LiNbO3 thin films prepared from a polymeric precursor method
Contribuinte(s) |
Universidade Estadual Paulista (UNESP) |
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Data(s) |
27/05/2014
27/05/2014
01/12/1997
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Resumo |
LiNbO3 thin films were prepared from polymeric precursor method by dip coating. The precursor films, deposited on Si(111) substrates, were heat-treated from 400°C to 900°C in order to study the heat treatment influence on the crystallinity and microstructure of the final film. The X-ray diffraction patterns showed, in particular, that these films crystallize at low temperature (450°C) and present no preferential orientation. The scanning electron microscopy studies showed that the film microstructure is strongly influenced by the annealing temperature. © 1997 Trans Tech Publications. |
Formato |
1143-1146 |
Identificador |
http://dx.doi.org/10.4028/www.scientific.net/KEM.132-136.1143 Key Engineering Materials, n. 136 PART 2, p. 1143-1146, 1997. 1013-9826 http://hdl.handle.net/11449/65305 10.4028/www.scientific.net/KEM.132-136.1143 2-s2.0-0030713916 |
Idioma(s) |
eng |
Relação |
Key Engineering Materials |
Direitos |
closedAccess |
Palavras-Chave | #Ferroelectrics #Lithium niobate #Pechini #Thin films #Annealing #Crystal microstructure #Crystal orientation #Crystallization #Ferroelectric materials #Scanning electron microscopy #Semiconducting silicon #Substrates #X ray diffraction analysis #Polymeric precursor method #Lithium compounds |
Tipo |
info:eu-repo/semantics/article |