Anisotropic magnetoresistive study in bilayer NiFe-NiO for sensor applications


Autoria(s): Moron Fernandez, Carlos; Garcia Garcia, Alfonso; Tremps Guerra, Enrique; Somolinos Sanchez, Jose Andres
Data(s)

2013

Resumo

Related with the detection of weak magnetic fields, the anisotropic magnetoresistive (AMR) effect is widely utilized in sensor applications. Exchange coupling between an antiferromagnet (AF) and the ferromagnet (FM) has been known as a significant parameter in the field sensitivity of magnetoresistance because of pinning effects on magnetic domain in FM layer by the bias field in AF. In this work we have studied the thermal evolution of the magnetization reversal processes in nanocrystalline exchange biased Ni80Fe20/Ni-O bilayers with large training effects and we report the anisotropic magnetoresistance ratio arising from field orientation in the bilayer.

Formato

application/pdf

Identificador

http://oa.upm.es/29142/

Idioma(s)

spa

Publicador

E.U. de Arquitectura Técnica (UPM)

Relação

http://oa.upm.es/29142/2/INVE_MEM_2013_168548.pdf

Direitos

http://creativecommons.org/licenses/by-nc-nd/3.0/es/

info:eu-repo/semantics/openAccess

Fonte

Materials and applications for sensors and transducers II | 2nd Conference on Materials and Applications for Sensors and Transducers, IC-MAST | 24/05/2012-28/05/2012 | Budapest, Hungary

Palavras-Chave #Ingeniería Civil y de la Construcción #Materiales
Tipo

info:eu-repo/semantics/conferenceObject

Ponencia en Congreso o Jornada

PeerReviewed