黄河中游地区年径流对土地利用变化时空响应分析

以黄河中游河龙区间为研究区,以水土流失综合治理及生态环境建设导致的土地利用/覆被变化为背景,采用非参数统计法,基于区内38个水文站20世纪50年代至2000年水文数据,分析流域年径流对土地利用/覆被变化响应的时空变异特征,估算影响因素贡献率。结果表明:其中29条流域年径流量呈显著减少趋势,变率为0.17~2.61 mm/a;28条流域年径流量具有显著跃变时间,无定河流域各水文站跃变时间多在1970—1973年间,其余则多为1978—1985年,最晚为1994年;在5%、50%和95%的发生频率上,跃变前后时段年径流量减少幅度以30%~60%普遍,最大分别为73.2%、63.5%和69.7%;河龙区间整体呈显著减少趋势,变率为0.79 mm/a,跃变时间发生在1979年,3个频率上的减少幅度分别为46.5%、42.4%和24.1%。估算的11条流域中有9条土地利用/覆被变化等人类活动对流域径流减少影响程度超过50%。水土保持措施面积的增加,尤其淤地坝等水利水保工程措施的持续修建,对区域地表径流变化具有明显影响。

A NEW METHOD FOR DETECTING SUBTLE CHANGES IN SI-H BONDS OF A-SI-H

A new method developed for detecting possible subtle changes in Si-H bonds of a-Si:H after light soaking is described in detail. The method promises a sensitivity orders of magnitude higher than that reached by the usual IR spectrometer. Some preliminary results on phosphorus doped a-Si:H are given.

PHOTOINDUCED CHANGES OF HYDROGEN-BONDING IN SEMIINSULATING IRON-DOPED INDIUM-PHOSPHIDE

After illumination with 1-1.3 eV photons during cooling-down, metastable PH modes are observed by IR absorption at 5 K in semi-insulating InP:Fe. They correlate with the photo-injection of holes, but not with a change of the charge state of the K-related centres present at equilibrium. They are explained by a change of the bonding of H, induced by hole trapping, from IR-inactive centres to PH-containing centres, stable only below 80 K. One metastable centre has well-defined geometrical parameters and the other one could be located in a region near from the interface with (Fe,P) precipitates.

Structural and optical changes in GaAs/InAs/GaAs structure induced by thermal annealing

Self-organized InAs quantum; dots sheets are grown on GaAs(100) substrate and tapped by 80nm GaAs layer with molecular beam epitaxy. Samples were annealed and characterized with Raman spectra, transmission electron microscopy (TEM) and photolumincscence (PL). The Raman spectra indicates arsenic clusters in the GaAs capping layer. The TEM analysis revealed the relaxation of strain in some InAs islands with the introduction of the network of 90 dislocations. In addition, the structural changes also lead to the changes of the PL spectra from me InAs islands. Their correlation was discussed, Our results suggest:est that annealing may be used to intentionally modify me properties of self-organized InAs islands on GaAs.