application of such data may be in the improvement of calibration and validation of CFD and other modelling techniques. Copyright © 2014 SAE International.

A dragline-forming mobile robot inspired by spiders.

Mobility of wheeled or legged machines can be significantly increased if they are able to move from a solid surface into a three-dimensional space. Although that may be achieved by addition of flying mechanisms, the payload fraction will be the limiting factor in such hybrid mobile machines for many applications. Inspired by spiders producing draglines to assist locomotion, the paper proposes an alternative mobile technology where a robot achieves locomotion from a solid surface into a free space. The technology resembles the dragline production pathway in spiders to a technically feasible degree and enables robots to move with thermoplastic spinning of draglines. As an implementation, a mobile robot has been prototyped with thermoplastic adhesives as source material of the draglines. Experimental results show that a dragline diameter range of 1.17-5.27 mm was achievable by the 185 g mobile robot in descending locomotion from the solid surface of a hanging structure with a power consumption of 4.8 W and an average speed of 5.13 cm min(-1). With an open-loop controller consisting of sequences of discrete events, the robot has demonstrated repeatable dragline formation with a relative deviation within -4% and a length close to the metre scale.

Hydrogen sensors based on AlGaN/AIN/GaN HEMT

Pt/AlGaN/AIN/GaN high electron mobility transistors (HEMT) were fabricated and characterized for hydrogen sensing. Pt and Ti/Al/Ni/Au metals were evaporated to form the Schottky contact and the ohmic contact, respectively. The sensors can be operated in either the field effect transistor (FET) mode or the Schottky diode mode. Current changes and time dependence of the sensors under the FET and diode modes were compared. When the sensor was operated in the FET mode, the sensor can have larger current change of 8 mA, but its sensitivity is only about 0.2. In the diode mode, the current change was very small under the reverse bias but it increased greatly and gradually saturated at 0.8 mA under the forward bias. The sensor had much higher sensitivity when operated in the diode mode than in the FET mode. The oxygen in the air could accelerate the desorption of the hydrogen and the recovery of the sensor. (c) 2007 Elsevier Ltd. All rights reserved.

Hydrogen sensors based on AlGaN/AIN/GaN Schottky diodes

Pt/AlGaN/AIN/GaN Schottky diodes are fabricated and characterized for hydrogen sensing. The Pt Schottky contact and the Ti/Al/Ni/Au ohmic contact are formed by evaporation. Both the forward and reverse currents of the device increase greatly when exposed to hydrogen gas. A shift of 0.3 V at 300K is obtained at a fixed forward current after switching from N-2 to 10%H-2+N-2. The sensor responses under different concentrations from 50ppm H-2 to 10%H-2+N-2 at 373K are investigated. Time dependences of the device forward current at 0.5 V forward bias in N-2 and air atmosphere at 300 and 373K are compared. Oxygen in air accelerates the desorption of the hydrogen and the recovery of the sensor. Finally, the decrease of the Schottky barrier height and sensitivity of the sensor are calculated.

Development of current-based microscopic defect analysis method using optical filling techniques for the defect study on heavily irradiated high-resistivity Si sensors/detectors

Current-based microscopic defect analysis method such as current deep level transient spectroscopy (I-DLTS) and thermally stimulated current have been developed over the years at Brookhaven National Laboratory (BNL) for the defect characterizations on heavily irradiated (Phi(n) >= 10(13) n/cm(2)) high-resistivity (>= 2 k Omega cm) Si sensors/detectors. The conventional DLTS method using a capacitance transient is not valid on heavily irradiated high-resistivity Si sensors/detectors. A new optical filling method, using lasers with various wavelengths, has been applied, which is more efficient and suitable than the traditional voltage-pulse filling. Optimum defect-filling schemes and conditions have been suggested for heavily irradiated high-resistivity Si sensors/detectors. (c) 2006 Published by Elsevier Ltd.

Hydrogen sensors based on Pt-AlGaN/GaN back-to-back Schottky diode

In this paper, platinum (Pt) with a thickness of 45 nm was sputtered on the surface of AlGaN/GaN heterostructure to form the Schottky contact and the back-to-back Schottky diodes were characterized for H-2 sensing at room temperature. Both the forward and reverse current of the devices increased with exposure to H-2 gas, which was attributed to Schottky barrier height reduction caused by hydrogen absorption in the catalytic metals. A shift of 0.7 V at 297 K was obtained at a fixed forward current of 0.1 mA after switching from N-2 to 40% H-2 in N-2. The sensor's responses under different concentrations from 2500 ppm H-2 to 40% H-2 in N-2 at 297 K were investigated. Time response of the sensor at a fixed bias of 1 V was given. Finally, the decrease of the Schottky barrier height and the sensitivity of the sensor were calculated. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Hydrogen sensors based on Pt-AlGN/AIN/GaN Schottky diode - art. no. 68291R

Pt/AlGaN/AlN/GaN Schottky diodes have been fabricated and characterized for H-2 sensing. Platinum (Pt) with a thickness of 20nm was evaporated on the sample to form the Schottky contact. The ohmic contact, formed by evaporated Ti/Al/Ni/Au metals, was subsequently annealed by a rapid thermal treatment at 860 degrees C for 30 s in N-2 ambience. Both the forward and reverse current of the device increased greatly when exposed to H-2 gas. The sensor's responses under different hydrogen concentrations from 500ppm to 10% H-2 in N-2 at 300K were investigated. A shift of 0.45V at 297K is obtained at a fixed forward current for switching from N-2 to 10% H-2 in N-2. Time response of the sensor at a fixed bias of 0.5 V was also measured. The turn-on response of the device was rapid, while the recovery of the sensor at N-2 atmosphere was rather slow. But it recovered quickly when the device was exposed to the air. The decrease in the barrier height of the diode was calculated to be about 160meV upon introduction of 10% H-2 into the ambient. The sensitivity of the sensor is also calculated. Some thermodynamics analyses have been done according to the Langmuir isotherm equation.

Monostable-Bistable Transition Logic Element (MOBILE) Model for Single-Electron Transistors

The traditional monostable-bistable transition logic element (MOBILE) structure is usually composed of resonant tunneling diodes (RTD). This letter describes a new type MOBILE structure consisting of single-electron transistors (i.e. SET-MOBILE). The analytical model of single-electron transistors ( SET) has been considered three states (including an excited state) of the discrete quantum energy levels. The simulation results show negative differential conductance (NDC) characteristics in I-DS-V-DS curve. The SET-MOBILE utilizing NDC characteristics can successfully realize the basic logic functions as the RTD-MOBILE.

A Novel Low-Power Digital Baseband Circuit for UHF RFID Tag with Sensors

A novel low-power digital baseband circuit for UHF RFID tag with sensors is presented in this paper. It proposes a novel baseband architecture and a new operating scheme to fulfill the sensor functions and to reduce power consumption. It is also compatible with the EPC C1G2 UHF RFID protocol. It adopts some advanced low power techniques for system design and circuit design: adaptive clock-gating, multi-clock domain and asynchronous circuit. The baseband circuit is implemented in 0.18um 1P3M standard CMOS process. ne chip area is 0.28 mm(2) excluding test pads. Its power consumption is 25uW under 1.1V power supply.

High resolution interrogation technique based on linear photodiode array spectrometer for fiber Bragg grating Sensors - art. no. 65952C

A linear photodiode array spectrometer based, high resolution interrogation technique for fiber Bragg grating sensors is demonstrated. Spline interpolation and Polynomial Approximation Algorithm (PAA) are applied to the data points acquired by the spectrometer to improve the original PAA based interrogation method. Thereby fewer pixels are required to achieve the same resolution as original. Theoretical analysis indicates that if the FWHM of a FBG covers more than 3 pixels, the resolution of central wavelength shift will arrive at less than 1 pm. While the number of pixels increases to 6, the nominal resolution will decrease to 0.001 pm. Experimental result shows that Bragg wavelength resolution of similar to 1 pm is obtained for a FBG with FWHM of similar to 0.2 nm using a spectrometer with a pixel resolution of similar to 70 pm.

Experiment on Qinghai-Tibet railroad subgrade temperature monitoring based on FBG sensors

Qinghai-Tibet Railway is the longest and highest plateau railway in the world. A long term monitoring system of the stability of the subgrade in the permafrost regions should be put forward immediately to prevent damage to the railway. As it's very difficult to set up the long-distance automatic monitoring system which contains a lot of measure points along the 550 kilometers railway in the permafrost area, we present a subgrade temperature monitor system based on fiber Bragg grating (FBG). In this paper the principles of the FBG was presented, and the feasibility of the FBG sensors in the permafrost area of Qinghai-Tibet plateau was analysized. We embedded fifteen FBG temperature sensors and thermal resistance temperature sensors. A contrast experiment is made while the two kinds of sensors are arranged in the same position. The result of the experiment shows that the accuracy of the FBG temperature sensors is less than 0.1 degrees C. and the FBG sensors can do well in the measurement of pattern which the temperature varies with the depth of the permafrost soil. The result also shows the stability of the FBG sensors in the bad environmental condition of Qinghai-Tibet plateau, which proves the feasibility of the application of FBG sensors and our monitoring system on the Qinghai-Tibet railway.

Development of current-based microscopic defect analysis method using optical filling techniques for the defect study on heavily irradiated high-resistivity Si sensors/detectors

Current-based microscopic defect analysis method such as current deep level transient spectroscopy (I-DLTS) and thermally stimulated current have been developed over the years at Brookhaven National Laboratory (BNL) for the defect characterizations on heavily irradiated (Phi(n) >= 10(13) n/cm(2)) high-resistivity (>= 2 k Omega cm) Si sensors/detectors. The conventional DLTS method using a capacitance transient is not valid on heavily irradiated high-resistivity Si sensors/detectors. A new optical filling method, using lasers with various wavelengths, has been applied, which is more efficient and suitable than the traditional voltage-pulse filling. Optimum defect-filling schemes and conditions have been suggested for heavily irradiated high-resistivity Si sensors/detectors. (c) 2006 Published by Elsevier Ltd.

mobile agent system model based on servlet technology

A mobile agent system model based on the servlet technology is presented, the constitution and working process of the system are analyzed. The implementation of key parts of this model and the current development situation as well as the development trend of mobile agent technology are introduced. The mobile agent system model enhances its internal structure recognition and facilitates the system expansion and reformation. The remotely mobile agent control method by means of the protocol modification is presented.