Fabrication of high frequency SAW resonators using AlN/Diamond/Si technology
| Data(s) |
2011
|
|---|---|
| Resumo |
The synthesis of AlN on diamond is a great challenge, not only because of the between an AlN/diamond interface, but also because of the high surface roughness of the diamond layers [8, 9]. In the case of microcrystalline diamond, the last problem was solved by polishing. However, polishing nanocrystalline diamond is not straightforward. For the diamond synthesis by CVD, silicon was used as a substrate. The diamond/Si interface presents a smoother diamond than the diamond/air interface. This paper reports on the fabrication of high frequency SAW resonators using AlN/Diamond/Si technology. |
| Formato |
application/pdf |
| Identificador | |
| Idioma(s) |
eng |
| Relação |
http://oa.upm.es/12898/2/INVE_MEM_2011_108088.pdf http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6293303 info:eu-repo/semantics/altIdentifier/doi/null |
| Direitos |
http://creativecommons.org/licenses/by-nc-nd/3.0/es/ info:eu-repo/semantics/openAccess |
| Fonte |
Proceedings of 2011 IEEE International Ultrasonics Symposium (IUS) | 2011 IEEE International Ultrasonics Symposium (IUS) | 18/10/2011 - 21/10/2011 | Orlando, Florida, EEUU |
| Palavras-Chave | #Física #Informática |
| Tipo |
info:eu-repo/semantics/conferenceObject Ponencia en Congreso o Jornada PeerReviewed |
