974 resultados para Markov Regime Switching


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Active Voltage Control (AVC) is an implementation of classic Proportional-Derivative (PD) control and multi-loop feedback control to force IGBT to follow a pre-set switching trajectory. The initial objective of AVC was mainly to synchronise the switching of IGBTs connected in series so as to realise voltage balancing between devices. For a single IGBT switching, the AVC reference needs further optimisation. Thus, a predictive manner of AVC reference generation is required to cope with the nonlinear IGBT switching parameters while performing low loss switching. In this paper, an improved AVC structure is adopted along with a revised reference which accommodates the IGBT nonlinearity during switching and is predictive based on current being switched. Experimental and simulation results show that close control of a single IGBT switching is realised. It is concluded that good performance can be obtained, but the proposed method needs careful stability analysis for parameter choice. © 2013 IEEE.

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A code-label recognition time of less than 500ps is demonstrated using low-cost FIRfilters. The electronically-processed label provides a control signal from an auto-correlated label. Error-free electronic code-label switching of an optical 10Gb/s signal is demonstrated. © 2010 Optical Society of America.

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We show for the first time that for a given switching pulse width, the maximum switching speed obtainable from a Mach-Zehnder interferometer employing semiconductor optical amplifiers is strongly dependent on the SOA chirp characteristics. © 2005 Optical Society of America.

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We experimentally demonstrate femtosecond switching of a fully packaged hybrid-integrated Mach-Zehnder switch. A record switching window of 620fs at full-width-half-maximum is achieved. © 2004 Optical Society of America.

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We show for the first time that for a given switching pulse width, the maximum switching speed obtainable from a Mach-Zehnder interferometer employing semiconductor optical amplifiers is strongly dependent on the SOA chirp characteristics. © 2005 Optical Society of America.

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We investigate theoretically the spin splitting of the exciton states in semiconductor coupled quantum dots (CQDs) containing a single magnetic ion. We find that the spin splitting can be switched on/off in the CQDs via the sp-d exchange interaction using the electric field. An interesting bright-to-dark exciton transition can be found and it significantly affects the photoluminescence spectrum. This phenomenon is induced by the transition of the ground exciton state, arising from the hole mixing effect, between the bonding and antibonding states. (C) 2008 American Institute of Physics.

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The antibunching properties of the fluorescence from a two-level ideal system in a 12-fold quasiperiodic photonic crystal are investigated based on the calculated local density of states. We found that the antibunching phenomenon of the fluorescence from two-level ideal systems could be significantly changed by varying their positions, i.e., perfect antibunching and antibunching with damped Rabi oscillation phenomenon occurred in different positions and at different frequencies in photonic crystals as a result of the large differences in the local density of states. This study revealed that the multi-level coherence of fluorescence from a two-level ideal system could be manipulated by controlling the position of the two-level ideal system in photonic crystals and the emission frequency in the photonic band structure. Copyright (C) EPLA, 2008

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We show that the Coulomb blockade in parallel dots pierced by magnetic flux Phi completely blocks the resonant current for any value of Phi except for integer multiples of the flux quantum Phi(0). This non-analytic (switching) dependence of the current on Phi arises only when the dot states that carry the current are of the same energy. The time needed to reach the steady state, however, diverges when Phi -> n Phi(0). Copyright (C) EPLA, 2009

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Photoluminescence (PL) spectra of the GaInNAs/GaAs single quantum well (SQW) with different N compositions are carefully studied in a range of temperatures and excitation power densities. The anomalous S-shape temperature dependence of the PL peak is analysed based on the competition and switching-over between the peaks related to N-induced localized states and the peak related to interband excitonic recombination. It is found that with increasing N composition, the localized energy increases and the turning point of the S-shape temperature dependence occurs at higher temperature, where the localized carriers in the bandtail states obtain enough thermal activation energy to be dissociated and delocalized. The rapid thermal annealing (RTA) effectively reduces the localized energy and causes a decrease of the switching-over temperature.

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A rearrangeable nonblocking thermo-optic 4 x 4 switching matrix is demonstrated. The matrix, which consists of five 2 x 2 multimode interference-based Mach-Zehnder interferometer (MMI-MZI) switch elements, is fabricated in silicon-on-insulator waveguide system. The average excess loss for the optical path experiencing 2 and 3 switch elements is 6.6 and 10.1 dB respectively. The crosstalk in the matrix is measured to be between -12 and -19 dB. The switching time of the device is less than 30 mu s.

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GaAs absorber was grown at low temperature (550degreesC) by metal organic chemical vapour deposition (MOCVD) and was used as an output coupler with which we realized Q-switching modelocked Yb3+-doped fibre laser. The shortest period of the envelope of the Q-switched modelocking is about 3mus. The modelocking threshold is 4.27W and the highest average output pulse power is 290 mW. The modelocking frequency is 12 MHz.

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By using a composite semiconductor absorber and an output coupler, we demonstrated a Q-switched and mode-locked diode-pumped microchip Nd:YVO4 laser. With a 350-mu m-thick crystal, the width of the Q-switched envelope was as short as 12 ns; the repetition rate of the mode-locked pulses inside the Q-switched pulse was more than 10 GHz. The average output power was 335 mW at a maximum pump power of 1.6 W. Q-switched envelope widths of 21 and 31 ns were also achieved with crystals 0.7 and 1.0 mm thick, respectively.