Very low hysteresis organic thin-film transistors


Autoria(s): Li CH; Pan F; Zhu F; Song D; Wang H; Yan DH
Data(s)

2009

Resumo

Very low hysteresis vanadyl-phthalocyanine/para-sexiphenyl thin-film transistors (TFTs) have been fabricated using benzocyclobutenone (BCBO) derivatives/tantalum pentoxide (Ta2O5)/BCBO triple gate dielectrics. The field effect mobility, on/off current ratio and threshold voltage of organic TFTs are 0.45 cm(2) V-1 s(-1), 3.5 x 10(4) and -6.8 V, respectively. To clarify the mechanism of hysteresis, devices with different dielectrics have been studied. It is found that the bottom BCBO derivatives (contact with a gate electrode) block the electron injection from a gate electrode to dielectrics.

Identificador

http://202.98.16.49/handle/322003/11251

http://www.irgrid.ac.cn/handle/1471x/147864

Idioma(s)

英语

Fonte

Li CH;Pan F;Zhu F;Song D;Wang H;Yan DH.Very low hysteresis organic thin-film transistors,SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2009,24(8):文献编号:085009

Palavras-Chave #FIELD-EFFECT TRANSISTORS #ACTIVE-MATRIX DISPLAYS #GATE INSULATORS #DIELECTRICS #FABRICATION #DRIVEN #LAYERS #OXID
Tipo

期刊论文