Temperature-induced switching-over of the luminescence transitions in GaInNAs/GaAs quantum wells
Data(s) |
2004
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Resumo |
Photoluminescence (PL) spectra of the GaInNAs/GaAs single quantum well (SQW) with different N compositions are carefully studied in a range of temperatures and excitation power densities. The anomalous S-shape temperature dependence of the PL peak is analysed based on the competition and switching-over between the peaks related to N-induced localized states and the peak related to interband excitonic recombination. It is found that with increasing N composition, the localized energy increases and the turning point of the S-shape temperature dependence occurs at higher temperature, where the localized carriers in the bandtail states obtain enough thermal activation energy to be dissociated and delocalized. The rapid thermal annealing (RTA) effectively reduces the localized energy and causes a decrease of the switching-over temperature. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Bian, LF; Jiang, D; Liang, XG; Lu, SL .Temperature-induced switching-over of the luminescence transitions in GaInNAs/GaAs quantum wells ,CHINESE PHYSICS LETTERS,MAR 2004,21 (3):548-551 |
Palavras-Chave | #半导体材料 #MOLECULAR-BEAM EPITAXY |
Tipo |
期刊论文 |