The status and causes of alien species invasion in China

Data of classification, origin, pathway and environmental impacts of invasive alien micro-organisms, invertebrates, amphibians and reptiles, fish, birds, mammals, weeds, trees, and marine organisms in terrestrial, aquatic and marine ecosystems of China, were analyzed, based on literature retrieval, field survey and consultation. Some 283 invasive alien species were recorded in China, including 19 invasive alien micro-organisms, 18 aquatic plants, 170 terrestrial plants, 25 aquatic invertebrates, 33 terrestrial invertebrates, 3 amphibians and reptiles, 10 fish, and 5 mammals. Of the invasive alien species, 55.1% originated from North and South America, 21.7% from Europe, 9.9% from Asia, 8.1% from Africa and 0.6% from Oceania. Many institutions and individuals in China lack adequate knowledge of ecological and environmental consequences caused by invasive alien species, with some ignorance of the dangerous invasion in the introduction of alien species. For instance, 50.0% of invasive alien plants were intentionally introduced as pasture, feedingstuff, ornamental plants, textile plants, medicinal plants, vegetables, or lawn plants, 25% of alien invasive animals were intentionally introduced for cultivation, ornament, or biological control, In addition, more efforts are being made in the introduction of alien species, and little attention is paid on the management of introduced alien species, which may cause their escape into natural environment and potential threats to the environment. There were also gaps in quarantine system in China. All microorganisms were unintentionally introduced, through timber, seedling, flowerpot, or soil; 76.3% of alien invasive animals invaded through commodity or transportation facility because of the failure of quarantine. Therefore, quarantine measures should be strictly implemented; and meanwhile the intentional introduction of alien species should be strictly managed and a system of risk assessment should be implemented.

Growth and fabrication of AlGaN/GaN HEMT based on Si(111) substrates by MOCVD

AlGaN/GaN high electron mobility transistor (HEMT) hetero-structures were grown on the 2-in Si (1 1 1) substrate using metal-organic chemical vapor deposition (MOCVD). Low-temperature (LT) AlN layers were inserted to relieve the tension stress during the growth of GaN epilayers. The grown AlGaN/GaN HEMT samples exhibited a maximum crack-free area of 8 mm x 5 mm, XRD GaN (0 0 0 2) full-width at half-maximum (FWHM) of 661 arcsec and surface roughness of 0.377 nm. The device with a gate length of 1.4 mu m and a gate width of 60 mu m demonstrated maximum drain current density of 304 mA/mm, transconductance of 124 mS/mm and reverse gate leakage current of 0.76 mu A/mm at the gate voltage of -10 V. (C) 2008 Published by Elsevier Ltd.

1-mm gate periphery AlGaN/AIN/GaN HEMTs on SiC with output power of 9.39 W at 8 GHz

AlGaN/AlN/GaN high electron mobility transistor (HEMT) structures with high mobility GaN channel layer were grown on 50 min diameter semi-insulating (SI) 6H-SiC substrates by metalorganic chemical vapor deposition and large periphery HEMT devices were fabricated and characterized. High two-dimensional electron gas mobility of 2215 cm(2)/V s at room temperature with sheet electron concentration of 1.044 x 10(13)/cm(2) was achieved. The 50 mm diameter HEMT wafer exhibited a low average sheet resistance of 251.0 Omega/square, with the resistance uniformity of 2.02%. Atomic force microscopy measurements revealed a smooth AlGaN surface with a root-mean-square roughness of 0.27 nm for a scan area of 5 mu mi x 5 pm. The 1-mm gate width devices fabricated using the materials demonstrated a very high continuous wave output power of 9.39 W at 8 GHz, with a power added efficiency of 46.2% and power gain of 7.54 dB. A maximum drain current density of 1300 mA/mm, an extrinsic transconductance of 382 mS/mm, a current gain cutoff frequency of 31 GHz and a maximum frequency of oscillation 60 GHz were also achieved in the same devices. (C) 2007 Elsevier Ltd. All rights reserved.

Structural and photoluminescence properties of In-0.9(Ga/Al)(0.1)As self-assembled quantum dots on InP substrate

Self-assembled In0.9Ga0.1As, In0.9Al0.1As, and InAs quantum dots (QD) were fabricated in an InAlAs matrix lattice-matched to an InP substrate by molecular beam epitaxy. Preliminary characterizations were performed using transmission electron microscopy, photoluminescence, and reflection high-energy electron diffraction. Experimental results reveal clear differences in QD formation, size distribution, and luminescence between the InAs and In-0.9(Ga/Al)(0.1)As samples, which show the potential of introducing ternary compositions to adjust the structural and optical properties of QDs on an InP substrate. (C) 2000 American Institute of Physics. [S0021-8979(00)10213-0].

Optical characterization of high-purity cubic GaN grown on GaAs (001) substrate by metalorganic chemical vapor deposition

The optical properties of cubic GaN films have been investigated in the temperature range of 10-300 K. Five peaks were observed at 10 K. From the dependence of photoluminescence emissions on the temperature and excitation intensity, we have assigned two of the five peaks (2.926 and 2.821 eV) to donor-acceptor pair (DAP) transitions. Furthermore, these two peaks were found to be related to a common shallow donor involved in the peak position previously reported at 3.150 eV. The intensities of DAP transitions were much weaker than that of excitonic emission even at low temperature, indicating a relatively high purity of our samples. (C) 2000 American Institute of Physics. [S0003-6951(00)00921-9].

Effects of 9-cyanoanthracene and anthracene adsorption on the photoluminescence of porous silicon

The photoluminescence of porous silicon can be modified sensitively by surface adsorption of different kinds of molecules. A quite different effects of 9-cyanoanthracene and anthracene adsorption on the photoluminescence of porous silicon were observed. The adsorption of 9-cyanoanthracene induced the photoluminescence enhancement, while anthracene adsorption resulted in photoluminescent quenching. An explanation of the interaction of adsorbates with surface defect sites of porous silicon was suggested and discussed. (C) 1998 Elsevier Science S.A.

Low threshold current density, low resistance oxide-confined VCSEL fabricated by a dielectric-free approach

We present the fabrication process and experimental results of 850-nm oxide-confined vertical cavity surface emitting lasers (VCSELs) fabricated by using dielectric-free approach. The threshold current of 0.4 mA, which corresponds to the threshold current density of 0.5 kA/cm(2), differential resistance of 76 Omega, and maximum output power of more than 5 mW are achieved for the dielectric-free VCSEL with a square oxide aperture size of 9 mu m at room temperature (RT). L-I-V characteristics of the dielectric-free VCSEL are compared with those of conventional VCSEL with the similar aperture size, which indicates the way to realize low-cost, low-power consumption VCSELs with extremely simple process. Preliminary study of the temperature-dependent L-I characteristics and modulation response of the dielectric-free VCSEL are also presented.

Fabrication of a novel silica PLC hybrid integrated triplexer

A new-style silica planar lightwave circuit (PLC) hybrid integrated triplexer, which can demultiplex 1490-nm download data and 1550-nm download analog signals, as well as transmit 1310-nm upload data, is presented. It combines SiO2 arrayed waveguide gratings (AWGs) with integrated photodetectors (PDs) and a high performance laser diode (LD). The SiO2 AWGs realize the three-wavelength coarse wavelength-division multiplexing (CWDM). The crosstalk is less than 40 dB between the 1490- and 1550-nm channels, and less than 45 dB between 1310- and 1490- or 1550-nm channels. For the static performances of the integrated triplexer, its upload output power is 0.4 mW, and the download output photo-generated current is 76 A. In the small-signal measurement, the upstream 3-dB bandwidth of the triplexer is 4 GHz, while the downstream 3-dB bandwidths of both the analog and digital sections reach 1.9 GHz.

Highly efficient and stable organic light-emitting diodes employing MoO3-doped perylene-3, 4, 9, 10-tetracarboxylic dianhydride as hole injection layer

We report highly efficient and stable organic light-emitting diodes (OLEDs) with MoO3-doped perylene-3, 4, 9, 10-tetracarboxylic dianhydride (PTCDA) as hole injection layer (HIL). A green OLED with structure of ITO/20 wt% MoO3: PTCDA/NPB/Alq(3)/LiF/Al shows a long lifetime of 1012 h at the initial luminance of 2000 cd/m(2), which is 1.3 times more stable than that of the device with MoO3 as HIL. The current efficiency of 4.7 cd/A and power efficiency of 3.7 lm/W at about 100 cd/m(2) have been obtained. The charge transfer complex between PTCDA and MoO3 plays a decisive role in improving the performance of OLEDs.

基于小规模尾字特征的中文命名实体识别研究

本文针对难度最大的两类命名实体(地名和机构名)在条件随机场框架下首次引入了小规模的常用尾字特征．实验表明，该特征与词类特征具有一定的互补性，联合使用可以以较小的训练代价显著提高专有名词的识别性能，特别是机构名的识别精度．该系统在我国863简体命名实体识别评测语料上专名(人名、地名和机构名)总体F1值达踞．76％，超过当年最佳系统8．63个百分点．在SIGHAN 2006命名实体识别语料上的结果也居于前列．

基于编译器的瞬时故障容错技术研究与实现

随着计算机芯片的速度不断提升，器件的门限电压越来越低，因此单粒子翻转的瞬时故障越来越容易发生。特别是在太空环境中的计算机系统，在宇宙射线的影响下，瞬时故障更为频繁，系统可靠性面临更突出的考验。 为了提高计算机系统的可靠性，一般有硬件冗余容错和软件冗余容错两种方法。相对硬件容错而言，软件容错的优点是价格便宜，性价比高，配置灵活等，缺点是会带来额外的时间和空间开销，而且给程序员带来编写额外的容错代码的工作量。近来出现了一些基于编译的软件容错方法，可在编译的过程中自动加入冗余容错逻辑，但是这类编译容错方法仍然会带来显著的时间空间开销。如何在保持容错能力的同时尽量降低时空开销，是有待继续研究的问题。 本文在编译容错方向上进行了进一步研究和实现，提出利用源代码中的变量信息对冗余容错逻辑进行了剪裁，在保证容错能力的同时降低了时空开销，对内存和寄存器中的数据进行保护。具体内容有： 1. 提出了一个容错编译环境SCC的设计蓝图，构建了一个容错编译工具的远 景目标。 2. 提出了一种指令级的编译容错检测方法VarBIFT ，提供检测瞬时故障的能力。平均只利用0.0069倍的时间损耗和0.3620倍的空间损耗就将发生瞬时故障时，程序正确执行和检测到故障的概率总和平均从39.1%提升到76.9%， 3. 提出了一种指令级的编译容错恢复方法VarRIFT ，提供从瞬时故障中恢复正确数据的能力。平均只增加0.043倍的时间损耗和0.69倍的空间损耗就将发生瞬时故障时，程序仍然正确执行的概率平均从44.8%提升到了78.7%。 4. 基于开源编译器LCC，实现了上述两个编译容错方法VarBIFT 和VarRIFT 。在容错方法的实现中只修改了跟具体CPU指令相独立的中间逻辑，所以这两个实现能够方便得移植到SPARC、MIPS等其他CPU架构上。 5. 开发了一个故障注入工具，并用它测试了上述两个编译容错方法VarBIFT和VarRIFT 的容错能力。

施肥措施对黄土旱塬区小麦产量和土壤有机碳积累的影响

利用中国科学院长武农田生态试验站的长期田间试验(1984年2~007年),研究了小麦产量,耕层有机碳变化,评价了土壤管理和气候因素对土壤有机碳(Soil organic C,SOC)变化的影响。研究涉及6个处理:休闲地(F);不施肥(CK);有机肥(M);氮肥(N);氮、磷肥(NP)和氮、磷、有机肥(NPM)处理。结果表明,施肥可以显著提高作物产量和SOC积累,CK、M、N、NP、NPM处理平均产量依次为1.5、2.6、2.0、3.3、4.0 t/hm2,2007年F、CK、M、N、NP、NPM处理0—20 cm土层SOC积累量依次为-1.09、0.76、8.59、1.02、3.42和9.5 t/hm2。作物产量与SOC含量呈显著的正相关关系(r=0.80),有机碳输入量与SOC含量相关性更好(r=0.97),外源有机碳的输入也是提高SOC的重要措施。施肥措施对作物固碳和SOC影响存在显著(P<0.05)差异。土壤固碳速率(Y)与SOC输入量(X)符合线性方程Y=0.231X-0.0813(r=0.98)。施肥可以提高黄土高原半干旱地区土壤生产力和SOC的积累,且无机肥和有机肥配施效果最佳。

黄土丘陵区小流域综合治理生态经济过程分析——以宁夏隆德县李太平小流域为例

从生态经济系统分析角度出发,对小流域生态经济结构及其演变进行分析,以期评价小流域生态经济效益。对比分析了小流域生态经济系统土地利用结构及其适宜性、产业结构、消耗结构和饲料生产平衡,利用线性模型对土地利用结构进行了优化模拟,采用描述生态系统稳定性的多样性指数描述流域经济系统稳定性,并用静态和动态模型对治理经济效果进行评价。流域农、林、牧用地比例由1990年的6．2:2．0:1．0变为2003年的1．9:1．4:1．0;农业产值所占比重由79．6％下降为54．8％;林业、牧业、副业产值比例分别由9．6％、9．6％、1．1％上升为22．7％、 15．1％、7．4％。收入多样性指数呈增加趋势,消耗结构趋向合理,饲料供需平衡,经济评价中各指标均显示经济效益显著,表明生态经济结构明显有利于生态经济系统的进展演变,流域生态经济结构趋于稳定,生态经济效益显著。