Multi-wavelength erbium-doped fibre lasers on assistance of high-nonlinear photonic-crystal fibres

On the basis of self-stability effect of four-wave mixings (FWMs) in high-nonlinear photonic-crystal fibres, a novel multi-wavelength erbium-doped fibre (EDF) laser is proposed and demonstrated experimentally at room temperature. The proposed lasers have the capacity of switching and tuning with excellent uniformity and stability. By means of adjusting the attenuators, the triple-, four-, or five-wavelength EDF lasers can be lasing simultaneously. With the assistance of the FWM self-stability function, the multi-wavelength spectrum is excellently stabilized with uniformity less than 0.9 dB.

Lateral periodicity in highly-strained (GaIn)As/Ga(PAs) superlattices investigated by X-ray scattering techniques

In this work we investigate the lateral periodicity of symmetrically strained (GaIn)As/GaAs/Ga(PAs)/GaAs superlattices by means of X-ray scattering techniques. The multilayers were grown by metalorganic Vapour phase epitaxy on (001)GaAs substrates, which were intentionally off-oriented towards the [011]-direction. The substrate off-orientation and the strain distribution was found to affect the structural properties of the superlattices inducing the generation of laterally ordered macrosteps. Several high-resolution triple-crystal reciprocal space maps, which were recorded for different azimuth angles in the vicinity of the (004) Bragg diffraction and contour maps of the specular reflected beam collected in the vicinity of the (000) reciprocal lattice point, are reported and discussed. The reciprocal space maps clearly show a two-dimensional periodicity of the X-ray peak intensity distribution which can be ascribed to the superlattice periodicity in the direction of the surface normal and to a lateral periodicity in a crystallographic direction coinciding with the miscut orientation. The distribution and correlation of the vertical as well as of the lateral interface roughness was investigated by specular reflectivity and diffuse scattering measurements. Our results show that the morphology of the roughness is influenced by the off-orientation angle and can be described by a 2-dimensional waviness.

Structural ordering and interface morphology in symmetrically strained (GaIn)As/Ga(PAs) superlattices grown on off-oriented GaAs(100)

In this work we investigate the structural properties of symmetrically strained (GaIn)As/GaAs/Ga(PAs)/GaAs superlattices by means of x-ray diffraction, reciprocal-space mapping, and x-ray reflectivity. The multilayers were grown by metalorganic vapor-phase epitaxy on (001) GaAs substrates intentionally off-oriented towards one of the nearest [110] directions. High-resolution triple-crystal reciprocal-space maps recorded for different azimuth angles in the vicinity of the (004) Bragg diffraction clearly show a double periodicity of the x-ray peak intensity that can be ascribed to a lateral and a vertical periodicity occurring parallel and perpendicular to the growth surface. Moreover, from the intensity modulation of the satellite peaks, a lateral-strain gradient within the epilayer unit cell is found, varying from a tensile to a compressive strain. Thus, the substrate off-orientation promotes a lateral modulation of the layer thickness (ordered interface roughness) and of the lattice strain, giving rise to laterally ordered macrosteps. In this respect, contour maps of the specular reflected beam in the vicinity of the (000) reciprocal lattice point were recorded in order to inspect the vertical and lateral interface roughness correlation, A semiquantitative analysis of our results shows that the interface morphology and roughness is greatly influenced by the off-orientation angle and the lateral strain distribution. Two mean spatial wavelengths can be determined, one corresponding exactly to the macrostep periodicity and the other indicating a further interface waviness along the macrosteps. The same spatial periodicities were found on the surface by atomic-force-microscopy images confirming the x-ray results and revealing a strong vertical correlation of the interfaces up to the outer surface.

Thermal analysis and test for single concentrator solar cells

A thermal model for concentrator solar cells based on energy conservation principles was designed. Under 400X concentration with no cooling aid, the cell temperature would get up to about 1200℃.Metal plates were used as heat sinks for cooling the system, which remarkably reduce the cell temperature. For a fixed concentration ratio, the cell temperature reduced as the heat sink area increased. In order to keep the cell at a constant temperature, the heat sink area needs to increase linearly as a function of the concentration ratio. GaInP/GaAs/Ge triple-junction solar cells were fabricated to verify the model. A cell temperature of 37℃ was measured when using a heat sink at 400X concentratration.

MOCVD-Grown AlGaN/AlN/GaN HEMT Structure with High Mobility GaN Thin Layer as Channel on SiC

AlGaN/AlN/GaN high electron mobility transistor (HEMT) structures with a high-mobility GaN thin layer as a channel are grown on high resistive 6H-SiC substrates by metalorganic chemical vapor deposition. The HEMT structure exhibits a typical two-dimensional electron gas (2DEG) mobility of 1944cm2/(V · s) at room temperature and 11588cm2/(V· s) at 80K with almost equal 2DEG concentrations of about 1.03 × 1013 cm-2 High crystal quality of the HEMT structures is confirmed by triple-crystal X-ray diffraction analysis. Atomic force microscopy measurements reveal a smooth AlGaN surface with a root-mean-square roughness of 0. 27nm for a scan area of 10μm × 10μm. HEMT devices with 0.8μm gate length and 1.2mm gate width are fabricated using the structures. A maximum drain current density of 957mA/mm and an extrinsic transconductance of 267mS/mm are obtained.

构建虚拟网络的网络分析仪夹具校准新方法

一般矢量网络分析仪(VNA)的双端口测试夹具校准，至少需要三个已知标准才能实现．本文基于Triple-Through理论构建两个虚拟的对称网络，提出了一种只需要采用一个标准的网络分析仪双端口测试夹具校准新方法．采用这种方法校准测试夹具后，扣除夹具影响的实验结果与没有测试夹具转接直接测试数据十分吻合，证明该方法精度高，而且简单易行．

RF-MBE Grown AlGaN/GaN HEMT Structure with High Al Content

A Si doped AlGaN/GaN HEMT structure with high Al content (x= 44%) in the barrier layer is grown on sapphire substrate by RF-MBE. The structural and electrical properties of the heterostructure are investigated by the triple axis X-ray diffraction and Van der Pauw-Hall measurement, respectively. The observed prominent Bragg peaks of the GaN and AlGaN and the Hall results show that the structure is of high quality with smooth interface.fabricated and characterized. Better DC characteristics, maximum drain current of 1.0A/mm and extrinsic transconductance of 218mS/mm are obtained when compared with HEMTs fabricated using structures with lower Al mole fraction in the AlGaN barrier layer. The results suggest that the high Al content in the AlGaN barrier layer is promising in improving material electrical properties and device performance.

容错控制系统的一类新型阵列码技术

随着现代化生产的不断发展,控制系统变得日渐复杂,出现各类故障的可能性也随之增大.为了解决控制系统复杂化引起系统安全性减低的问题,人们将编码技术作为一种软件冗余技术应用于控制系统,由于控制系统具有强实时性的要求,因此阵列码技术成为主流技术.阵列码技术虽然具有纠错时间短的优点,但是纠错能力有限,一般只能纠正一到两个磁盘错误.针对上述不足提出一种能够在三个磁盘同时发生错误的条件下有效恢复数据的新型阵列码-扩展X码,给出编译码算法,并将其应用于火箭控制系统的容错.

Applicability of the reaction window theory

Based on the molecular Coulombic over barrier model for description of slow ion-atom collisions, the reaction window theory related to projectile velocity is presented briefly. According to the theory, the state-selective differential cross sections of single electron capture in O8+ -H, A(8+) -H, Ar8+-He, Ne10+-He and Ar18+-He collisions at different collision velocities are calculated and compared with experimental results. Calculations are also done for single, double, and triple electron capture in N-15(7+)-Ne collisions at fixed velocity of 0.53 a.u., and are compared with experimental data. It is found that the predictions of the final electronic state distribution of captured electron(s) are in agreement with experimental data, and both theory and experiments show that the widths of the reaction window increase with the projectile velocity. The differential cross sections predicted by the theory are larger for smaller Q-values, vice versa, when compared with experimental data.

Multi-electron processes in C-13(6+) ions with neon collisions in energy region 4.15-11.08 keV/u

The cross-section ratios of double-, triple-, quadruple-, and the total multi-electron processes to the single electron capture process sigma(DE)/sigma(SC), sigma(TE)/sigma(SC), sigma(QE)/sigma(SC) and sigma(ME)/sigma(SC)) as well as the relative ratios among reaction channels in double-electron active, triple-electron active and quadruple- electron active are measured in C-13(6+) -Ne collision in the energy region of 4.15-11.08 keV/u by employing position-sensitive and time-of-flight coincident techniques. It is determined that the cross-section ratios sigma(DE)/sigma(SC), sigma(TE)/sigma(SC), sigma(QE)/sigma(SC) and sigma(ME)/sigma(SC) are approximately the constants of 0.20 +/- 0.03, 0.16 +/- 0.04, 0.06 +/- 0.02 and 0.42 +/- 0.05. These values are obviously smaller than the predictions of the molecular Coulomb over-the-barrier model (MCBM) [J. Phys. B 23 (1990) 4293], the extended classical over-the-barrier model (ECBM) [J. Phys. B 19 (1986) 2925] and the semiempirical scaling laws (SL) [Phys. Rev. A 54 (1996) 4127]. However, the relative ratios among partial processes of DE, TE and QE are found to depend on collision energy, which suggests that the collision dynamics depends on the collision velocity. The limitation of velocity-independent character of ECBM, MCBM and SL is undoubtedly shown.

Influence of core property on multi-electron process in slow collisions of isocharged sequence ions with neon

Influence of core property on multi-electron process in the collisions of q = 6-9 and 11 isocharged sequence ions with Ne is investigated in the keV/u region The cross-section ratios of double-, triple-, quadruple- and total multi-electron processes to the single electron capture process as well as the partial ratios of different reaction channels to the relevant multi-electron process are measured by using position-sensitive and time-of-flight techniques The experimental data are compared with the theoretical predictions including the extended classical over-barrier model, the molecular Columbic barrier model and the semi-empirical scaling law Results show a core effect on multi-electron process of isocharge ions colliding with Neon, which is consistent with the results of Helium we obtained previously

Amphiphilic Core-Shell Nanocarriers Based On Hyperbranched Poly(ester amide)-star-PCL: Synthesis, Characterization, and Potential as Efficient Phase Transfer Agent

Amphiphilic biodegradable star-shaped polymer was conveniently prepared by the Sn(Oct)(2)-catalyzed ring opening polymerization of c-caprolactone (CL) with hyperbranched poly(ester amide) (PEA) as a macroinitiator. Various monomer/initiator ratios were employed to vary the length of the PCL arms. H-1 NMR and FTIR characterizations showed the successful synthesis of star polymer with high initiation efficiency. SEC analysis using triple detectors, RI, light scattering, and viscosity confirmed the controlled manner of polymerization and the star architecture.

Very low hysteresis organic thin-film transistors

Very low hysteresis vanadyl-phthalocyanine/para-sexiphenyl thin-film transistors (TFTs) have been fabricated using benzocyclobutenone (BCBO) derivatives/tantalum pentoxide (Ta2O5)/BCBO triple gate dielectrics. The field effect mobility, on/off current ratio and threshold voltage of organic TFTs are 0.45 cm(2) V-1 s(-1), 3.5 x 10(4) and -6.8 V, respectively. To clarify the mechanism of hysteresis, devices with different dielectrics have been studied. It is found that the bottom BCBO derivatives (contact with a gate electrode) block the electron injection from a gate electrode to dielectrics.

Numerical simulation of coil-helix transition processes of gelatin

Gelatin is widely used in food, pharmaceutical, and photographic industries due to the coil-helix transition, whereas the structural inhomogeneity considerably affects its essential properties closely connecting with the industrial applications. The spatially structural inhomogeneity of the gelatin caused by the uneven and unstable temperature field is analyzed by the finite element method during the cooling-induced coil-helix transition process. The helix conversion and the crosslinking density as functions of time and spatial grid are calculated by the incremental method. A length distribution density function is introduced to describe the continuous length distributions of two kinds of triple helices.

Hydrogen-Bonding Recognition-Induced Color Change of Gold Nanoparticles for Visual Detection of Melamine in Raw Milk and Infant Formula

The color change induced by triple hydrogen-bonding recognition between melamine and a cyanuric acid derivative grafted on the surface of gold nanoparticles can be used for reliable detection of melamine. Since such a color change can be readily seen by the naked eye, the method enables on-site and real-time detection of melamine in raw milk and infant formula even at a concentration as low as 2.5 ppb without the aid of any advanced instruments.