Leakage current, ferroelectric and structural properties in Pb(1-x)Ba(x)TiO(3) thin films prepared by chemical route

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Structure and Properties of Barium Bismuth Titanate Prepared by Mechanochemical Synthesis

Bi4Ti4O15 [BBT], a member of Aurivillius bismuth-based layer-structure perovskites, was prepared from stoichiometric amounts of BaTiO3 [BT] and Bi4Ti3O12 [BIT] obtained via mechanochemical synthesis. Mechanochemical synthesis was performed in air atmosphere in a planetary ball mill. BBT ceramics were sintered at 1100C for 4 h without pre-calcination step within heating rate 10C/min. The formation of phase and crystal structure of BT, BIT and BBT were approved using X-ray analysis. The morphology of obtained powders and microstructure were exhamined using scanning electron microscopy. The electrical properties of sintered samples were carried out.

Photoluminescence property of Ba(Zr0.25Ti0.75)O-3 powders prepared by solid state reaction and polymeric precursor method

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Investigation of Ferroelectric Layered Perovskite Barium Bismuth Tantalate Prepared by Solid-State Reaction

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Study of Structure and Properties of Bi4Ti3O12 Prepared by Mechanochemical Syntheses

Bi4Ti3O12 powder was synthesized from bismuth oxide and titanium oxide. Mixture of oxides was milled in zirconium oxide jar in the planetary ball-mill during 1, 3 and 6 h. Extended time of milling directed to formation of higher amount of titanates perovskite phase. Bi4Ti3O12 was formed between 1 and 3 h of milling time. The phase formation of Bi4Ti3O12, crystal structure and powder particle size were followed by XRD, Raman spectroscopy and SEM analysis. After milling for various times the powders were compacted by pressing and isothermal sintering. Sample milled for 3 h and subsequently sintered at 1000C for 24 h exhibit a hysteresis loop, confirming that the synthesized material possesses ferroelectric properties. All results affect that the structure Bi4Ti3O12 is strongly dependent on the milling time.

Strain behavior of lanthanum modified BiFeO3 thin films prepared via soft chemical method

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Lubricating coating prepared by PIIID on a forming tool

In this work, the performance of a-C: H films produced by the hybrid Plasma Immersion Ion Implantation and Deposition technique as lubricating layers for a steel forming tool has been investigated. Hardened steel (AISI M2, 64 HRC) plates coated with a commercial TiN layer were used as substrates and the films were deposited in a vacuum chamber fitted with two parallel-plate electrodes. The discharges were generated in atmospheres composed of 91% C2H2 and 9% Ar by the application of radiofrequency power (13.56 MHz, 100 W) to the upper electrode while the lower one, also used as the sample holder, was biased with high voltage negative pulses (3.6 kV, 30 mu s, 300 Hz). A deposition time of 840 s was used. The effects of the gas pressure, p, on thickness, molecular structure, wettability, surface morphology and topography, hardness and friction coefficient of the films lwere investigated. Film thickness increased from 0.3 to 0.5 mu m when p was increased from 2.7 to 16.5 Pa. Generally, the films were slightly hydrophilic, with contact angles of around 84 degrees, and the deposition decreased the roughness of the steel. A polymer-like structure was detected in high pressure depositions and an amorphous carbon structure derived from the low pressure procedures. Hardness decreased from 8.2 to 7.0 GPa with increasing p. Improvement in tribological performance was indicated by the fall in the friction coefficient from 0.5 to 0.2 as the deposition pressure was reduced. Operating at the latter value (of mu) would lead to a significant reduction in wear and hence to significant economy in diverse industrial applications.

Size, electrophoretic mobility, and ion dissociation of vesicles prepared with synthetic amphiphiles

Vesicles prepared with synthetic amphiphiles (dioctadecyldimethylammonium bromide and chloride, dihexadecyl phosphate and its sodium salt) were obtained by sonication, ethanol injections, and chloroform injections. The hydrodynamic diameter of vesicles (Dh), estimated from the diffusivity measured by quasielastic light scattering, ranged from 230 to 3000 Å. The electrophoretic mobility (Um) was measured by free-flow electrophoresis. The zeta potential (ζ) and the degree of counterion dissociation (α) of the vesicles were calculated from Um and conductivity data, α decreased with increasing Dh of the vesicles, probably due to the decreasing headgroup area and the increasing counterion association needed to relax the surface electrostatic potential. The electrophoretic mobility was also calculated (Uc) according to an impenetrable, nonconducting sphere model with a spherically symmetric charge distribution approximation. Within the limits of the experimental error(s) of the (different) methods employed and the assumptions made in the calculations, the fact that the Um/Uc ratio ranged from 1.3 to 7.5 was considered to be a good agreement between the calculated and the experimental values. © 1990 American Chemical Society.

Pore size distribution of unsupported SnO2 membranes prepared by sol-gel process - Code: EP21

Unsupported SnO2 membranes were prepared by sol-gel process and characterized by N2 adsorption-desorption isotherms and X-ray diffraction. Results show that the texture of dried samples does not change appreciably with the concentration of electrolyte. All of the pore size range used in ultrafiltration process was screened using sintering temperature between 300 and 700°C. © 1994 Kluwer Academic Publishers.

Phase analysis of seeded and doped PbMg1/3Nb2/3O3 prepared by organic solution of citrates

PbMg1/3Nb2/3O3 (PMN) prepared by organic solution of citrates was analyzed by the Rietveld method to determine the influence of seeds and dopants on the perovskite and pyrochlore phase formation. It was observed that pyrochlore phase formation increases with an increase in calcination time when no additives are included during the preparation. It was also observed that a greater amount of perovskite phase appeared in doped or seeded samples. The fraction of perovskite phase increased from 88 mol % in pure sample to ∼95 mol % in doped and seeded samples calcined at 800°C for 1 h. It is clear that the addition of dopants or seeds during PMN preparation can enhance the formation of perovskite phase.

Microstructure and phase evolution of SrTiO3 thin films on Si prepared by the use of polymeric precursors

The use of polymeric precursors was employed in preparing SrTiO3 thin films by dip coating using Si (111) as substrate. Crack free films were obtained after sintering at temperatures ranging from 550 to 1000°C. The microstructure, characterized by SEM, shows the development of dense polycrystalline films with smooth surface and mean grain size of 52 nm, for films sintered at 1000°C. Grazing incident angle XRD characterization of these films shows that the SrTiO3 phase crystallizes from an inorganic amorphous matrix. No intermediate crystalline phase was identified.

Electrical and optical characteristics of SnO2 thin films prepared by dip coating from aqueous colloidal suspensions

Starting from aqueous colloidal suspensions, undoped and Nb5+ doped SnO2 thin films have been prepared by using the dip-coating sol gel process. X-ray diffraction results show that films are polycrystalline with crystallites of average size1-4nm. Decreasing the thickness of the films and increasing the Nb5+ concentration limits the crystallite size growth during firing. Complex impedance measurements reveal capacitive and resistive effects between adjacent crystallites or grains, characteristic of electrical potential barriers. The transfer of charge throughout these barriers determines the macroscopic electrical resistance of the layer. The analysis of the optical absorption spectra shows that the samples present more than 80% of their transmittance in the visible region and the value of the band gap energy increases with decreasing crystallite size. © 1997 Chapman & Hall.

LiNbO3 thin films prepared from a polymeric precursor method

LiNbO3 thin films were prepared from polymeric precursor method by dip coating. The precursor films, deposited on Si(111) substrates, were heat-treated from 400°C to 900°C in order to study the heat treatment influence on the crystallinity and microstructure of the final film. The X-ray diffraction patterns showed, in particular, that these films crystallize at low temperature (450°C) and present no preferential orientation. The scanning electron microscopy studies showed that the film microstructure is strongly influenced by the annealing temperature. © 1997 Trans Tech Publications.

Properties of BaBi2Ta2O9 thin films prepared by chemical solution deposition technique for dynamic random-access memory applications

We report on the properties of BaBi2Ta2O9 (BBT) thin films for dynamic random-access memory (DRAM) and integrated capacitor applications. Crystalline BBT thin films were successfully fabricated by the chemical solution deposition technique on Pt-coated Si substrates at a low annealing temperature of 650°C. The films were characterized in terms of structural, dielectric, and insulating properties. The electrical measurements were conducted on Pt/BBT/Pt capacitors. The typical measured small signal dielectric constant and dissipation factor, at 100 kHz, were 282 and 0.023, respectively, for films annealed at 700°C for 60 min. The leakage current density of the films was lower than 10-9 A/cm2 at an applied electric field of 300 kV/cm. A large storage density of 38.4 fC/μm2 was obtained at an applied electric field of 200 kV/cm. The high dielectric constant, low dielectric loss and low leakage current density suggest the suitability of BBT thin films as dielectric layer for DRAM and integrated capacitor applications.

Influence of heat treatment on LiNbO3 thin films prepared on Si(111) by the polymeric precursor method

The effects of heat-treatment temperature on LiNbO3 thin films prepared by the polymeric precursor method were investigated. The precursor solution was deposited on Si(111) substrates by dip coating. X-ray diffraction and thermal analyses revealed that the crystallization process occurred at a low temperature (420 °C) and led to films with no preferential orientation. High-temperature treatments promoted formation of the LiNb3O8 phase. Scanning electron microscopy, coupled with energy dispersive spectroscopy analyses, showed that the treatment temperature also affected the film microstructure. The surface texture - homogeneous, smooth, and pore-free at low temperature - turned into an `islandlike' microstructure for high-temperature treatments.