MBE of GaN with DC-plasma source for nitrogen activation
| Data(s) |
1997
|
|---|---|
| Resumo |
In this paper we report on the first results of epitaxial growth of GaN layers on GaAs (100) substrates using a modified MBE system, equipped with a DC-plasma source for nitrogen activation in configuration of reverse magnetron at ultra-low pressures. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Novikov SV; Kipshidze GD; Lebedev VB; Sharonova LV; Shik AY; Tretyakov VV; Jmerik VN; Kuznetsov VM; Gurevich AM; Zinovev NN; Foxon CT; Cheng TS; Ren GB .MBE of GaN with DC-plasma source for nitrogen activation ,COMPOUND SEMICONDUCTORS 1996,1997,(155):255-258 |
| Palavras-Chave | #半导体材料 #NITRIDES #GROWTH |
| Tipo |
期刊论文 |
