Raman scattering from In1-x-yGaxAlyAs quaternary alloys

Raman scattering studies were reported of In1-x-yGaxAlyAs/InP lattice matched quaternary alloys. The quaternary alloys a.ere grown on (100) oriented InP substrates by MBE method. The composition and intensity dependence of optical phonon mode frequencies show that the quaternary alloys exhibit three-mode behavior, i.e. InAs-like, GaAs-like and AlAs-like modes. Polarization analysis of the Raman spectra shows that the LO phonon modes are Raman active in the depolarized configuration and Raman inactive in the polarized configuration. TO phonon modes were also observed due to disorder effects, resulting in the asymmetrical shapes of the Raman peaks of the optical phonons.

Alignment of threading dislocations in the In0.3Ga0.7As/GaAs superlattice

Threading dislocations in the III-V heterostructure system are investigated based on the observation of dislocations in the In0.3Ga0.7As/GaAs superlattice with transmission electron microscope. To explain both the presence and orientation of threading dislocations in the epilayers an alloy effect on the dislocation lines in ternary III-V compounds is proposed, and, in addition, a pseudo-stable state for threading dislocations in binary compounds is recognized. (C) 1998 Elsevier Science B.V. All rights reserved.

InAs quantum dots in InAlAs matrix on (001)InP substrates grown by molecular beam epitaxy

InAs quantum dots grown on InAlAs lattice-matched to (0 0 1) InP substrates by molecular beam epitaxy are investigated by double-crystal X-ray diffraction, photoluminescence and transmission electron microscopy. The growth process is found to follow the Stranski-Krastanow growth mode. The islands formation is confirmed by the TEM measurements. Strong radiative recombination from the quantum dots and the wetting layer is observed, with room temperature PL emission in the 1.2-1.7 mu m region, demonstrating the potential of the InAs/InAlAs QDs for optoelectronic device applications. (C) 1998 Elsevier Science B.V. All rights reserved.

Dependence of photoluminescence induced by carbon contamination on GeSi structure

We studied the dependence of photoluminescence induced by carbon contamination on the Ge/GeSi structure. It is found that a carbon and silicon defect complex may be formed in a special structure by opening the in situ high-energy electron diffraction test during growth. There is an important difference in the dependence of photoluminescence on the temperature between the defect complex in our samples and in bulk Si. where the impurity-active center is generated by high-energy electron (about several MeV) irradiation. The quenching temperature of the photoluminescence from the impurity-active center is higher in our Ge/GeSi structure than in bulk Si. The defect complex may serve as an impurity-active center for a possible application in making Si-based light-emitting diodes whose wavelength is around 1.3 mu m in the window of optical communication. (C) 1998 Elsevier Science B.V. All rights reserved.

Raman scattering study on vibrational modes in Ga1-xMnxN prepared by Mn-ion implantation

Raman scattering measurements have been carried out on ferromagnetic semiconductor Ga1-xMnxN prepared by Mn-ion implantation and post annealing. The Raman results obtained from the annealed and un-annealed Ga1-xMnxN demonstrate that crystalline quality has been improved in Ga1-xMnxN after annealing. Some new vibrational modes in addition to GaN-like modes are found in the Raman spectra measured from the Ga1-xMnxN where the GaN-like modes are found to be shifted in the higher frequency side than those measured from the bulk GaN. A new vibrational mode observed is assigned to MnN-like mode. Other new phonon modes observed are assigned to disorder-activated modes and Mn-related vibrational modes caused by Mn-ion implantation and post-annealing. (c) 2006 Elsevier Ltd. All rights reserved.

Temperature and power-density-dependent inter-shell energy states in InAs/GaAs quantum dots

We have investigated the evolution of exciton state filling in InAs/GaAs quantum dot (QD) structures as a function of the excitation power density by using rnicro-photoluminescence spectroscopy at different temperatures. In addition to the emission bands of exciton recombination corresponding to the atom-like S, P and D, etc. shells of QDs, it was observed that some extra states V between the S and P shells, and D' between the P and D shells appear in the spectra with increasing number of excitons occupying the QDs at a certain temperature. The emergence of these inter-shell excitonic levels is power density and temperature dependent, which is an experimental demonstration of strong exciton-exciton exchange interaction, state hybridization, and coupling of a multi-exciton system in QDs. (c) 2006 Elsevier B.V. All rights reserved.

a real-time path planning approach without the computation of cspace obstacles

An important concept proposed in the early stage of robot path planning field is the shrinking of the robot to a point and meanwhile expanding of the obstacles in the workspace as a set of new obstacles. The resulting grown obstacles are called the Configuration Space (Cspace) obstacles. The find-path problem is then transformed into that of finding a collision free path for a point robot among the Cspace obstacles. However, the research experiences obtained so far have shown that the calculation of the Cspace obstacles is very hard work when the following situations occur: 1. both the robot and obstacles are not polygons and 2. the robot is allowed to rotate. This situation is even worse when the robot and obstacles are three dimensional (3D) objects with various shapes. Obviously a direct path planning approach without the calculation of the Cspace obstacles is strongly needed. This paper presents such a new real-time robot path planning approach which, to the best of our knowledge, is the first one in the robotic community. The fundamental ideas are the utilization of inequality and optimization technique. Simulation results have been presented to show its merits.

空间环境下成像效果的仿真研究

仿真图像生成技术是计算机图形学研究的一个重要内容，在各个方面都有广泛的应用。在航空航天领域，地面的应用处理常常依赖空间探测器拍摄结果，由于实验成本的昂贵，对探测器拍摄结果进行仿真就显得尤其重要。本文主要关注在宇宙空间这一特殊场景下的仿真图像生成方法。针对在空间环境的特点，在分析星空环境下相机成像机理的基础上，从相机光学系统、光感受器工作特性、光圈衍射、电子线路噪声、空间背景等各个方面对星空环境下的成像系统进行了建模，设计了空间环境下成像效果的仿真方案，提出了对各种成像效果、背景星图、CCD噪声的模拟算法。其中基于OpenGL的方法以简单高效的针孔相机模型为基础，结合后期的图像处理，可以在较短的时间内生成仿真结果图像，并能反映拍摄场景下的主要成像效果，在仿真的实时性和结果的真实性之间取得了平衡，而基于物理的渲染方法则精确模拟了成像过程中光线传播的物理过程，能够很好的体现成像系统的光学特征，虽然耗时较长，但是可以生成真实感很强的结果。 基于这些模型和算法，本文还设计并实现了空间环境下的成像仿真系统。用户可以通过该系统来配置空间探测器的任务流程、拍摄参数，来模拟探测器对宇宙目标及背景星空的拍摄结果。由于针对不同拍摄场景设计的各种仿真实验结果均证实了算法和模型的有效性，因此该仿真系统的结果可以作为地面后期应用处理的输入，而本文的研究内容对空间环境中的数据压缩、地面恢复、天文定位、恒星识别等都有重要意义。

受迫内流气体发生的理论及实验关联

受迫内流气体发生的理论及实验关联郭开华，陈阵，舒碧芬，蒙宗信（中国科学院广州能源研究所热泵及空调制冷技术研究中心广州510070）关键词气体发生，多相流，混合物，传热传质1引言在吸收式能量转换系统（如吸收人热泵、制冷机、吸收压缩复合式热泵、卡林纳动力...

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在综合分析米脂县农地承载力系统结构、关系的基础上,以1998年为起始年建立系统动力学模型,根据米脂县社会经济发展现状及未来规划,设定了3种不同的方案和3种营养标准,模拟了米脂县2008-2028年农地人口承载力趋势,通过各方案比较,得出了较优的方案,最后提出了提高该地区农地承载力的政策建议。