Anisotropic magnetoresistive study in bilayer NiFe-NiO for sensor applications


Autoria(s): Moron Fernandez, Carlos; Garcia Garcia, Alfonso; Tremps Guerra, Enrique; Somolinos Sanchez, Jose Andres
Data(s)

01/03/2013

Resumo

Related with the detection of weak magnetic fields, the anisotropic magnetoresistive(AMR) effect is widely utilized in sensor applications. Exchange coupling between an antiferromagnet (AF) and the ferromagnet (FM) has been known as a significant parameter in the field sensitivity of magnetoresistance because of pinning effects on magnetic domain in FM layer by the bias field in AF. In this work we have studied the thermal evolution of the magnetization reversal processes in nanocrystalline exchange biased Ni80Fe20/Ni-O bilayers with large training effects and we report the anisotropic magnetoresistance ratio arising from field orientation in the bilayer.

Formato

application/pdf

Identificador

http://oa.upm.es/29145/

Idioma(s)

eng

Publicador

E.T.S.I. Navales (UPM)

Relação

http://oa.upm.es/29145/1/INVE_MEM_2013_168438.pdf

http://www.scientific.net/KEM.543.167

info:eu-repo/semantics/altIdentifier/doi/10.4028/www.scientific.net/KEM.543.167

Direitos

http://creativecommons.org/licenses/by-nc-nd/3.0/es/

info:eu-repo/semantics/openAccess

Fonte

Key Engineering Materials, ISSN 1013-9826, 2013-03, Vol. 543

Palavras-Chave #Ingeniería Civil y de la Construcción
Tipo

info:eu-repo/semantics/article

Artículo

PeerReviewed