Structural characterization of intermediate and metastable phases by electron microscopy

Structure characterization of nanocrystalline intermediates and metastable phases is of primary importance for a deep understanding of synthetic processes undergoing solid-to-solid state phase transitions. Understanding the evolution from the first nucleation stage to the final synthetic product supports not only the optimization of existing processes, but might assist in tailoring new synthetic paths. A systematic investigation of intermediates and metastable phases is hampered because it is impossible to produce large crystals and only in few cases a pure synthetic product can be obtained. Structure investigation by X-ray powder diffraction methods is still challenging on nanoscale, especially when the sample is polyphasic. Electron diffraction has the advantage to collect data from single nanoscopic crystals, but is limited by data incompleteness, dynamical effects and fast deterioration of the sample under the electron beam. Automated diffraction tomography (ADT), a recently developed technique, making possible to collect more complete three-dimensional electron diffraction data and to reduce at the same time dynamical scattering and beam damage, thus allowing to investigate even beam sensitive materials (f.e. hydrated phases and organics). At present, ADT is the only technique able to deliver complete three-dimensional structural information from single nanoscopic grains, independently from other surrounding phases. Thus, ADT is an ideal technique for the study of on-going processes where different phases exist at the same time and undergo several structural transitions. In this study ADT was used as the main technique for structural characterization for three different systems and combined subsequently with other techniques, among which high-resolution transmission electron microscopy (HRTEM), cryo-TEM imaging, X-ray powder diffraction (XRPD) and energy disperse X-ray spectroscopy (EDX).rnAs possible laser host materials, i.e. materials with a broad band emission in the near-infrared region, two unknown phases were investigated in the ternary oxide system M2O-Al2O3-WO3 (M = K, Na). Both phases exhibit low purity as well as non-homogeneous size distribution and particle morphology. The structures solved by ADT are also affected by pseudo-symmetry. rnSodium titanate nanotubes and nanowires are both intermediate products in the synthesis of TiO2 nanorods which are used as additives to colloidal TiO2 film for improving efficiency of dye-sensitized solar cells (DSSC). The structural transition from nantubes to nanowires was investigated in a step by step time-resolved study. Nanowires were discovered to consist of a hitherto unknown phase of sodium titanate. This new phase, typically affected by pervasive defects like mutual layer shift, was structurally determined ab-initio on the basis of ADT data. rnThe third system is related with calcium carbonate nucleation and early crystallization. The first part of this study is dedicated to the extensive investigations of calcium carbonate formation in a step by step analysis, up to the appearance of crystalline individua. The second part is dedicated to the structure determination by ADT of the first-to-form anhydrated phase of CaCO3: vaterite. An exhaustive structure analysis of vaterite had previously been hampered by diffuse scattering, extra periodicities and fast deterioration of the material under electron irradiation. rn

Morphological and optical properties of SiON thin films for photovoltaic applications

In the last years technologies related to photovoltaic energy have rapidly developed and the interest on renewable energy power source substantially increased. In particular, cost reduction and appropriate feed-in tariff contributed to the increase of photovoltaic installation, especially in Germany and Italy. However, for several technologies, the observed experimental efficiency of solar cells is still far from the theoretical maximum efficiency, and thus there is still room for improvement. In this framework the research and development of new materials and new solar devices is mandatory. In this thesis the morphological and optical properties of thin films of nanocrystalline silicon oxynitride (nc-SiON) have been investigated. This material has been studied in view of its application in Si based heterojunction solar cells (HIT). Actually, a-Si:H is used now in these cells as emitter layer. Amorphous SiO_x N_y has already shown excellent properties, such as: electrical conductivity, optical energy gap and transmittance higher than the ones of a-Si:H. Nc-SiO_x N_y has never been investigated up to now, but its properties can surpass the ones of amorphous SiON. The films of nc-SiON have been deposited at the University of Konstanz (Germany). The properties of these films have been studied using of atomic force microscopy and optical spectroscopy methods. This material is highly complex as it is made by different coexisting phases. The main purpose of this thesis is the development of methods for the analyses of morphological and optical properties of nc-SiON and the study of the reliability of those methods to the measurement of the characteristics of these silicon films. The collected data will be used to understand the evolution of the properties of nc-SiON, as a function of the deposition parameters. The results here obtained show that nc-SiON films have better properties with respect to both a-Si:H and a-SiON, i. e. higher optical band-gap and transmittance. In addition, the analysis of the variation of the observed properties as a function of the deposition parameters allows for the optimization of deposition conditions for obtaining optimal efficiency of a HIT cell with SiON layer.

Sputter optimization of AlN on diamond substrates for high frequency SAW resonators

The AlN/diamond structure is an attractive combination for SAW devices and its application at high frequencies. In this work, the synthesis of AlN thin films by reactive sputtering has been optimized on diamond substrates in order to process high frequency devices. Polished microcrystalline and as-grown nanocrystalline diamond substrates have been used to deposit AlN of different thickness under equal sputtering conditions. For the smoother substrates, the FWHM of the rocking curve of the (002) AlN peak varies from 3.8° to 2.7° with increasing power. SAW one port resonators have been fabricated on these films, whose electrical characterization (in terms of S11 parameters) is reported.

Fabrication of high frequency SAW resonators using AlN/Diamond/Si technology

The synthesis of AlN on diamond is a great challenge, not only because of the between an AlN/diamond interface, but also because of the high surface roughness of the diamond layers [8, 9]. In the case of microcrystalline diamond, the last problem was solved by polishing. However, polishing nanocrystalline diamond is not straightforward. For the diamond synthesis by CVD, silicon was used as a substrate. The diamond/Si interface presents a smoother diamond than the diamond/air interface. This paper reports on the fabrication of high frequency SAW resonators using AlN/Diamond/Si technology.

High precision pressure sensors based on SAW devices in the GHz range

In this paper, an AlN/free-standing nanocrystalline diamond (NCD) system is proposed in order to process high frequency surface acoustic wave (SAW) resonators for sensing applications. The main problem of synthetic diamond is its high surface roughness that worsens the sputtered AlN quality and hence the device response. In order to study the feasibility of this structure, AlN films from 150 nm up to 1200 nm thick have been deposited on free-standing NCD. We have then analysed the influence of the AlN layer thickness on its crystal quality and device response. Optimized thin films of 300 nm have been used to fabricate of one-port SAW resonators operating in the 10–14 GHz frequency range. A SAW based sensor pressure with a sensibility of 0.33 MHz/bar has been fabricated.

New Intermediate band sulphide nanoparticles acting in the full visible light range spectra as an active photocatalyst

Nowadays one of the challenges of materials science is to find new technologies that will be able to make the most of renewable energies. An example of new proposals in this field are the intermediate-band (IB) materials, which promise higher efficiencies in photovoltaic applications (through the intermediate band solar cells), or in heterogeneous photocatalysis (using nanoparticles of them, for the light-induced degradation of pollutants or for the efficient photoevolution of hydrogen from water). An IB material consists in a semiconductor in which gap a new level is introduced [1], the intermediate band (IB), which should be partially filled by electrons and completely separated of the valence band (VB) and of the conduction band (CB). This scheme (figure 1) allows an electron from the VB to be promoted to the IB, and from the latter to the CB, upon absorption of photons with energy below the band gap Eg, so that energy can be absorbed in a wider range of the solar spectrum and a higher current can be obtained without sacrificing the photovoltage (or the chemical driving force) corresponding to the full bandgap Eg, thus increasing the overall efficiency. This concept, applied to photocatalysis, would allow using photons of a wider visible range while keeping the same redox capacity. It is important to note that this concept differs from the classic photocatalyst doping principle, which essentially tries just to decrease the bandgap. This new type of materials would keep the full bandgap potential but would use also lower energy photons. In our group several IB materials have been proposed, mainly for the photovoltaic application, based on extensively doping known semiconductors with transition metals [2], examining with DFT calculations their electronic structures. Here we refer to In2S3 and SnS2, which contain octahedral cations; when doped with Ti or V an IB is formed according to quantum calculations (see e.g. figure 2). We have used a solvotermal synthesis method to prepare in nanocrystalline form the In2S3 thiospinel and the layered compound SnS2 (which when undoped have bandgaps of 2.0 and 2.2 eV respectively) where the cation is substituted by vanadium at a ?10% level. This substitution has been studied, characterizing the materials by different physical and chemical techniques (TXRF, XRD, HR-TEM/EDS) (see e.g. figure 3) and verifying with UV spectrometry that this substitution introduces in the spectrum the sub-bandgap features predicted by the calculations (figure 4). For both sulphide type nanoparticles (doped and undoped) the photocatalytic activity was studied by following at room temperature the oxidation of formic acid in aqueous suspension, a simple reaction which is easily monitored by UV-Vis spectroscopy. The spectral response of the process is measured using a collection of band pass filters that allow only some wavelengths into the reaction system. Thanks to this method the spectral range in which the materials are active in the photodecomposition (which coincides with the band gap for the undoped samples) can be checked, proving that for the vanadium substituted samples this range is increased, making possible to cover all the visible light range. Furthermore it is checked that these new materials are more photocorrosion resistant than the toxic CdS witch is a well know compound frequently used in tests of visible light photocatalysis. These materials are thus promising not only for degradation of pollutants (or for photovoltaic cells) but also for efficient photoevolution of hydrogen from water; work in this direction is now being pursued.

High temperature micropillar compression of Al/SiC nanolaminates

The effect of the temperature on the compressive stress–strain behavior of Al/SiC nanoscale multilayers was studied by means of micropillar compression tests at 23 °C and 100 °C. The multilayers (composed of alternating layers of 60 nm in thickness of nanocrystalline Al and amorphous SiC) showed a very large hardening rate at 23 °C, which led to a flow stress of 3.1 ± 0.2 GPa at 8% strain. However, the flow stress (and the hardening rate) was reduced by 50% at 100 °C. Plastic deformation of the Al layers was the dominant deformation mechanism at both temperatures, but the Al layers were extruded out of the micropillar at 100 °C, while Al plastic flow was constrained by the SiC elastic layers at 23 °C. Finite element simulations of the micropillar compression test indicated the role played by different factors (flow stress of Al, interface strength and friction coefficient) on the mechanical behavior and were able to rationalize the differences in the stress–strain curves between 23 °C and 100 °C.

Anisotropic magnetoresistive study in bilayer NiFe-NiO for sensor applications

Related with the detection of weak magnetic fields, the anisotropic magnetoresistive (AMR) effect is widely utilized in sensor applications. Exchange coupling between an antiferromagnet (AF) and the ferromagnet (FM) has been known as a significant parameter in the field sensitivity of magnetoresistance because of pinning effects on magnetic domain in FM layer by the bias field in AF. In this work we have studied the thermal evolution of the magnetization reversal processes in nanocrystalline exchange biased Ni80Fe20/Ni-O bilayers with large training effects and we report the anisotropic magnetoresistance ratio arising from field orientation in the bilayer.

Anisotropic magnetoresistive study in bilayer NiFe-NiO for sensor applications

Related with the detection of weak magnetic fields, the anisotropic magnetoresistive(AMR) effect is widely utilized in sensor applications. Exchange coupling between an antiferromagnet (AF) and the ferromagnet (FM) has been known as a significant parameter in the field sensitivity of magnetoresistance because of pinning effects on magnetic domain in FM layer by the bias field in AF. In this work we have studied the thermal evolution of the magnetization reversal processes in nanocrystalline exchange biased Ni80Fe20/Ni-O bilayers with large training effects and we report the anisotropic magnetoresistance ratio arising from field orientation in the bilayer.

Design, Technology and Characterization of Micromechanised Sensors and Actuators for Harsh Environments

Los sistemas micro electro mecánicos (MEMS) han demostrado ser una exitosa familia de dispositivos que pueden usarse como plataforma para el desarrollo de dispositivos con aplicaciones en óptica, comunicaciones, procesado de señal y sensorización. Los dispositivos MEMS estándar suelen estar fabricados usando tecnología de silicio. Sin embargo, el rendimiento de estos MEMS se puede mejorar si se usan otros materiales. Por ejemplo, el diamante nanocristalino (NCD) ofrece unas excelentes propiedades mecánicas, transparencia y una superficie fácil de funcionalizar. Por otro lado, el sistema de materiales (In; Ga; Al)N, los materiales IIIN, se pueden usar para producir estructuras monocristalinas con alta sensibilidad mecánica y química. Además, el AlN se puede depositar por pulverización catódica reactiva sobre varios substratos, incluyendo NCD, para formar capas policristalinas orientadas con alta respuesta piezoeléctrica. Adicionalmente, tanto el NCD como los materiales III-N muestran una gran estabilidad térmica y química, lo que los hace una elección idónea para desarrollar dispositivos para aplicaciones para alta temperatura, ambientes agresivos e incluso para aplicaciones biocompatibles. En esta tesis se han usado estos materiales para el diseño y medición de demostradores tecnológicos. Se han perseguido tres objetivos principales: _ Desarrollo de unos procesos de fabricación apropiados. _ Medición de las propiedades mecánicas de los materiales y de los factores que limitan el rendimiento de los dispositivos. _ Usar los datos medidos para desarrollar dispositivos demostradores complejos. En la primera parte de esta tesis se han estudiado varias técnicas de fabricación. La estabilidad de estos materiales impide el ataque y dificulta la producción de estructuras suspendidas. Los primeros capítulos de esta disertación se dedican al desarrollo de unos procesos de transferencia de patrones por ataque seco y a la optimización del ataque húmedo sacrificial de varios substratos propuestos. Los resultados de los procedimientos de ataque se presentan y se describe la optimización de las técnicas para la fabricación de estructuras suspendidas de NCD y materiales III-N. En un capítulo posterior se estudia el crecimiento de AlN por pulverización catódica. Como se ha calculado en esta disertación para obtener una actuación eficiente de MEMS, las capas de AlN han de ser finas, típicamente d < 200 nm, lo que supone serias dificultades para la obtención de capas orientadas con respuesta piezoeléctrica. Las condiciones de depósito se han mapeado para identificar las fronteras que proporcionan el crecimiento de material orientado desde los primeros pasos del proceso. Además, durante la optimización de los procesos de ataque se estudió un procedimiento para fabricar películas de GaN nanoporoso. Estas capas porosas pueden servir como capas sacrificiales para la fabricación de estructuras suspendidas de GaN con baja tensión residual o como capas para mejorar la funcionalización superficial de sensores químicos o biológicos. El proceso de inducción de poros se discutirá y también se presentarán experimentos de ataque y funcionalización. En segundo lugar, se han determinado las propiedades mecánicas del NCD y de los materiales III-N. Se han fabricado varias estructuras suspendidas para la medición del módulo de Young y de la tensión residual. Además, las estructuras de NCD se midieron en resonancia para calcular el rendimiento de los dispositivos en términos de frecuencia y factor de calidad. Se identificaron los factores intrínsecos y extrínsecos que limitan ambas figuras de mérito y se han desarrollado modelos para considerar estas imperfecciones en las etapas de diseño de los dispositivos. Por otra parte, los materiales III-N normalmente presentan grandes gradientes de deformación residual que causan la deformación de las estructuras al ser liberadas. Se han medido y modelado estos efectos para los tres materiales binarios del sistema para proporcionar puntos de interpolación que permitan predecir las características de las aleaciones del sistema III-N. Por último, los datos recabados se han usado para desarrollar modelos analíticos y numéricos para el diseño de varios dispositivos. Se han estudiado las propiedades de transducción y se proporcionan topologías optimizadas. En el último capítulo de esta disertación se presentan diseños optimizados de los siguientes dispositivos: _ Traviesas y voladizos de AlN=NCD con actuación piezoeléctrica aplicados a nanoconmutadores de RF para señales de alta potencia. _ Membranas circulares de AlN=NCD con actuación piezoeléctrica aplicadas a lentes sintonizables. _ Filtros ópticos Fabry-Pérot basados en cavidades aéreas y membranas de GaN actuadas electrostáticamente. En resumen, se han desarrollado unos nuevos procedimientos optimizados para la fabricación de estructuras de NCD y materiales III-N. Estas técnicas se han usado para producir estructuras que llevaron a la determinación de las principales propiedades mecánicas y de los parámetros de los dispositivos necesarios para el diseño de MEMS. Finalmente, los datos obtenidos se han usado para el diseño optimizado de varios dispositivos demostradores. ABSTRACT Micro Electro Mechanical Systems (MEMS) have proven to be a successful family of devices that can be used as a platform for the development of devices with applications in optics, communications, signal processing and sensorics. Standard MEMS devices are usually fabricated using silicon based materials. However, the performance of these MEMS can be improved if other material systems are used. For instance, nanocrystalline diamond (NCD) offers excellent mechanical properties, optical transparency and ease of surface functionalization. On the other hand, the (In; Ga; Al)N material system, the III-N materials, can be used to produce single crystal structures with high mechanical and chemical sensitivity. Also, AlN can be deposited by reactive sputtering on various substrates, including NCD, to form oriented polycrystalline layers with high piezoelectric response. In addition, both NCD and III-N materials exhibit high thermal and chemical stability, which makes these material the perfect choice for the development of devices for high temperatures, harsh environments and even biocompatible applications. In this thesis these materials have been used for the design and measurement of technological demonstrators. Three main objectives have been pursued: _ Development of suitable fabrication processes. _ Measurement of the material mechanical properties and device performance limiting factors. _ Use the gathered data to design complex demonstrator devices. In a first part of the thesis several fabrication processes have been addressed. The stability of these materials hinders the etching of the layers and hampers the production of free standing structures. The first chapters of this dissertation are devoted to the development of a dry patterning etching process and to sacrificial etching optimization of several proposed substrates. The results of the etching processes are presented and the optimization of the technique for the manufacturing of NCD and III-N free standing structures is described. In a later chapter, sputtering growth of thin AlN layers is studied. As calculated in this dissertation, for efficient MEMS piezoelectric actuation the AlN layers have to be very thin, typically d < 200 nm, which poses serious difficulties to the production of c-axis oriented material with piezoelectric response. The deposition conditions have been mapped in order to identify the boundaries that give rise to the growth of c-axis oriented material from the first deposition stages. Additionally, during the etching optimization a procedure for fabricating nanoporous GaN layers was also studied. Such porous layers can serve as a sacrificial layer for the release of low stressed GaN devices or as a functionalization enhancement layer for chemical and biological sensors. The pore induction process will be discussed and etching and functionalization trials are presented. Secondly, the mechanical properties of NCD and III-N materials have been determined. Several free standing structures were fabricated for the measurement of the material Young’s modulus and residual stress. In addition, NCD structures were measured under resonance in order to calculate the device performance in terms of frequency and quality factor. Intrinsic and extrinsic limiting factors for both figures were identified and models have been developed in order to take into account these imperfections in the device design stages. On the other hand, III-N materials usually present large strain gradients that lead to device deformation after release. These effects have been measured and modeled for the three binary materials of the system in order to provide the interpolation points for predicting the behavior of the III-N alloys. Finally, the gathered data has been used for developing analytic and numeric models for the design of various devices. The transduction properties are studied and optimized topologies are provided. Optimized design of the following devices is presented at the last chapter of this dissertation: _ AlN=NCD piezoelectrically actuated beams applied to RF nanoswitches for large power signals. _ AlN=NCD piezoelectrically actuated circular membranes applied to tunable lenses. _ GaN based air gap tunable optical Fabry-Pérot filters with electrostatic actuation. On the whole, new optimized fabrication processes has been developed for the fabrication of NCD and III-N MEMS structures. These processing techniques was used to produce structures that led to the determination of the main mechanical properties and device parameters needed for MEMS design. Lastly, the gathered data was used for the design of various optimized demonstrator devices.

Photocatalytic oxidation of propene in gas phase at low concentration by optimized TiO2 nanoparticles

In the present study, nanocrystalline titanium dioxide (TiO2) was prepared by sol–gel method at low temperature from titanium tetraisopropoxide (TTIP) and characterized by different techniques (gas adsorption, XRD, TEM and FTIR). Variables of the synthesis, such as the hydrolyzing agent (acetic acid or isopropanol) and calcination temperatures (300–800 °C), were analyzed to get uniform size TiO2 nanoparticles. The effect that these two variables have on the structure of the resultant TiO2 nanoparticles and on their photocatalytic activity is investigated. The photocatalytic activities of TiO2 nanoparticles were evaluated for propene oxidation at low concentration (100 ppmv) under two different kinds of UV light (UV-A ∼ 365 nm and UV-C ∼ 257.7 nm) and compared with Degussa TiO2 P-25, used as reference sample. The results show that both hydrolyzing agents allow to prepare TiO2 nanoparticles and that the hydrolyzing agent influences the crystalline structure and its change with the thermal treatments. Interestingly, the prepared TiO2 nanoparticles possess anatase phase with small crystalline size, high surface area and higher photocatalytic activity for propene oxidation than commercial TiO2 (Degussa P-25) under UV-light. Curiously, these prepared TiO2 nanoparticles are more active with the 365 nm source than with the 257.7 nm UV-light, which is a remarkable advantage from an application point of view. Additionally, the obtained results are particularly good when acetic acid is the hydrolyzing agent at both wavelengths used, possibly due to the high crystallinity, low anatase phase size and high surface oxygen groups’ content in the nanoparticles prepared with it, in comparison to those prepared using isopropanol.

Metalorganic chemical vapor deposition of GaAsN epilayers: microstructures and optical properties

In this article, we investigate the parameters used in the MOCVD growth of GaAsN epilayers on GaAs substrates and some of their microstructures and optical properties. The N incorporation was found to mainly depend on the growth temperature and the fractional 1,1-dimethylhydrazine molar flow. A thin highly strained interface layer was observed between GaAsN and GaAs, which, contrary to previously published results, was not N enriched. The low-temperature (10 K) photoluminescence spectra were composed of several emissions that we attribute to a combination of interband transition and transitions involving localized defect states. (C) 2004 Elsevier B.V. All rights reserved.

Microstructure of MmM(5)/Mg multi-layer hydrogen storage films prepared by magnetron sputtering

Multi-layer hydrogen storage thin films with Mg and MmNi(3.5)(CoAlMn)(1.5) (here Mm denotes La-rich mischmetal) as alternative layers were prepared by direct current magnetron sputtering. Transmission electron microscopy investigation shows that the microstructure of the MmNi(3.5)(CoAlMn)(1.5) and Mg layers are significantly different although their deposition conditions are the same. The MmNi(3.5)(CoAlMn)(1.5) layer is composed of two regions: one is an amorphous region approximately 4 nm thick at the bottom of the layer and the other is a nanocrystalline region on top of the amorphous region. The Mg layer is also composed of two regions: one is a randomly orientated nanocrystalline region 50 nm thick at the bottom of the layer and the other is a columnar crystallite region on top of the nanocrystalline region. These Mg columnar crystallites have their [001] directions parallel to the growth direction and the average lateral size of these columnar crystallites is about 100 nm. A growth mechanism of the multi-layer thin films is discussed based on the experiment results. Wiley-Liss, Inc.

Influence of particle morphology on nanostructural feature and conducting property in Sm-doped CeO2 sintered body

Doped ceria (CeO2,) compounds are fluorite type oxides, which show oxide ionic conductivity higher than yttria stabilized zirconia (YSZ), in oxidizing atmospheres. As a consequence of this, considerable interest has been shown in application of these materials for 'low (500-650 degreesC)' or 'intermediate (650-800 degreesC)' temperature operation, solid oxide fuel cells (SOFCs). In this study, the authors prepared two kinds of nanosize Sm-doped CeO2 particles with different morphologies: one type was round and the other was elongated. Processing these powders with different morphology produced dense materials with very different ionic conducting properties and different nanoscale microstructures. Since both particles are very fine and well dispersed, sintered bodies with high density (relative density >95% of theoretical) could be prepared using both types of powder particles. The electrical conductivity of sintered bodies prepared from these powders with different starting morphologies was very different. Materials prepared from particles having a round shape were much higher than those produced using powders with an elongated morphology. Measured activation energies of the corresponding sintered samples showed a similar trend; round particles (60 kJ/mol), elongated particles (74 kJ/mol). While X-ray diffraction (XRD) profiles of these sintered materials were identical, diffuse scatter was observed in the back.-round of selected area electron diffraction pattern recorded from both sintered bodies. This indicated an underlying structure that appeared to have been influenced by the processing technology. Detailed observation using high-resolution transmission electron microscopy (HR-TEM) revealed that the size of microdomain with ordering of cations in the sintered body made from round shape particles was much smaller than that of the sintered body made from elongated particles. Accordingly, it is concluded that the morphology of doped CeO2 powders strongly influenced the microdomain size and electrolytic properties in the doped CeO2 sintered body. (C) 2004 Elsevier B.V. All rights reserved.

A Two-Step Sol–Gel Method for Synthesis of Nanoporous TiO2

This article reports a study of the effects of synthesis parameters on the preparation and formation of mesoporous titania nanopowders by employing a two-step sol-gel method. These materials displayed crystalline domains characteristic of anatase. The first step of the process involved the hydrolysis of titanium isopropoxide in a basic aqueous solution mediated by neutral surfactant. The solid product obtained from step 1 was then treated in an acidified ethanol solution containing the same titanium precursor to thicken the pore walls. Low pH and higher loading of the Ti precursor in step 2 produced better mesoporosity and crystallinity of titanium dioxide polymorphs. The resultant powder exhibited a high surface area (73.8 m(2)/g) and large pore volume (0.17 cm(3)/g) with uniform mesopores. These materials are envisaged to be used as precursors for mesoporous titania films as a wide band gap semiconductor in dye-sensitized nanocrystalline TiO2 solar cells.