Bibliography on semiconductor nuclear radiation detectors /

"December 6, 1960."

Bibliography on semiconductor nuclear radiation detectors /

Included are 464 selected references on the theory, manufacture, properties, performance, and utliization of semiconductor materials for the detection of nuclear radiation. Reports and open literature references are covered through January 1962.

Zn₃P₂ as an improved semiconductor for photovoltaic solar cells : ninth quarterly report for September 1 - November 31, 1980 /

"Work Performed Under Contract No. AC02-77CH00178."

Design of the program-controlled semiconductor and printed circuit board test console /

"October 21, 1963"

Molecular bandpass amplifiers. Contract AF33(616)-7252. Interim scientific report no. 1- [of the] Development Laboratory, Semiconductor Division, Hughes Aircraft Co.

Mode of access: Internet.

All semiconductor distributed aerospace processor/memory study /

"August 1973."

Semiconductor measurement technology : techniques for measuring the integrity of passivation overcoats on integrated circuits /

Mode of access: Internet.

Semiconductor /

Mode of access: Internet.

Semiconductor detectors in medicine, March 8-9, 1973, presented by Nuclear Medicine Division, Department of Radiology, University of California School of Medicine and Continuing Education in Health Sciences, University of California, San Francisco, California, supported in part by KeVex Corporation, Burlingame, California [et al.

Mode of access: Internet.

Semiconductor measurement technology : reliability technology for cardiac pacemakers II, a workshop report /

Mode of access: Internet.

Laser scanning of active semiconductor devices--videotape script /

"This activity was supported by the Defense Advanced Research Projects Agency and the National Bureau of Standards."

The effect of nuclear radiation on semiconductor devices; report to Air Research and Development Command, Wright Air Development Division.

Includes bibliography.

Semiconductor measurement technology:

Title varies slightly.

Toward a national semiconductor strategy : second annual report of the National Advisory Committee on Semiconductors.

"February 1991."

Enhanced spin injection efficiency in ferromagnet/semiconductor tunnel junctions

Within the ballistic transport picture, we have investigated the spin-polarized transport properties of a ferromagnetic metal/two-dimensional semiconductor (FM/SM) hybrid junction and an FM/FM/SM structure using quantum tunnelling theory. Our calculations indicate explicitly that the low spin injection efficiency (SIE) from an FM into an SM, compared with a ferromagnet/normal metal junction, originates from the mismatch of electron densities in the FM and SM. To enhance the SIE from an FM into an SM, we introduce another FM film between them to form FM/FM/SM double tunnel junctions, in which the quantum interference effect will lead to the current polarization exhibiting periodically oscillating behaviour, with a variation according to the thickness of the middle FM film and/or its exchange energy strength. Our results show that, for some suitable values of these parameters, the SIE can reach a very high level, which can also be affected by the electron density in the SM electrode.