Evanescent-wave coupled right angled buried waveguide: Applications in carbon nanotube mode-locking

We present an evanescent-field device based on a right-angled waveguide. This consists of orthogonal waveguides, with their points of intersection lying along an angled facet of the chip. Light guided along one waveguide is incident at the angled dielectric-air facet at an angle exceeding the critical angle, so that the totally internally reflected light is coupled into the second waveguide. By depositing a nanotube film on the angled surface, the chip is then used to mode-lock an Erbium doped fiber ring laser with a repetition rate of 26 MHz, and pulse duration of 800 fs. © 2013 AIP Publishing LLC.

Notch and strain rate sensitivity of non-crimp fabric composites

The notch and strain rate sensitivity of non-crimp glass fibre/vinyl-ester laminates subjected to uniaxial tensile loads has been investigated experimentally. Two sets of notch configurations were tested; one where circular holes were drilled and another where fragment simulating projectiles were fired through the plate creating a notch. Experiments were conducted for strain rates ranging from 10-4 s-1 to 102 s-1 using servo hydraulic machines. A significant increase in strength with increasing strain rate was observed for both notched and un-notched specimens. High speed photography revealed changes in failure mode, for certain laminate configurations, as the strain rate increased. The tested laminate configurations showed fairly small notch sensitivity for the whole range of strain rates. © 2008 Elsevier Ltd. All rights reserved.

Effects of pure microcystin-LR on the transcription of immune related genes and heat shock proteins in larval stage of zebrafish (Danio rerio)

Microcystins (MCs) are cyanobacterial toxins in water blooms that have received increasing attention as a public biohazard for human and animal health. Previous studies were mainly focused on the toxic effects on adult fish, rather than juvenile or larvae, and the response of fish immune system were usually neglected. This paper presents the first data of the effects of microcystin-LR (MC-LR) on transcription of several genes essential for early lymphoid development (Rag1, Rag2, Ikaros, GATA1, Lck and TCR alpha) and heat shock proteins (HSP90, HSP70, HSP60, HSP27) in zebrafish larvae. Relative changes of mRNA transcription were analyzed by real time PCR. The transcription of Rag1, Rag2, Ikaros, GATA1, Lck and TCR alpha were up-regulated when following exposure to 800 mu g/L MC-LR, which may indicate that specific lymphocytes differentiation and TCR/lg arrangement are induced to counteract the toxic effects of MC-LR. It was also interesting to note the dramatically increased transcription of HSP90. HSP70, HSP60 and HSP27, which may indicate their important roles as molecular chaperones under oxidative stress. (C) 2009 Elsevier B.V. All rights reserved.

Utility of ITS1-5.8S-ITS2 sequences for species discrimination and phylogenetic inference of two closely related bucephalid digeneans (Digenea : Bucephalidae): Dollfustrema vaneyi and Dollfustrema hefeiensis

The complete internal transcribed spacer 1 (ITS1), 5.8S ribosomal DNA, and ITS2 region of the ribosomal DNA from 60 specimens belonging to two closely related bucephalid digeneans (Dollfustrema vaneyi and Dollfustrema hefeiensis) from different localities, hosts, and microhabitat sites were cloned to examine the level of sequence variation and the taxonomic levels to show utility in species identification and phylogeny estimation. Our data show that these molecular markers can help to discriminate the two species, which are morphologically very close and difficult to separate by classical methods. We found 21 haplotypes defined by 44 polymorphic positions in 38 individuals of D. vaneyi, and 16 haplotypes defined by 43 polymorphic positions in 22 individuals of D. hefeiensis. There is no shared haplotypes between the two species. Haplotype rather than nucleotide diversity is similar between the two species. Phylogenetic analyses reveal two robustly supported clades, one corresponding to D. vaneyi and the other corresponding to D. hefeiensis. However, the population structures between the two species seem to be incongruent and show no geographic and host-specific structure among them, further indicating that the two species may have had a more complex evolutionary history than expected.

Influence of selected Indian immunostimulant herbs against white spot syndrome virus (WSSV) infection in black tiger shrimp, Penaeus monodon with reference to haematological, biochemical and immunological changes

Immunostimulants are the substances, which enhance the non-specific defence mechanism and provide resistance against the invading pathogenic micro-organism. In order to increase the immunity of shrimps against the WSSV, the methanolic extracts of five different herbal medicinal plants like Cyanodon dactylon, Aegle marmelos, Tinospora cordifolia, Picrorhiza kurooa and Eclipta alba were selected and mixed thoroughly in equal proportion. The mixed extract was supplemented with various concentrations viz. 100 (A), 200 (B), 400 (C), and 800 (D) mg kg(-1) through artificial diets individually. The prepared diets (A-D) were fed individually to WSSV free healthy shrimp Penaeus monodon with an average weight of 8.0 +/- 0.5 g for 25 days. Control diet (E), devoid of herbal extract was also fed to shrimps simultaneously. After 25 days of feeding experiment, the shrimps were challenged with WSSV, which were isolated and propagated from the infected crustaceans. The shrimps succumbed to death within 7 days when fed on no herbal immunostimulant diet (E). Among the different concentrations of herbal immunostimulant supplemented diets, the shrimps fed on diet D (800 mg kg(-1)) significantly (P < 0.0001) had more survival (74%) and reduction in the viral load. Also the better performance of haematological, biochemical and immunological parameters was found in the immunostimulant incorporated diets fed shrimps. The present work revealed that the application of herbal immunostimulants will be effective against shrimp viral pathogenesis and they can be recommended for shrimp culture. (c) 2006 Published by Elsevier Ltd.

Response of growth and fatty acid compositions of Nannochloropsis sp to environmental factors under elevated CO2 concentration

Nannochloropsis sp. was grown with different levels of nitrate, phosphate, salinity and temperature with CO2 at 2,800 mu l l(-1). Increased levels of NaNO3 and KH2PO4 raised protein and polyunsaturated fatty acids (PUFAs) contents but decreased carbohydrate, total lipid and total fatty acids (TFA) contents. Nannochloropsis sp. grew well at salinities from 22 to 49 g l(-1), and lowering salinity enhanced TFA and PUFAs contents. TFA contents increased with the increasing temperature but PUFAs contents decreased. The highest eicosapentaenoic acid (EPA, 20:5 omega 3) content based on the dry mass was above 3% under low N (150 mu M NaNO3) or high N (3000 mu M NaNO3) condition. Excessive nitrate, low salinity and temperature are thus favorable factors for improving EPA yields in Nannochloropsis sp.

Femtosecond laser induced breakdown for combustion diagnostics

The focused beam of a 100 fs, 800 nm laser is used to induce a spark in some laminar premixed air-methane flames operating with variable fuel content (equivalence ratio). The analysis of the light escaping from the plasma revealed that the Balmer hydrogen lines, H α and H β, and some molecular origin emissions were the most prominent spectral features, while the CN (B 2Σ +-X 2Σ +) band intensity was found to depend linearly with methane content, suggesting that femtosecond laser induced breakdown spectroscopy can be a useful tool for the in-situ determination and local mapping of fuel content in hydrocarbon-air combustible mixtures. © 2012 American Institute of Physics.

Microcalorimetric investigation of the effect of manganese(II) on the growth of Tetrahymena shanghaiensis S(1)99

The heat output of and the effect of manganese (II) on Tetrahymena shanghaiensis S(1)99 growth metabolism has been determined by means of a LKB-2277 BioActivity monitor. Different concentrations of manganese(II) ions have different effects on the growth of T. shanghaiensis. At low concentrations (0-40 mug/mL) culture growth is promoted, whereas high concentrations (60-800 mug/mL) slow growth. Furthermore, concentrations of 1200 mug/mL or greater stop the growth of this protozooa completely.

Highly efficient photoluminescence of Er2SiO5 films grown by reactive magnetron sputtering method

E2SiO5 thin films were fabricated on Si substrate by reactive magnetron sputtering method with subsequent annealing treatment. The morphology properties of as-deposited films have been studied by scanning electron microscope. The fraction of erbium is estimated to be 23.5 at% based on Rutherford backscattering measurement in as-deposited Er-Si-O film. X-ray diffraction measurement revealed that Er2SiO5 crystalline structure was formed as sample treated at 1100 degrees C for 1 h in O-2 atmosphere. Through proper thermal treatment, the 1.53 mu m Er3+-related emission intensity can be enhanced by a factor of 50 with respect to the sample annealed at 800 degrees C. Analysis of pump-power dependence of Er3+ PL intensity indicated that the upconversion phenomenon could be neglected even under a high photon flux of 10(21) (photons/cm(2)/sec). Temperature-dependent photoluminescence (PL) of Er2SiO5 was studied and showed a weak thermal quenching factor of 2. Highly efficienct photoluminescence of Er2SiO5 films has been demonstrated with Er3+ concentration of 10(22)/cm(3), and it opens a promising way towards future Si-based light source for Si photonics. (C) 2009 Elsevier B.V. All rights reserved.

Ferromagnetic modification of GaN film by Cu+ ions implantation

The structural and magnetic properties of Cu+ ions-implanted GaN films have been reported. Eighty kilo-electron-volt Cu+ ions were implanted into n-type GaN film at room temperature with fluences ranging from 1 x 10(16) to 8 x 10(16) cm(-2) and subsequently annealed at 800 degrees C for 1 h in N-2 ambient. PIXE was employed to determine the Cu-implanted content. The magnetic property was measured by the Quantum Design MPMS SQUID magnetometer. No secondary phases or clusters were detected within the sensitivity of XRD. Raman spectrum measurement showed that the Cu ions incorporated into the crystal lattice positions of GaN through substitution of Ga atoms. Apparent ferromagnetic hysteresis loops measured at 10 K were presented. The experimental result showed that the ferromagnetic signal strongly increased with Cu-implanted fluence from 1 x 10(16) to 8 x 10(16) cm(-2).

Fabrication and Characterization of High Power InGaN Blue-Violet Lasers with an Array Structure

InGaN/GaN multi-quantum-well-structure laser diodes with an array structure are successfully fabricated on sapphire substrates. The laser diode consists of four emitter stripes which share common electrodes on one laser chip. An 800-mu m-long cavity is formed by cleaving the substrate along the < 1 (1) over bar 00 >. orientation using laser scriber. The threshold current and voltage of the laser array diode are 2A and 10.5 V, respectively. A light output peak power of 12W under pulsed current injection at room temperature is achieved. We simulate the electric properties of GaN based laser diode in a co-planar structure and the results show that minimizing the difference of distances between the different ridges and the n-electrode and increasing the electrical conductivity of the n-type GaN are two effective ways to improve the uniformity of carrier distribution in emitter stripes. Two pairs of emitters on a chip are arranged to be located near the two n-electrode pads on the left and right sides, and the four stripe emitters can laser together. The laser diode shows two sharp peaks of light output at 408 and 409 nm above the threshold current. The full widths at half maximum for the parallel and perpendicular far field patterns are 8 degrees and 32 degrees, respectively.

Role of Bi3+ ions for Er3+ ions efficient 1.54 mu m light emission in Er/Bi codoped SiO2 thin film prepared by sol-gel method

Er/Bi codoped SiO2 thin films were prepared by sol-gel method and spin-on technology with subsequent annealing process. The bismuth silicate crystal phase appeared at low annealing temperature while vanished as annealing temperature exceeded 1000 degrees C, characterized by X-ray diffraction, and Rutherford backscattering measurements well explained the structure change of the films, which was due to the decrease of bismuth concentration. Fine structures of the Er3+-related 1.54 mu m light emission (line width less than 7 nm) at room temperature was observed by photoluminescence (PL) measurement. The PL intensity at 1.54 gm reached maximum at 800 degrees C and decreased dramatically at 1000 degrees C. The PL dependent annealing temperature was studied and suggested a clear link with bismuth silicate phase. Excitation spectrum measurements further reveal the role of Bi3+ ions for Er3+ ions near infrared light emission. Through sol-gel method and thermal treatment, Bi3+ ions can provide a perfect environment for Er3+ ion light emission by forming Er-Bi-Si-O complex. Furthermore, energy transfer from Bi3+ ions to Er3+ ions is evidenced and found to be a more efficient way for Er3+ ions near infrared emission. This makes the Bi3+ ions doped material a promising application for future erbium-doped waveguide amplifier and infrared LED

Growth temperature dependences of InN films grown by MOCVD

We investigate the growth temperature dependences of InN films grown by metal organic chemical vapor deposition (MOCVD). Experimental results indicate that growth temperature has a strong effect on the surface morphology, crystalline quality and electrical properties of the InN layer. The increasing growth temperature broadened the v scan's full-width at half-maximum (FWHM) and roughened the surface morphology; whereas the electrical properties improved: As the temperature increased from 460 degrees C to 560 degrees C, room-temperature Hall mobility increased from 98 cm(2)/V s to nearly 800 cm(2)/V s and carrier concentration dropped from 5.29 x 10(19) cm (3) to 0.93 x 10(19) cm (3). The higher growth temperature resulted in more efficient cracking of NH3, which improved Hall mobility and decreased carrier concentration. (C) 2008 Elsevier B.V. All rights reserved.

Continuous-wave operation of GaN based multi-quantum-well laser diode at room temperature

Room-temperature operation of cw GaN based multi-quantum-well laser diodes (LDs) is demonstrated. The LD structure is grown on a sapphire (0001) substrate by metalorganic chemical vapour deposition. A 2.5 mu m x 800 mu m ridge waveguide structure is fabricated. The electrical and optical characteristics of the laser diode under direct current injection at room temperature are investigated. The threshold current and voltage of the LD under cw operation are 110mA and 10.5V, respectively. Thermal induced series resistance decrease and emission wavelength red-shift are observed as the injection current is increased. The full width at half maximum for the parallel and perpendicular far field pattern (FFP) are 12 degrees and 32 degrees, respectively.

Effect of annealing on photoluminescence properties of neon implanted GaN

The effect of thermal annealing on the luminescence properties of neon implanted GaN thin films was studied. Low temperature photoluminescence (PL) measurements were carried out on the samples implanted with different doses ranging from 10(14) to 9 x 10(15) cm(-2) and annealed isochronally at 800 and 900 degrees C. We observed a new peak appearing at 3.44 eV in the low temperative PL spectra of all the implanted samples after annealing at 900 degrees C. This peak has not been observed in the PL spectra of implanted samples annealed at 800 degrees C except for the samples implanted with the highest dose. The intensity of the yellow luminescence (YL) band noticed in the PL spectra measured after annealing was observed to decrease with the increase in dose until it was completely suppressed at a dose of 5 x 10(15) cm(-2). The appearance of a new peak at 3.44 eV and dose dependent suppression of the YL band are attributed to the dissociation of VGaON complexes caused by high energy ion implantation.