LiNbO3 thin films prepared from a polymeric precursor method


Autoria(s): Bouquet, V.; Leite, E. R.; Longo, Elson; Varela, José Arana
Contribuinte(s)

Universidade Estadual Paulista (UNESP)

Data(s)

27/05/2014

27/05/2014

01/12/1997

Resumo

LiNbO3 thin films were prepared from polymeric precursor method by dip coating. The precursor films, deposited on Si(111) substrates, were heat-treated from 400°C to 900°C in order to study the heat treatment influence on the crystallinity and microstructure of the final film. The X-ray diffraction patterns showed, in particular, that these films crystallize at low temperature (450°C) and present no preferential orientation. The scanning electron microscopy studies showed that the film microstructure is strongly influenced by the annealing temperature. © 1997 Trans Tech Publications.

Formato

1143-1146

Identificador

http://dx.doi.org/10.4028/www.scientific.net/KEM.132-136.1143

Key Engineering Materials, n. 136 PART 2, p. 1143-1146, 1997.

1013-9826

http://hdl.handle.net/11449/65305

10.4028/www.scientific.net/KEM.132-136.1143

2-s2.0-0030713916

Idioma(s)

eng

Relação

Key Engineering Materials

Direitos

closedAccess

Palavras-Chave #Ferroelectrics #Lithium niobate #Pechini #Thin films #Annealing #Crystal microstructure #Crystal orientation #Crystallization #Ferroelectric materials #Scanning electron microscopy #Semiconducting silicon #Substrates #X ray diffraction analysis #Polymeric precursor method #Lithium compounds
Tipo

info:eu-repo/semantics/article