Influences of Al doping concentration on structural, electrical and optical properties of Zn0.95Ni0.05O powders

Nanocrystalline Zn0.95 - xNi0.05AlxO (x = 0.01, 0.02, 0.05 and 0.10) diluted magnetic semiconductors have been synthesized by an auto-combustion method. X-ray diffraction measurements indicate that all Al-doped Zn0.95Ni0.05O samples have the pure wurtzite structure. Transmission electron microscope analyses show that the as-synthesized powders are of the size 40 - 45 nm. High-resolution transmission electron microscope, energy dispersive spectrometer and X-ray photoemission spectroscope analyses indicate that Ni2+ and Al3+ uniformly substitute Zn2+ in the wurtzite structure without forming any secondary phases. The Al doping concentration dependences of cell parameters (a and c), resistance and the ratio of green emission to UV emission have the similar trends. (c) 2007 Elsevier B.V. All rights reserved.

Studies of magnetic interactions in Mn-doped β-Ga2O3 from first-principles calculations

The magnetic behavior of Mn-doped beta-Ga2O3 is Studied from first-principles calculations within the generalized gradient approximation method. Calculations show that ferromagnetic ordering is always favorable for configurations in which two Mn ions substitute either tetrahedral or octahedral sites, and the ferromagnetic ground state is also sometimes favorable for configurations where one Mn ion substitutes a tetrahedral site and another Mn ion substitutes an octahedral site. However, the configurations of the latter case are less stable than those of the former. (c) 2008 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Studies of magnetic interactions in Ni-doped ZnO from first-principles calculations

The magnetic interactions in Ni-doped ZnO are calculated using GGA and GGA + U method of density functional theory. The following three cases: (i) Ni-doped ZnO, (ii) (Ni, Al)-codoped ZnO, and (iii) (Ni, Li)-codoped ZnO are studied. The ferromagnetic ordering is always favorable for the three cases within GGA method. However, the ferromagnetic state is sometimes favorable after treating within the method of GGA + U. The GGA underestimates the correlated interactions especially when the Ni ions align directly to each other. (C) 2007 Elsevier B.V. All rights reserved.

Characterization of m-plane ZnO thin film on gamma-LiAlO2 (100) substrate by metal-organic chemical vapor deposition

Non-polar (1 (1) over bar 00)m-plane ZnO thin film has been prepared on gamma-LiAlO2 (100)substrate via the low pressure metal organic chemical vapor deposition. Obvious intensity variation of the E-2 mode in the polarized Raman spectra and the absorption edge shift in the polarized optical transmission spectra indicate that the m-plane film exhibits optical anisotropy, which have applications in certain optical devices, such as the UV modulator and polarization-dependent beam switch. From the atomic force microscopy images, highly-oriented uniform-sized grains of rectangular shape were observed. (c) 2008 Elsevier B.V. All rights reserved.

Absence of room-temperature ferromagnetism in Al-codoped Zn0.95Co0.05O nanoparticles

Nanocrystalline Zn0.95-xCo0.05AlxO (x=0, 0.01, 0.05) diluted magnetic semiconductors have been synthesized by an auto-combustion method. X-ray diffraction measurements indicated that Al-doped Zn0.95Co0.05O samples had the pure wurtzite structure. X-ray absorption spectroscopy, high-resolution transmission electron microscope, energy dispersive spectrometer and Co 2p core-level photoemission spectroscope analyses indicated that Co2+ substituted for Zn2+ without forming any secondary phases or impurities. Resistance measurements showed that the resistance values of Co and Al codoped samples were still so large in the giga magnitude. Magnetic investigations showed that nanocrystalline Al-doped Zn0.95Co0.05O samples had no indication of room temperature ferromagnetism. (C) 2007 Elsevier B.V. All rights reserved.

Laser-induced damage threshold of ZrO2 thin films prepared at different oxygen partial pressures by electron-beam evaporation

ZrO2, films were deposited by electron-beam evaporation with the oxygen partial pressure varying from 3 X 10(-3) Pa to I I X 10(-3) Pa. The phase structure of the samples was characterized by x-ray diffraction (XRD). The thermal absorption of the films was measured by the surface thermal lensing technique. A spectrophotometer was employed to measure the refractive indices of the samples. The laser-induced damage threshold (LIDT) was assessed using a 1064, nm Nd: yttritium-aluminium-garnet pulsed laser at pulse width of 12 ns. The influence of oxygen partial pressure on the microstructure and LIDT of ZrO2 films was investigated. XRD data revealed that the films changed from polycrystalline to amorphous as the oxygen partial pressure increased. The variation of refractive index at 550 nm wavelength indicated that the packing density of the films decreased gradually with increasing oxygen partial pressure. The absorptance of the samples decreased monotonically from 125.2 to 84.5 ppm with increasing oxygen partial pressure. The damage threshold, values increased from 18.5 to 26.7 J/cm(2) for oxygen partial pressures varying from 3 X 10(-3) Pa to 9 X 10(-3) Pa, but decreased to 17.3 J/cm(2) in the case of I I X 10(-3) Pa. (C) 2005 American Vacuum Society.

Laser-induced damage threshold of ZrO2 thin films prepared at different oxygen partial pressures by electron-beam evaporation

ZrO2, films were deposited by electron-beam evaporation with the oxygen partial pressure varying from 3 X 10(-3) Pa to I I X 10(-3) Pa. The phase structure of the samples was characterized by x-ray diffraction (XRD). The thermal absorption of the films was measured by the surface thermal lensing technique. A spectrophotometer was employed to measure the refractive indices of the samples. The laser-induced damage threshold (LIDT) was assessed using a 1064, nm Nd: yttritium-aluminium-garnet pulsed laser at pulse width of 12 ns. The influence of oxygen partial pressure on the microstructure and LIDT of ZrO2 films was investigated. XRD data revealed that the films changed from polycrystalline to amorphous as the oxygen partial pressure increased. The variation of refractive index at 550 nm wavelength indicated that the packing density of the films decreased gradually with increasing oxygen partial pressure. The absorptance of the samples decreased monotonically from 125.2 to 84.5 ppm with increasing oxygen partial pressure. The damage threshold, values increased from 18.5 to 26.7 J/cm(2) for oxygen partial pressures varying from 3 X 10(-3) Pa to 9 X 10(-3) Pa, but decreased to 17.3 J/cm(2) in the case of I I X 10(-3) Pa. (C) 2005 American Vacuum Society.

The effects of oxygen partial pressure on the optical absorption edge and the UV emission energy of ZnO films

The optical absorption edge and ultraviolet (UV) emission energy of ZnO films deposited by direct current (DC) reactive magnetron sputtering at room temperature have been investigated. With the oxygen ratio increasing, the structure of films changes from zinc and zinc oxide coexisting phase to single-phase ZnO and finally to the highly (002) orientation. Both the grain size and the stress of ZnO film vary with the oxygen partial pressure. Upon increasing the oxygen partial pressure in the growing ambient, the visible emission in the room-temperature photoluminescence spectra was suppressed without sacrificing the band-edge emission intensity in the ultraviolet region. The peaks of photoluminescence spectra were located at 3.06---3.15 eV. From optical transmittance spectra of ZnO films, the optical band gap edge was observed to shift towards shorter wavelength with the increase of oxygen partial pressure.

不同沉积参量下ZrO_2薄膜的微结构和激光损伤阈值

ZrO2采用X射线衍射(XRD)技术分析了不同充氧条件和沉积温度对ZrO2溥膜组成结构的影响，并对不同工艺下制备的薄膜的表面粗糙度和激光损伤阈值进行了测量。结果发现随着氧压的升高，ZrO2溥膜将由单斜相多晶态逐渐转变为非晶态结构，而随着基片温度的增加，溥膜将由非晶态逐渐转变为单斜相多晶态。同时发现随着氧压升高晶粒尺寸减小，而随着沉积温度增加，晶粒尺寸增大。氧压增加时工艺对表面粗糙度有一定程度的改善，而沉积温度升高，工艺对表面粗糙度的改善不明显。晶粒尺寸大小变化与表面粗糙度变化存在对应关系。激光损伤测量表明

沉积温度对HfO2薄膜残余应力的影响

用电子柬蒸发方法制备了HfO2薄膜，根据镀膜前后基片曲率半径的变化，用Stoney公式计算了薄膜应力。讨论了沉积温度对薄膜残余应力的影响。结果发现，HfO2薄膜的残余应力均为张应力，应力值随沉积温度的升高先增大后减小，在280℃左右出现极大值。对样品进行了XRD测试，从微观结构上对实验结果进行了分析，发现微结构演变引起的内应力变化是引起薄膜残余应力改变的主要因素，HfO2薄膜在所选沉积温度60～350℃内出现了晶态转变，堆积密度随温度升高而增大。

薄膜材料对TiO2基薄膜激光损伤阈值的影响

abstract {The optical property, structure, surface properties (roughness and defect density) and laser-induced damage threshold (LIDT) of TiO₂ films deposited by electronic beam (EB) evaporation of TiO₂ (rutile), TiO₂ (anatase) and TiO₂ + Ta₂O₅ composite materials are comparatively studied. All films show the polycrystalline anatase TiO₂ structure. The loose sintering state and phase transformation during evaporating TiO₂ anatase slice lead to the high surface defect density, roughness and extinction coefficient, and low LIDT of films. The TiO₂ + Ta₂O₅ composite films have the lowest extinction coefficient and the highest LIDT among all samples investigated. Guidance of selecting materials for high LIDT laser mirrors is given.}

Biologically sensitive field-effect devices using polysilicon TFTs

The authors present a review of recent developments in the detection of biomolecular interactions with field-effect devices. Ion-sensitive field-effect transistors (ISFETs) and enzyme field-effect transistors (EnFETs), based on polycrystalline silicon (poly-Si) TFTs, are discussed. Label-free electrical detection of DNA hybridization has been achieved by a new method, by using MOS capacitors or poly-Si TFTs. In principle, the method can be extended to other chemical or biochemical systems, such as proteins and cells.

Gráficos de controle adaptativos para monitoramento de perfis

Processos de produção precisam ser avaliados continuamente para que funcionem de modo mais eficaz e eficiente possível. Um conjunto de ferramentas utilizado para tal finalidade é denominado controle estatístico de processos (CEP). Através de ferramentas do CEP, o monitoramento pode ser realizado periodicamente. A ferramenta mais importante do CEP é o gráfico de controle. Nesta tese, foca-se no monitoramento de uma variável resposta, por meio dos parâmetros ou coeficientes de um modelo de regressão linear simples. Propõe-se gráficos de controle χ2 adaptativos para o monitoramento dos coeficientes do modelo de regressão linear simples. Mais especificamente, são desenvolvidos sete gráficos de controle χ2 adaptativos para o monitoramento de perfis lineares, a saber: gráfico com tamanho de amostra variável; intervalo de amostragem variável; limites de controle e de advertência variáveis; tamanho de amostra e intervalo de amostragem variáveis; tamanho de amostra e limites variáveis; intervalo de amostragem e limites variáveis e por fim, com todos os parâmetros de projeto variáveis. Medidas de desempenho dos gráficos propostos foram obtidas através de propriedades de cadeia de Markov, tanto para a situação zero-state como para a steady-state, verificando-se uma diminuição do tempo médio até um sinal no caso de desvios pequenos a moderados nos coeficientes do modelo de regressão do processo de produção. Os gráficos propostos foram aplicados a um exemplo de um processo de fabricação de semicondutores. Além disso, uma análise de sensibilidade dos mesmos é feita em função de desvios de diferentes magnitudes nos parâmetros do processo, a saber, no intercepto e na inclinação, comparando-se o desempenho entre os gráficos desenvolvidos e também com o gráfico χ2 com parâmetros fixos. Os gráficos propostos nesta tese são adequados para vários tipos de aplicações. Neste trabalho também foi considerado características de qualidade as quais são representadas por um modelo de regressão não-linear. Para o modelo de regressão não-linear considerado, a proposta é utilizar um método que divide o perfil não-linear em partes lineares, mais especificamente, um algoritmo para este fim, proposto na literatura, foi utilizado. Desta forma, foi possível validar a técnica proposta, mostrando que a mesma é robusta no sentido que permite tipos diferentes de perfis não-lineares. Aproxima-se, portanto um perfil não-linear por perfis lineares por partes, o que proporciona o monitoramento de cada perfil linear por gráficos de controle, como os gráficos de controle desenvolvidos nesta tese. Ademais apresenta-se a metodologia de decompor um perfil não-linear em partes lineares de forma detalhada e completa, abrindo espaço para ampla utilização.

Resistência de união entre cimentos resinosos autoadesivos e cerâmicas de zircônia policristalina

O objetivo deste estudo foi avaliar a resistência de união a microtração de cimentos resinosos autoadesivos a cerâmicas de zircônia policristalina. Dezoito blocos cerâmicos de zircônia 3Y-TZP (9 LAVA e 9 LAVA Plus) foram jateados com partículas de 50 m de Al2O3por 20 s com pressão de 28 psi a uma distância de 10 mm. Os blocos cerâmicos foram duplicados em resina composta (Point 4, Kerr) por moldagem com silicone. Os blocos de resina composta foram cimentados à superfície jateada da zircônia usando três diferentes cimentos resinosos autoadesivos: (1) RelyX Unicem 2 (3M ESPE); (2) SmartCem 2 (Dentsply); (3) Speedcem (Ivoclar Vivadent). Após 24 h imersos em água destilada a 37oC, os blocos cimentados foram cortados em palitos para testes de microtração,com área da interface adesiva de 1 mm2 0,2 mm, e tensionados até a fratura. Os resultados foram analisados pelo teste de análise de variância de dois fatores e pelo teste de comparações múltiplas LSD (α=0.05). As amostras fraturadas foram analisadas com microscopia eletrônica de varredura (MEV) e o modo de falha foi registrado. A topografia das superfícies cerâmicas antes e após o jateamento foi comparada por microscopia de força atômica (AFM). A resistência de união do cimento Speedcem à zircônia foi estatisticamente superior àquela reportada pelos cimentos RelyX Unicem 2 e SmartCem 2, independentemente da cerâmica usada (p<0,05). O fator cerâmica não teve influência estatística na resistência de união. A interação entre os dois fatores se mostrou significativa (p<0,05). O modo de fratura associado ao SmartCem 2 foi quase exclusivamente adesiva, enquanto oRelyX Unicem 2e o Speedcem exibiram um maior percentual de falhas mistas. Não foram observadas falhas coesivas. O AFM não revelou diferença no padrão de topografia de superfície entre as duas cerâmicas antes ou após o jateamento. Concluiu-se que o cimento Speedcem foi superior na adesão a cerâmicas de zircônia policristalina.