Growth temperature dependences of InN films grown by MOCVD

We investigate the growth temperature dependences of InN films grown by metal organic chemical vapor deposition (MOCVD). Experimental results indicate that growth temperature has a strong effect on the surface morphology, crystalline quality and electrical properties of the InN layer. The increasing growth temperature broadened the v scan's full-width at half-maximum (FWHM) and roughened the surface morphology; whereas the electrical properties improved: As the temperature increased from 460 degrees C to 560 degrees C, room-temperature Hall mobility increased from 98 cm(2)/V s to nearly 800 cm(2)/V s and carrier concentration dropped from 5.29 x 10(19) cm (3) to 0.93 x 10(19) cm (3). The higher growth temperature resulted in more efficient cracking of NH3, which improved Hall mobility and decreased carrier concentration. (C) 2008 Elsevier B.V. All rights reserved.

Knowledge Innovation Engineering of Chinese Academy of Sciences YYYJ-070102 National Nature Sciences Foundation of China 60576046 60606002State Key Development Program for Basic Research of China 2006CB604905 513270605This work was supported by the Knowledge Innovation Engineering of Chinese Academy of Sciences (No. YYYJ-070102); the National Nature Sciences Foundation of China (No. 60576046, 60606002); and the State Key Development Program for Basic Research of China (Nos. 2006CB604905 and 513270605).