Very low hysteresis organic thin-film transistors
Data(s) |
2009
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Resumo |
Very low hysteresis vanadyl-phthalocyanine/para-sexiphenyl thin-film transistors (TFTs) have been fabricated using benzocyclobutenone (BCBO) derivatives/tantalum pentoxide (Ta2O5)/BCBO triple gate dielectrics. The field effect mobility, on/off current ratio and threshold voltage of organic TFTs are 0.45 cm(2) V-1 s(-1), 3.5 x 10(4) and -6.8 V, respectively. To clarify the mechanism of hysteresis, devices with different dielectrics have been studied. It is found that the bottom BCBO derivatives (contact with a gate electrode) block the electron injection from a gate electrode to dielectrics. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Li CH;Pan F;Zhu F;Song D;Wang H;Yan DH.Very low hysteresis organic thin-film transistors,SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2009,24(8):文献编号:085009 |
Palavras-Chave | #FIELD-EFFECT TRANSISTORS #ACTIVE-MATRIX DISPLAYS #GATE INSULATORS #DIELECTRICS #FABRICATION #DRIVEN #LAYERS #OXID |
Tipo |
期刊论文 |