THEORETICAL INVESTIGATION OF THE DYNAMIC PROCESS OF THE ILLUMINATION OF GAAS

The dynamic process of light illumination of GaAs is studied numerically in this paper to understand the photoquenching characteristics of the material. This peculiar behavior of GaAs is usally ascribed to the existence of EL2 states and their photodriven metastable states. To understand the conductivity quenching, we have introduced nonlinear terms describing the recombination of the nonequilibrium free electrons and holes into the calculation. Though some photoquenching such as photocapacitance, infrared absorption, and electron-paramagnetic-resonance quenching can be explained qualitatively by only considering the internal transfer between the EL2 state and its metastability, it is essential to take the recombination into consideration for a clear understanding of the photoquenching process. The numerical results and approximate analytical approach are presented in this paper for the first time to our knowledge. The calculation gives quite a reasonable explanation for n-type semiconducting GaAs to have infrared absorption quenching while lacking photoconductance quenching. Also, the calculation results have allowed us to interpret the enhanced photoconductance phenomenon following the conductance quenching in typical semi-insulating GaAs and have shown the expected thermal recovery temperature of about 120 K. The numerical results are in agreement with the reported experiments and have diminished some ambiguities in previous works.

MBE of GaN with DC-plasma source for nitrogen activation

In this paper we report on the first results of epitaxial growth of GaN layers on GaAs (100) substrates using a modified MBE system, equipped with a DC-plasma source for nitrogen activation in configuration of reverse magnetron at ultra-low pressures.

Growth of GaN layers on GaAs and GaP (111) and (001) substrates by molecular beam epitaxy

Films of GaN have been grown using a modified MBE technique in which the active nitrogen is supplied from an RF plasma source. Wurtzite films grown on (001) oriented GaAs substrates show highly defective, ordered polycrystalline growth with a columnar structure, the (0001) planes of the layers being parallel to the (001) planes of the GaAs substrate. Films grown using a coincident As flux, however, have a single crystal zinc-blende growth mode. They have better structural and optical properties. To improve the properties of the wurtzite films we have studied the growth of such films on (111) oriented GaAs and GaP substrates. The improved structural properties of such films, assessed using X-ray and TEM method, correlate with better low-temperature FL.

Donor acceptor pair in molecular beam epitaxy grown GaN

We have recently found evidence of new donor acceptor pair (DAP) luminescence in molecular beam epitaxy (MBE) grown films. A variety of nominally undoped samples have been studied by photoluminescence (PL) over a temperature range of 5-300 K. The samples show intensive luminescence al energies of 3.404-3.413 eV varying with different sample at 5 K, as well as a fairly strong (DX)-X-0 line at low temperature. We attribute the Line at 3.404-3.413 eV to DAP recombination which is over 0.1 eV different from the well known DAP caused by ME-doping in GaN. The DAP line shows fine structure. it even predominates in one particular sample. The peak position shifts to higher energy with temperature increasing from 5 up to 70 K, and as the excitation laser intensity increases. The data are consistent with DAP luminescence involving an acceptor level of about 90 meV (presumably carbon) above the valence band edge in GaN. It is much shallower than the acceptor level of 250 meV produced by the p-type dopant Mg which is commonly used at present. (C) 1997 Elsevier Science S.A.

BACKGATING AND LIGHT SENSITIVITY IN GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS

Three different types of GaAs metal-semiconductor field effect transistors (MESFET) by employing ion implantation, molecular beam epitaxy (MBE) and low-temperature MBE (LT MBE) techniques respectively were fabricated and studied in detail. The backgating (sidegating) measurement in the dark and in the light were carried out. For the LT MBE-GaAs buffered MESFETs, the output resistance R(d) and the peak transconductance g(m) were measured to be above 50 k Omega and 140 mS/mm, respectively, and the backgating and light sensitivity were eliminated. A theoretical model describing the light sensitivity in these kinds of devices is given. and good agreement with experimental data is reached.

40Gb/s甚短距离并行光传输信号格式转换模块实现

根据OIF-VSR5-01.0的CWDM协议,对40 Gb/s甚短距离(VSR)并行光传输电信号转换实现原理和方法进行了研究,在高速的可编程逻辑器件FPGA(field programmable gate array)上,使用硬件描述语言,完成了对时钟数据恢复、信道去斜移、64 b/66 b转换、帧对准和扰码与解扰等功能模块的设计,实现了SFI-5接口与OIF-VSR5-01.0接口电信号格式的相互转换,建立了符合4信道CWDM协议的IP核.

基于STM-64的甚短距离并行光传输系统

研究了STM-64数据帧的转换映射技术,利用垂直腔面发射激光器(VCSEL)列阵光源和PIN列阵探测器成功研制出10 Gb/s的甚短距离12信道SDH并行光传输系统,该系统结构紧凑,具有检错和纠错功能。跟传统的10 Gb/s串行光传输系统相比,本系统降低了对单路器件传输性能的要求。经SDH传输测试仪测试,系统能实现无误传输。

Single ridge waveguide electroabsorption modulated DFB laser for 2.5Gb/s transmission

In this paper we proposed a single ridge waveguide electroabsorption modulated distributed feedback laser (EML) for long-haul high-speed optical fiber communication system. This EML was successfully fabricated by two step metal organic vapor phase epitaxy (MOVPE) including selective area growth (SAG) and helium partially implantation. No obvious changes of the threshold current (< 0.2 mA), extinction ratio (< 0.1 dB), output power (< 0.2 dBm) and isolation resistance were achieved in the preliminary aging test. With 2.5 Gb/s NRZ modulation, no power penalty was observed after the optical signal was transmitted through 280 Km normal single mode fiber.

Intelligent control of avalanched photodiode to get optimal state

To improve the sensitivity of our laser radar system, we provided a set of control method for APDs (Avalanched Photodiodes) based on single-chip computer together with the circuits dealing with noise and temperature. It adjusts the voltages intelligently and maintains the APD's optimal working status.

双氰胺对设施菜地土壤-植物系统氮运移的影响

在设施菜地条件下，研究了配施双氰胺对土壤-植物系统NO3--N 迁移累积和作物产量的影响。结果表明，配施 2 %、5 % 和10 % 浓度的双氰胺均可以有效降低设施菜地耕层土壤 NO3--N 的淋溶和累积，推迟土壤 NO3--N 含量高峰出现时间15 d 以上。而且随着双氰胺配施浓度的升高，其硝化抑制效果越明显。 配施不同浓度的双氰胺可不同程度降低砂壤质潮棕壤 40 - 120 cm 土层土壤 NO3--N 的累积，其中配施 10 % 双氰胺对控制 NO3--N 在深层土壤中的累积和淋溶效果最显著，对减少设施菜地土壤和地下水 NO3--N 污染的环境治理有较高的参考价值。在试验期间未观测到粘壤质潮棕壤试验样地中各施肥处理NO3--N 在40 cm 以下的深层土壤中的累积和淋溶。 配施不同浓度的双氰胺调整了土壤硝态氮供应量和供应时间，不同程度的降低了收获期苦苣可食部分硝酸盐的含量，部分施肥处理已达到极显著水平(P<0.01)。各试验处理苦苣可食部分硝酸盐含量均低于 3000 mg•kg-1，达到国家叶菜类安全食品标准 (GB 19338-2003)，且部分处理已低于1000 mg•kg-1。同时，添加双氰胺可明显降低苦苣可食部分亚硝酸盐的含量，使苦苣亚硝酸盐含量低于 2 mg•kg-1，达到国家绿色食品绿叶类蔬菜卫生标准 (NY/T 743-2003)，但不同双氰胺配施浓度之间差异不明显。此外，配施双氰胺在一定程度上提高了作物产量，但在增产效果与双氰胺的配施量不成正比。

无粪便生活污水SMBR快速处理技术研究

针对传统生活污水水质相对复杂，处理与回用较为困难的问题，提出在搜集时排除粪便水，选择厨房、洗漱、洗澡、洗涤的污水，利用浸没式膜生物反应器（SMBR）技术实现上述类型污水的快速处理，再生水回用于冲厕。研究结果表明：此种污水COD、NH4+-N和TP含量低，具有良好的可生化性，可大大降低处理周期与处理成本。本技术优化的主要工艺条件为：污泥浓度范围7000～9100 mg•L-1，污泥龄40～55d，HRT为80min，气水比为12～15:1，处理效果好，微滤膜对稳定出水水质起到重要作用。在此条件下，COD、NH4-N,TP去除率分别为85.47%, 53.11%,44.86%。出水COD在20～30mg•L-1之间，BOD5为1～5 mg•L-1；NH4+-N为2～3.08 mg•L-1，TP为0.59～0.9mg•L-1 mg•L-1，LAS为0.41～0.67mg•L-1，去除效果较好，再生水水质可达到《城市污水再生利用 城市杂用水水质》(GB/T 18920- 2002)标准。本文研究不足之处主要是由于文章所述污水搜集难度较高，实验用水为模拟废水，在一定程度上与实际污水有差距。 本研究结果可为生活污水的处理与回用提供一种新的思路与研究基础。