Pressure behaviour of photoluminescence from InAs submonolayer in GaAs matrix

We have investigated the dependence on hydrostatic pressure of the photoluminescence of an InAs submonolayer embedded in a GaAs matrix at 15 K and for pressure up to 8 GPa. Strong InAs-related emissions are observed in all three samples at ambient pressure. The temperature dependence of the emission intensity for these Peaks can be well characterized by the thermal activation of excitons from the InAs layer to the GaAs matrix. With increasing pressure, the InAs-related peaks shift to. higher energies. The pressure coefficients of these peaks are very close to that of the free exciton in bulk GaAs. Some weak peaks observed at pressures above 4.2 GPa are attributed to indirect transitions involving X states in the InAs layer. These results are similar to the pressure behaviour observed in the InAs/GaAs monolayer structures. A group of new lines has been observed in the spectra when pressure is increased beyond 2.5 GPa, which is attributed to the N isoelectronic traps in the GaAs matrix.

Intrawell and interwell transfer of excitons in growth-interrupted quantum wells

Intrawell and interwell transfers of excitons are observed by a temperature-dependent continuous-wave photoluminescence study of growth-interrupted single quantum wells. The intrawell transfer among the interface localization areas suggests a thermodynamic equilibrium between energy relaxation via LO-phonon emission and thermal population via phonon absorption. Thermal population is dominant in wider wells while relaxation is clearly observable in a four-monolayer narrow well at low temperatures. Interwell transfer of excitons also occurs between two narrow wells. (C) 1998 Academic Press.

Thermal activation and thermal transfer of localized excitons in InAs self-organized quantum dots

We have investigated the temperature dependence of photoluminescence (PL) properties of a number of InAs/GaAs heterostructures with InAs layer thickness ranging from 0.5 monolayer (ML) to 3 ML. The temperature dependence of the InAs exciton energy and linewidth was found to display a significant difference when the InAs layer thickness is smaller or larger than the critical thickness around 1.7 ML, indicating spontaneous formation of quantum dots (QDs). A model, involving exciton recombination and thermal activation and transfer, is proposed to explain the experimental data. In the PL thermal quenching study, the measured thermal activation energies of different samples demonstrate that the InAs wetting layer may act as a barrier for thermionic emission of carriers in high quality InAs multilayers, while in InAs monolayers and submonolayers the carriers are required to overcome the GaAs barrier to thermally escape from the localized states. (C) 1998 Academic Press Limited.

Optical anisotropy of InAs submonolayer quantum wells in a (311) GaAs matrix

The steplike density of states obtained from reflectance-difference spectroscopy demonstrates that ultrathin InAs layers should be regarded as two-dimensional quantum wells rather than isolated clusters, even for the sample with only 1/3 monolayer InAs in (311)-oriented GaAs. The degree of anisotropy is within the intrinsic anisotropy of (311)-oriented ultrathin quantum wells, indicating that there is little structural or strain anisotropy in the InAs islands. (C) 1998 Elsevier Science B.V.

Double crystal X-ray diffraction study of MBE self-organized InAs quantum dots

A series of GaAs/InAs/GaAs samples were studied by double crystal X-ray diffraction and the X-ray dynamic theory was used to analyze the X-ray diffraction results. As the thickness of InAs layer exceeds 1.7 monolayer, 3-dimensional InAs islands appear. Pendellosung fringes shifted. A multilayer structure model is proposed to describe the strain status in the InAs islands of the sample and a good agreement is obtained between the experimental and theoretical curves.

Hydrogen sensors based on Pt-AlGN/AIN/GaN Schottky diode - art. no. 68291R

Pt/AlGaN/AlN/GaN Schottky diodes have been fabricated and characterized for H-2 sensing. Platinum (Pt) with a thickness of 20nm was evaporated on the sample to form the Schottky contact. The ohmic contact, formed by evaporated Ti/Al/Ni/Au metals, was subsequently annealed by a rapid thermal treatment at 860 degrees C for 30 s in N-2 ambience. Both the forward and reverse current of the device increased greatly when exposed to H-2 gas. The sensor's responses under different hydrogen concentrations from 500ppm to 10% H-2 in N-2 at 300K were investigated. A shift of 0.45V at 297K is obtained at a fixed forward current for switching from N-2 to 10% H-2 in N-2. Time response of the sensor at a fixed bias of 0.5 V was also measured. The turn-on response of the device was rapid, while the recovery of the sensor at N-2 atmosphere was rather slow. But it recovered quickly when the device was exposed to the air. The decrease in the barrier height of the diode was calculated to be about 160meV upon introduction of 10% H-2 into the ambient. The sensitivity of the sensor is also calculated. Some thermodynamics analyses have been done according to the Langmuir isotherm equation.

Self-consistent analysis of AlSb/InAs high electron mobility transistor structures

The influences of channel layer width, spacer layer width, and delta-doping density on the electron density and its distribution in the AlSb/InAs high electron mobility transistors (HEMTs) have been studied based on the self-consistent calculation of the Schrodinger and Poisson equations with both the strain and nonparabolicity effects being taken into account. The results show that, having little influence on the total two dimensional electron gas (2DEG) concentration in the channel, the HEMT's channel layer width has some influence on the electron mobility, with a channel as narrow as 100-130 angstrom being more beneficial. For the AlSb/InAs HEMT with a Te delta-doped layer, the 2DEG concentration as high as 9.1 X 10(12) cm(-2) can be achieved in the channel by enhancing the delta-doping concentration without the occurrence of the parallel conduction. When utilizing a Si delta-doped InAs layer as the electron-supplying layer of the AlSb/InAs HEMT, the effect of the InAs donor layer thickness is studied on the 2DEG concentration. To obtain a higher 2DEG concentration in the channel, it is necessary to use an InAs donor layer as thin as 4 monolayer. To test the validity of our calculation, we have compared our theoretical results (2DEG concentration and its distribution in different sub-bands of the channel) with the experimental ones done by other groups and show that our theoretical calculation is consistent with the experimental results.

分子组装体的扫描探针显微学研究

本文简要评述了扫描探针显微学研究的发展过程、目前状况及发展方向，着重介绍了扫描探针显微学(SPM)在分子组装体研究中的一些应用。采用扫描探针显微学结合电化学的方法对自组装膜(SAMs)、表面活性剂(surfactant)、纳米颗粒(nanoparticles)等分子组装体系进行了研究，并结合IR、QCM、XPS、XRD等多种手段对分子组装体在电极表面的形态和结构进行了探讨。主要结果如下：1．SPM研究以杂多酸为基础的分子组装体我们通过将AsMo_(11)V0_(40)~(4-)杂多酸阴离子从其酸性溶液中自吸附至金表面的方法，制备了一类新的无机自组装膜。我们利用QCM、STM和电化学方法分别研究了AsMo_(11)VO_(40)~(4-)自组装膜的吸附过程、在Au表面的结构和电化学性质。QCM数据表明这个自组装过程可以用Langmuir吸附等温式来描述，其吸附自由能为-20 KJ/mol。 通过QCM测得的AsMo_(11)VO_(40)~(4-)自组装膜的表面覆盖度的最大值为1.7 * 10~(-10)mol/cm~2，这相当于一个AsMo_(11)VO_(40)~(4-)阴离子的密堆积单层。AsMo_(11)VO_(40)~(4-)自组装膜的循环伏安图上出现三对可逆的氧化还原峰，每对峰所对应的自组装膜的表面覆盖度都亦为1.78 * 10~(-10) mol/cm2，和QCM结果一致。现场STM图像显示AsMo_(11)VO_(40)~(4-)自组装膜十分的均一没有如何多层或聚集体的结构。高分辨STM图进一步显示在Au(111)表面的sMo_(11)VO_(40)~(4-)自组装膜于+0.7 V(vs．Ag | AgCl)表现出二维有序的四方晶体结构，晶格间距为10-11 A。这个值与sMo_(11)VO_(40)~(4-)阴离子的直径十分接近。从STM图我们也估算出AsMo_(11)VO_(40)~(4-)自组装膜的表面覆盖度为1.8 * 10~(-10) mol/cm~2，这和QCM以及电化学的实验结果都很接近。我们进一步研究了一种新的以杂多酸为基础的有机无机复合膜--砷钼钒杂多酸的十一烷基吡啶盐(CPMVA)--的制备、结构和电催化性质。通过在这种盐的丙酮溶液中循环电位扫描，我们可以在HOPG电极表面制备稳定的CPMVA膜。我们利用XPS、STM和电化学多种手段来表征CPMVA膜的结构和性质。这些研究表明：在新剥离HOPG表面CPMVA膜的结构为自聚集的分子团，而在预阴极化HOPG表面CPMVA膜的结构为自有序单层。CPMVA膜在酸性和丙酮溶剂中部表现出可逆的氧化还原动力学行为，这说明这种新类型的膜甚至能在有机溶剂中用作催化剂。当溶液的pH值大于7.O时，CPMVA膜也能维持其稳定性，它对pH值的依赖程度明显小于其无机物形式的膜(H_4AsMo_(11)VO_(40))对pH值的依赖程度。CPMVA膜对Br0_3-的还原表现出很好的电催化活性，催化电流与BrO_3~-的浓度的平方成正比。这种有很高稳定性的新类型杂多酸膜在催化剂领域中将有很广阔的应用前景。2．电化学STM研究吸附在金属表面的表面活性剂聚集体由于电位诱导引起的结构变化表面活性剂在表面的吸附已广泛地被用于限制电极表面的活性和稳定溶液中的胶体和纳米粒子，但是人们对表面活性剂在电极表面的结构和由于电位变化所引起的结构改变并不清楚。在这个工作中我们利用现场STM观察了电位控制下表面活性剂十二烷基磺酸钠(SDS)在Au(111)表面的吸附。STM图像显示通过控制电位SDS在Au(111)表面有一从半圆柱胶束单层向致密双层膜过渡的构象变化。我们也建立了SDS聚集体在Au(111)表面电位诱导结构变化的模型。就我们所知，这是第一次系统地研究表面活性剂聚集体在金属表面的电位诱导结构变化。3．在固体表面构筑有序的聚苯胺分子导线我们提出了一种新的通过分子设计构筑有序聚苯胺分子导线的新方法。首先，根据Saveant的方法我们在HOPG表面修饰上有序的4-氨基苯单层，然后溶液中的苯胺分子通过阶跃的方法被层层电聚合在4-氨基苯单层修饰的HOPG表面，形成有序的聚苯胺分子导线。FTIR-ERS和XPS结果证实HOPG表面上形成了聚苯胺。SPM图显示在HOPG表面的聚苯胺平面结构为有序的3~(1/2) * 3~(1/2) R 30°。小角X-射线反射结果表明聚苯胺分子导线是垂直站立在HOPG表面。电化学测量进一步表明聚苯胺分子导线的形成有利于加速电子传递速率。这种先分子设计后电聚合的方法可能会成为一类在固体表面制备有序导电聚合物分子导线的新方法。依据上一个实验，我们在金表面通过自组装的方法构筑了绝缘分子导线。我们选择β-环糊精(β-CD)作为包络4-氨基硫酚的理想主体分子。β-CD和4-氨基硫酚形成的包络物首先被自组装到Au表面，然后也通过阶跃的方法被层层电聚合在自组装膜修饰的Au表面，形成有序的聚苯胺分子导线。FTIR-ERS和XPS结果证实Au表面上形成了聚苯胺。低电流STM(LC-STM)图像表明在Au(111)表面的聚苯胺分子线为六角的二维有序，分子与分子之间的最相邻距离为15.5±0.5 A。这种先进行CD超分子自组装后电聚合的方法可能会成为一类制备导电聚合物绝缘分子导线的新方法。4．SPM研究在HOPG表面电化学合成的纳米材料我们通过脉冲恒电位方法从稀的苯胺酸性溶液(1mM苯胺 + 1 M HClO_4)在HOPG表面制备聚苯胺纳米颗粒。我们利用FTIR-ERS、XPS、TM-AFM手段来表征聚苯胺纳米颗粒的组成和结构。FTIR-ERS和XPS结果表明制得的聚苯胺纳米颗粒主要以亚胺形式存在。TM-AFM图像显示分散于HOPG表面的聚苯胺纳米颗粒的表面覆盖度约为10~(10)cm~(-2)。这些纳米颗粒都为圆盘型，直径为200到600埃，高度为10到30埃。这些纳米颗粒的大小随聚合电量由5.7 μC/cm~2增加到19.3 μC/cm~2而增大。我们提出了一种通过分子设计在HOPG表面制备金属纳米粒子的新方法。第一步，根据Saveant的方法我们在HOPG表面修饰上一个4-氨基苯单层。第二步，通过配位相互作用Ag~+能在4-氨基功能化的HOPG表面形成单层。第三步，通过脉冲恒电位方法我们就能在4-氨基苯功能化的HOPG制备Ag纳米颗粒。电化学测量证明了在HOPG表面上Ag纳米颗粒的形成。STM图像显示通过这种方法制得的Ag纳米颗粒的大小十分均一且在HOPG表面上的分散度很高。这种新方法可被广泛地用来在碳表面制备各种金属纳米粒子。

单分子膜模板调控氟化钡（氟化钙、硫酸钡－硫酸铅）晶体的生长研究

(1) Langmuir单分子膜对硫酸钡－硫酸铅混晶的影响：在不同的单分子膜下或单分子膜存在下掺杂铅离子时生长的晶体形貌不同。单分子膜对于电荷数相同、离子半径相近的成核离子有选择性。选择性取决于膜头基。(2)压缩单分子膜下氟化钙单晶的生长研究：二十二烷基羧酸单分子膜(BAM)诱导氟化钙晶体沿(110)晶面取向生长。晶体形状规则。但在无单分子膜或未压缩单分子膜下，生成的晶体无特定取向和规则的形貌。(3)氟化钡晶体在Langmuir单分子膜下的选择性结晶：无单分子膜存在时，混合摩尔比为1:2的氯化钡和氟化铵溶液有三种晶体生成。但是在铺展BAM时，可以获得(100)取向的氟化钡单晶。(4)不同单分子膜下氟化钡晶体的生长研究：通过研究不同单分子膜或亚相下氟化钡单晶薄膜。并且发现：亚相溶液的pH值、膜头基的电离程度以及膜头基的种类对于生成晶体的性质都有很大影响。(5)自组装单分子膜诱导氟化钡晶体生长的研究：把三氯锗丙酸组装的亲水的单晶硅片表面作为诱导模板。在自组装模板上得到(100)取向的氟化钡。

表面等离子体共振技术研究生物分子相互作用

本论文利用表面等离子体共振技术（sPR）进行了生物分子间相互作用的研究。主要包括可免疫识别、免疫分析、生物分子相互作用动力学以及层层组装生物分子功能膜等方面的研究。1．利用表面等离子体共振生物传感器对血清中HSA抗体的活性进行了检测。结果表明表面等离子体共振（SPR）生物传感器能快速实时检测anti-HSA抗体的活性，且传感片能够重复使用100次以上。2．应用表面等离子体共振生物传感器实现了对铁蛋白的实时免疫分析。实验中采用"三明治"放大法提高了分析的灵敏度和选择性。结果表明，在血清中分析铁蛋白的线性区间为30-200ng/ml，检测限为28ng/ml。应用pH2.0 glycine-HCl溶液进行再生，传感片可重复使用50次以上。3．通过溶液竞争法实现了S尸R技术对小分子化合物吗啡的检测。结果表明，溶液竞争法大大优于表面竞争法。同时求得了吗啡、mBSA与单抗及多抗之间相互作用的结合常数，并进行了比较。对实验现象给出了动力学上的合理解释。4．研究了通过静电吸附作用，DNA和PDDA交替组装多层膜。实时表面等离子体共振技术实时监测了DNA/PDDA多层膜的形成，研究了DNA在PDDA表面的吸附动力学。电化学阻抗谱和紫外可见光谱的研究结果也表明了这种层层组装多层膜的均一性。5．应用亲合素和生物素之间的强亲和作用，在金表面层层组装了由亲合素／生物素化抗体组成的蛋白质多层膜。使用实时BIA技术监测了多层膜的成膜过程，同时用电化学阻抗和傅立叶红外光谱对多层膜的成膜过程进行了表征。结果都表明了多层膜的均匀生长。同时，我们用亲和素生物素化抗体层层组装所制备的抗体多层膜对hlgG进行了灵敏检测。6．应用实时BIA技术研究了组蛋白与DNA之间的相互作用。发展了新的固定DNA传感片表面，消除了组蛋白与商品化传感片之间的非特异吸附。用Langmuir和Two State Reaction（Coormation change）模型对所得的动力学传感图进行了拟合，初步得到了动力学常数，直观的比较了组蛋白各亚组分与DNA相互作用之间的动力学差异。

稀土配合物分子组装及其性质研究

分子组装技术是一种在分子水平上进行的有序薄膜组装技术,包括Langmuir-Blodgett(LB)膜技术及自组装技术.该论文中,对稀土配合物及稀土杂多化合物的分子组装进行了系统的研究,取得了一些令人感兴趣的研究结果:合成了Na<,9>EuW<,10>O<,36>,Na<,9>DyW<,10>O<,36>,Na<,9>SmW<,10>O<,36>,K<,13>Eu(SiW<,11>O<,39>)<,2>,K<,13>Eu(GeW<,11>O<,39>)<,2>,K<,15>Eu(BW<,11>O<,39>)<,2>等稀土多金属氧酸盐,用LB膜技术将其组装入双十八烷基二甲基溴化铵(DODA)和十八胺(ODA)分子中,得到稀土杂多化合物LB膜.以稀土离子为亚相,制备了邻十六酰基苯甲酸-稀土(铽和铕)和对十六烷氧基苯甲酸铽LB膜.以1,2-二羟基苯-3,5-二磺酸铽(Tiron-Tb)为亚相,制备了DODA/Tiron-TbLB膜.以3-氨丙基三乙氧基硅烷为前驱体,制备了Na<,9>EuW<,10>O<,36>,Na<,9>DyW<,10>O<,36>的自组装膜.荧光光谱研究表明,在自组装膜中配体能将能量有效地传递给稀土离子.

扫描探针显微镜技术在自组装体系中的应用研究

本文简要评述了探针显微镜（SPM）技术的提出、发展及其在自组装体系中的研 究应用。采用SPM、电化学以及光谱等方法对低级醇化合物、磷脂膜、生物分子等 不同的自组装体系进行了研究，主要结果如下：1．研究了甲醇、乙醇、丁醇、己醇和辛醇分子在云母表面的吸附现象，提出 了随着碳链的增长，醇分子在云母表面的不同的吸附模型及变化规律；2．研究了辛醇分子在云母表面的吸附动力学过程，监测了辛醇在云母表面形成自组装膜的成核一生长一融合的生长过程；3，研究了由探针扫描引起的吸附十一醇分子在云母表面重排为规则有序膜结构的现象；4．研究“二-甲基一二-十八．烷基嗅化胺分子在云母表面用溶剂扩散方法展开形成类脂双层膜的动力学过程，提出了一种简便、易行的成膜方法；5．实现了细胞色素C在纳米金和硅溶胶一凝胶共同修饰的金电极上的直接电化学；6．实现了细胞色素C在疏基十一梭酸和琉基己醇的混合自组装膜上的直接电化学；7．实现了辣根过氧化物酶在纳米金修饰的导电玻璃电极上对过氧化氢的直接催化还原。

CoMoK/γ-Al_2O_3类催化剂的研究

钴离子在γ-Al_2O_3上的吸附等温线符合Langmuir等温式，而钼的吸附等温线符合Freundlich等温式。在等孔体积法制备催化剂时，低PH下由于Al_2O_3吸附钼较多而对钴的吸附较少导致钴、钼在颗粒中分布不均；在高PH值下，由于钼的吸附量锐减，可用共浸法得到钴、钼分布均匀的催化剂。K_2CO_3在均匀型CoMo/Al_2O_3催化剂上的吸附等温线符合Langmuir等温式，虽然吸附量较大，但在浸渍液中今是足够时，等孔体积法也能得到均匀分布的结果。Co/Al_2O_3氧化态催化剂中存在和Al_2O_3表面作用的Co_3O_4及表面Co~(2+)离子；Co~(2+)/Al_2O_3中，K~+的存在减弱了Al_2O_3表面上的Co~(2+)和表面的作用，有是于Co~(2+)的还原和硫化。Mo/Al_2O_3催化剂中Mo以+6价的形式存在于Al_2O_3表面上，Al~(3+)对表面上Mo的极化作用Mo~(6+)在低温易于被部分还原，Mo-o-Al键作用较强，使Mo的完全还原又比MoO_3困难；K~+的存在减弱了MoK/Al_2O_3氧化态催化剂中的Mo-o-Al键强度，有助于Mo的深度还原和硫化。Co, Mo水溶液等孔体积共浸制备的氧化态CoMo/Al_2O_3催化剂中，存在CoMoO_4，并有利于Co, Mo硫化为Co_9S_8和MoS_2；CoMoK/Al_2O_3氧化态催化剂中，K~+的存在破坏了催化剂中CoMoO_4结构，被置换出的Co~(2+)和Al_2O_3表面发生一定作用使Co的硫化程度降低；当K_2CO_3在催化剂中含量小于15wt%时，Mo的硫化随K~+含量增加而增大，但当K_2CO_3在催化剂中含量高于15wt%，Mo的硫化程度随K~+含量增加而微有减少。CoMoK/Al_2O_3, CoMo/Al_2O_3, MoK/Al_2O_3, Mo/Al_2O_3, CoK/Al_2O_3, Co/Al_2O_3催化剂在H_2S/H_2的TPS过程中，H_2S 对活性组份起硫化和还原作用，H_2仅仅是还原了反应中生成的单质S。

Ultrafast Kerr rotations and zero-field dephasing time of electron spins in InAs/GaAs quantum disks

Time-resolved Kerr rotation (TRKR) measurements based on pump-probe arrangement were carried out at 5 K on the monolayer fluctuation induced InAs/GaAs quantum disks grown on GaAs substrate without external magnetic field. The lineshape of TRKR signals shows an unusual dependence on the excitation wavelength, especially antisymmetric step-shaped structures appearing when the excitation wavelength was resonantly scanned over the heavy- and light-hole subbands. Moreover, these step structures possess an almost identical decay time of similar to 40 Ps which is believed to be the characteristic spin dephasing time of electrons in the extremely narrow InAs/GaAs quantum disks.

MATRIX DESCRIPTION OF DYNAMIC HOLZ DIFFRACTION TESTED ON THE STRAINED LAYER SUPERLATTICE SI/GESI

A matrix formulation has been developed and applied to simulate large-angle convergent-beam electron diffraction (LACBED) patterns from the Si/GexSi1-x strained layer superlattice (SLS). Good quantitative agreement has been achieved between experimental and simulated patterns. By utilizing dynamical HOLZ line patterns, we demonstrate that an accuracy of better than 0.1% can be achieved in the determination of the averaged lattice constant of a SLS, and the averaged number of layers of atoms within one period of SLS can be determined up to a single monolayer.