Structural and Electrical Investigation of C 60 –Graphene Vertical Heterostructures

Graphene, with its unique electronic and structural qualities, has become an important playground for studying adsorption and assembly of various materials including organic molecules. Moreover, organic/graphene vertical structures assembled by van der Waals interaction have potential for multifunctional device applications. Here, we investigate structural and electrical properties of vertical heterostructures composed of C60 thin film on graphene. The assembled film structure of C60 on graphene is investigated using transmission electron microscopy, which reveals a uniform morphology of C60 film on graphene with a grain size as large as 500 nm. The strong epitaxial relations between C60 crystal and graphene lattice directions are found, and van der Waals ab initio calculations support the observed phenomena. Moreover, using C60-graphene heterostructures, we fabricate vertical graphene transistors incorporating n-type organic semiconducting materials with an on/off ratio above 3 × 10(3). Our work demonstrates that graphene can serve as an excellent substrate for assembly of molecules, and attained organic/graphene heterostructures have great potential for electronics applications.

Magnetophotoresistance in Pr 1–x CaxMnO3 Thin Films

In this work, a colossal magnetoresistive (CMR) Pr1−xCaxMnO3 (PCMO) man- ganite thin films and polycrystalline samples were studied with the main focus on the properties of the insulator to metal Mott phase transition. The polycrystalline PCMO samples were fabricated with the solid state reaction method. The polycrystalline sam- ples were further processed into the epitaxial thin films with the pulsed laser deposition method (PLD). The structural and magnetic properties of the samples were systemat- ically investigated and the thin films samples were further investigated with magneto- transport measurement where the thin films response to illumination was also studied. After the successful synthesis of polycrystalline PCMO samples with varying x = between 0.0 - 0.5, the magnetic characterization of the samples showed rich magnetic properties having the signatures of the magnetic phase coexistence of antiferromag- netic (AFM) and ferromagnetic (FM) ordering and cluster glass behaviour. With the increased doping concentration from x = 0.3 to 0.5, the AFM charge-order (CO) phase started to form up being strongest on the sample x = 0.5. This AFM CO phase could be melted with the high external magnetic field at temperatures below Neel’s tempera- ture TN inducing an irreversible first order metamagnetic AFM to FM phase transition. The strength of the AFM CO phase decreased with decreasing Ca concentration and increasing temperature. The polycrystalline PCMO samples with Ca concentrations of 0.3 - 0.5, showing metamagnetic behaviour, were selected for the fabrication of the thin film samples. The films were grown using two different in situ oxygen treatment temperatures at 500 ◦C and 700 ◦C in the PLD system. The films with x = 0.4 and 0.5 showed weaker AFM CO phase with greatly reduced melting fields when compared to polycrystalline samples. Also, the robustness of the AFM CO phase was further decreased in thin films with the lower oxygen treatment temperature of 500 ◦C. The magneto-transport measurements made on the thin films showed that the melting of AFM CO phase was connected to CMR effect where the increasing magnetic field induced an insulator to metal phase transition, which reduces the resistivity of the film around nine orders of magnitude. The use of illumination during the magneto-transport measurements showed a vari- ety of intriguing phenomena including magnetophotoresistance. The illumination had a huge effect to the insulator to metal transition (IMT) reducing the transition magnetic field significantly. Moreover, by magnetically biasing the thin films with the constant external magnetic field, the IMT could be induced by switching on the illumination.

Computational modeling of laser-induced delamination testing of thin films

Thin film adhesion often determines microelectronic device reliability and it is therefore essential to have experimental techniques that accurately and efficiently characterize it. Laser-induced delamination is a novel technique that uses laser-generated stress waves to load thin films at high strain rates and extract the fracture toughness of the film/substrate interface. The effectiveness of the technique in measuring the interface properties of metallic films has been documented in previous studies. The objective of the current effort is to model the effect of residual stresses on the dynamic delamination of thin films. Residual stresses can be high enough to affect the crack advance and the mode mixity of the delimitation event, and must therefore be adequately modeled to make accurate and repeatable predictions of fracture toughness. The equivalent axial force and bending moment generated by the residual stresses are included in a dynamic, nonlinear finite element model of the delaminating film, and the impact of residual stresses on the final extent of the interfacial crack, the relative contribution of shear failure, and the deformed shape of the delaminated film is studied in detail. Another objective of the study is to develop techniques to address issues related to the testing of polymeric films. These type of films adhere well to silicon and the resulting crack advance is often much smaller than for metallic films, making the extraction of the interface fracture toughness more difficult. The use of an inertial layer which enhances the amount of kinetic energy trapped in the film and thus the crack advance is examined. It is determined that the inertial layer does improve the crack advance, although in a relatively limited fashion. The high interface toughness of polymer films often causes the film to fail cohesively when the crack front leaves the weakly bonded region and enters the strong interface. The use of a tapered pre-crack region that provides a more gradual transition to the strong interface is examined. The tapered triangular pre-crack geometry is found to be effective in reducing the stresses induced thereby making it an attractive option. We conclude by studying the impact of modifying the pre-crack geometry to enable the testing of multiple polymer films.

Influence of the metal center on the morphology of coordination compounds thin films

Thin film morphology of tris-(8-hydroxyquinolate) aluminium (III) (Alq3) and bis-(8-hydroxyquinolate) oxovanadium (IV) (VOq2) are compared. Alq3 films deposited onto mica at 300K look almost featureless, but dendrimers or randomly distributed needle-shaped crystallites appear as a consequence of crystallization in time. We show that a possible origin of this process is exposure to solvent vapors. On the other hand, VOq2 films retain their textured morphology as thickness increases because of stabilizing intermolecular interactions between vanadyl groups.

Influence of the metal center on the morphology of coordination compounds thin films

Thin film morphology of tris-(8-hydroxyquinolate) aluminium (III) (Alq3) and bis-(8-hydroxyquinolate) oxovanadium (IV) (VOq2) are compared. Alq3 films deposited onto mica at 300K look almost featureless, but dendrimers or randomly distributed needle-shaped crystallites appear as a consequence of crystallization in time. We show that a possible origin of this process is exposure to solvent vapors. On the other hand, VOq2 films retain their textured morphology as thickness increases because of stabilizing intermolecular interactions between vanadyl groups.

Development and characterisation of solution processed vanadium oxide and transparent metal oxide thin films

Metal oxide thin films are important for modern electronic devices ranging from thin film transistors to photovoltaics and functional optical coatings. Solution processed techniques allow for thin films to be rapidly deposited over a range of surfaces without the extensive processing of comparative vapour or physical deposition methods. The production of thin films of vanadium oxide prepared through dip-coating was developed enabling a greater understanding of the thin film formation. Mechanisms of depositing improved large area uniform coverage on a number of technologically relevant substrates were examined. The fundamental mechanism for polymer-assisted deposition in improving thin film surface smoothness and long range order has been delivered. Different methods were employed for adapting the alkoxide based dip-coating technique to produce a variety of amorphous and crystalline vanadium oxide based thin films. Using a wide range of material, spectroscopic and optical measurement techniques the morphology, structure and optoelectronic properties of the thin films were studied. The formation of pinholes on the surface of the thin films, due to dewetting and spinodal effects, was inhibited using the polymer assisted deposition technique. Uniform thin films with sub 50 nm thicknesses were deposited on a variety of substrates controlled through alterations to the solvent-alkoxide dilution ratios and employing polymer assisted deposition techniques. The effects of polymer assisted deposition altered the crystallized VO thin films from a granular surface structure to a polycrystalline structure composed of high density small in-plane grains. The formation of transparent VO based thin film through Si and Na substrate mediated diffusion highlighted new methods for material formation and doping.

Hall Effect and transient surface photovoltage (SPV) study of Cu3BiS3 thin films

Se presentan las propiedades eléctricas del compuesto Cu3BiS3 depositado por co-evaporación. Este es un nuevo compuesto que puede tener propiedades adecuadas para ser utilizado como capa absorbente en celdas solares. Las muestras fueron caracterizadas a través de medidas de efecto Hall y fotovoltaje superficial transiente (SPV). A través de medidas de efecto Hall se encontró que la concentración de portadores de carga n es del orden de 1016 cm-3 independiente de la relación de masas de Cu/Bi. También se encontró que la movilidad de este compuesto (μ del orden de 4 cm2V -1s-1) varía de acuerdo con los mecanismos de transporte que la gobiernan en dependencia con la temperatura. A partir de las medidas de SPV se encontró alta densidad de defectos superficiales, defectos que son pasivados al superponer una capa buffer sobre el compuesto Cu3BiS3.

Transition from n- to p-type of spray pyrolysis deposited Cu doped ZnO thin films for NO2 sensing

The structural, optical, and gas-sensing properties of spray pyrolysis deposited Cu doped ZnO thin films were investigated. Gas response of the undoped and doped films to N02 (oxidizing) gas shows an increase and decrease in resistance, respectively, indicating p-type conduction in doped samples. The UV-Vis spectra of the films show decrease in the bandgap with increasing Cu concentration in ZnO. The observed p-type conductivity is attributed to the holes generated by incorporated Cu atoms on Zn sites in ZnO thin films. The X-ray diffraction spectra showed that samples are polycrystalline with the hexagonal wurtzite structure and increasing the concentration of Cu caused a decrease in the intensity of the dominant (002) peak. The surface morphology of films was studied by scanning electron microscopy and the presence of Cu was also confirmed by X-ray photoelectron spectroscopy. Seebeck effect measurements were utilized to confirm the p-type conduction of Cu doped ZnO thin films. Copyright © 2009 American Scientific Publishers All rights reserved.

A nanoscratch method for measuring hardness of thin films

Thin solid films were extensively used in the making of solar cells, cutting tools, magnetic recording devices, etc. As a result, the accurate measurement of mechanical properties of the thin films, such as hardness and elastic modulus, was required. The thickness of thin films normally varies from tens of nanometers to several micrometers. It is thus challenging to measure their mechanical properties. In this study, a nanoscratch method was proposed for hardness measurement. A three-dimensional finite element method (3-D FEM) model was developed to validate the nanoscratch method and to understand the substrate effect during nanoscratch. Nanoindentation was also used for comparison. The nanoscratch method was demonstrated to be valuable for measuring hardness of thin solid films.