Amplificador de potencia Clase F en banda L basado en tecnología GaN

This paper reports a high efficiency class-F power amplifier based on a gallium nitride high electron mobility transistor (GaN-HEMT), which is designed at the L band of 1640 MHz. The design is based on source and load pull measurements. During the design process, the parasitics of the package of the device are also taken into account in order to achieve the optimal class-F load condition at the intrinsic drain of the transistor. The fabricated class-F power amplifier achieved a maximum drain efficiency (DE) of 77.8% and a output power of 39.6 W on a bandwidth of 280 MHz. Simulation and measurement results have shown good agreement.

Perfect imaging of three object points with only two analytic lens surfaces in two dimensions

In this work, a new two-dimensional analytic optics design method is presented that enables the coupling of three ray sets with two lens profiles. This method is particularly promising for optical systems designed for wide field of view and with clearly separated optical surfaces. However, this coupling can only be achieved if different ray sets will use different portions of the second lens profile. Based on a very basic example of a single thick lens, the Simultaneous Multiple Surfaces design method in two dimensions (SMS2D) will help to provide a better understanding of the practical implications on the design process by an increased lens thickness and a wider field of view. Fermat?s principle is used to deduce a set of functional differential equations fully describing the entire optical system. The transformation of these functional differential equations into an algebraic linear system of equations allows the successive calculation of the Taylor series coefficients up to an arbitrary order. The evaluation of the solution space reveals the wide range of possible lens configurations covered by this analytic design method. Ray tracing analysis for calculated 20th order Taylor polynomials demonstrate excellent performance and the versatility of this new analytical optics design concept.

Influence of substrate type and orientation on the morphology and optical properties of selective area growth of GaN and InGaN nanocolumns

A relevant issue concerning optoelectronic devices based on III-nitrides is the presence of strong polarization fields that may reduce efficiency.

Role of surface trap states on two-dimensional electron gas density in InAlN/AlN/GaN heterostructures

In order to clarify the effect of charged dislocations and surface donor states on the transport mechanisms in polar AlInN/AlN/GaN heterostructures, we have studied the current-voltage characteristics of Schottky junctions fabricated on AlInN/AlN/GaN heterostructures. The reverse-bias leakage current behaviour has been interpreted with a Poole-Frenkel emission of electrons from trap states near the metal-semiconductor junction to dislocation induced states. The variation of the Schottky barrier height as a function of the AlN layer thickness has been measured and discussed, considering the role of the surface states in the formation of the two dimensional electron gas at AlN/GaN interface.

Impact of N2 plasma power discharge on AlGaN/GaN HEMT performance

The effects of power and time conditions of in situ N2 plasma treatment, prior to silicon nitride (SiN) passivation, were investigated on an AlGaN/GaN high-electron mobility transistor (HEMT). These studies reveal that N2 plasma power is a critical parameter to control the SiN/AlGaN interface quality, which directly affects the 2-D electron gas density. Significant enhancement in the HEMT characteristics was observed by using a low power N2 plasma pretreatment. In contrast, a marked gradual reduction in the maximum drain-source current density (IDS max) and maximum transconductance (gm max), as well as in fT and fmax, was observed as the N2 plasma power increases (up to 40% decrease for 210 W). Different mechanisms were proposed to be dominant as a function of the discharge power range. A good correlation was observed between the device electrical characteristics and the surface assessment by atomic force microscopy and Kelvin force microscopy techniques.

Nanocrack-induced leakage current in AlInN/AlN/GaN

Here we report on the study of nano-crack formation in Al1−xInxN/AlN/GaN heterostructures, on its association with composition fluctuation and on its local electrical properties. It is shown here that indium segregation at nano-cracks and threading dislocations originating from the non-pseudomorphic AlN interlayer could be the cause of the high reverse-bias gate leakage current of Ni/Au Schottky contacts on Al1−xInxN/AlN/GaN heterostructures and significantly affects the contact rectifying behavior. Segregation of indium around crack tips in Al1−xInxN acting as conductive paths was assessed with conductive atomic force microscopy.

Investigation of AlInN barrier ISFET structures with GaN capping for pH detection

In the last decade the interest in nitride-based sensors (gas, ions...) and bio-sensors is increased. In the case of ion sensitive FET (ISFET), gate voltages induced by ions adsorbed onto the gate region modulate the source-drain currents.

Modelling Human Displacement through Movement Surfaces.

This paper introduces a new approach for predicting people displacement by means of movementsurfaces. These surfaces can allow the simulation of a person?s movement through the use of semanticmovement concepts such as those making up the environment, the people who are moving, eventsthat describe a human activity, and time of occurrences. In order to represent this movement we havetransformed the trajectory of a person or group of persons into a raindrop path over a surface. As araindrop flows over a surface looking for the maximum slopes, people flow over the landscapelooking for the maximum utility. The movement surfaces are the response to a chained succession of events describing the way a person moves from one destination to another passing through the mostaffine trajectory to his interest. The three construction phases of this modelling approach (exploration,reasoning and prediction) are presented in this paper. The model was implemented in Protégé and aJava application was developed to generate the movement surface based on a recreational scenario.The results had shown the opportunity to apply our approach to optimise the accessibility of recreational areas according to the preferences of the users of that location.

Optical in situ monitoring of hydrogen desorption from Ge(100) surfaces

Molecular hydrogen strongly interacts with vicinal Ge(100) surfaces during preparation in a metal organic vapor phase epitaxy reactor. According to X-ray photoemission spectroscopy and Fourier-transform infrared spectroscopy results, we identify two characteristic reflection anisotropy (RA) spectra for H-free and monohydride-terminated vicinal Ge(100) surfaces. RAS allows in situ monitoring of the surface termination and enables spectroscopic hydrogen kinetic desorption studies on the Ge(100) surface. Comparison of evaluated values for the activation energy and the pre-exponential factor of H desorption evaluated at different photon energies reflects that H unevenly affects the shape of the RA spectrum.

Building functional surfaces for biosensors development

Polyelectrolyte multilayers (PEM) built by layer-by-layer technique have been extensively studied over the last years, resulting in a wide variety of current and potential applications. This technique can be used to construct thin films with different functionalities, or to functionalize surfaces with substantial different properties of those of the underlying substrates. The multilayering process is achieved by the alternate adsorption of oppositely charged polyelectrolytes. In this work we get advantage of the protein resistant property of the Poly (l-lysine)-graft-(polyethyleneglycol) to create protein patterns. Proteins can be immobilized on a surface by unspecific physical adsorption, covalent binding or through specific interactions. The first protein used in this work was laccase, a copper-containing redox enzyme that catalyse the oxidation of a broad range of polyphenols and aromatic substrates, coupled to the reduction of O2 to H2O without need of cofactors. Applications of laccases have been reported in food, pulp, paper, and textile industry, and also in biosensor development. Some uses require the immobilization of the enzyme on solid supports by adsorption, covalent attachment, entrapment, etc, on several substrates. Especially for biosensor development, highly active, stable and reproducible immobilization of laccase is required.

Application and modeling of GaN FET in 1MHz large signal bandwidth power supply for radio frequency power amplifier

In this paper, implementation and testing of non- commercial GaN HEMT in a simple buck converter for envelope amplifier in ET and EER transmission techn iques has been done. Comparing to the prototypes with commercially available EPC1014 and 1015 GaN HEMTs, experimentally demonstrated power supply provided better thermal management and increased the switching frequency up to 25MHz. 64QAM signal with 1MHz of large signal bandw idth and 10.5dB of Peak to Average Power Ratio was gener ated, using the switching frequency of 20MHz. The obtaine defficiency was 38% including the driving circuit an d the total losses breakdown showed that switching power losses in the HEMT are the dominant ones. In addition to this, some basic physical modeling has been done, in order to provide an insight on the correlation between the electrical characteristics of the GaN HEMT and physical design parameters. This is the first step in the optimization of the HEMT design for this particular application.

Parametric Generation of Planing Hulls with NURBS Surfaces

This article presents a mathematical method for producing hard-chine ship hulls based on a set of numerical parameters that are directly related to the geometric features of the hull and uniquely define a hull form for this type of ship. The term planing hull is used generically to describe the majority of hard-chine boats being built today. This article is focused on unstepped, single-chine hulls. B-spline curves and surfaces were combined with constraints on the significant ship curves to produce the final hull design. The hard-chine hull geometry was modeled by decomposing the surface geometry into boundary curves, which were defined by design constraints or parameters. In planing hull design, these control curves are the center, chine, and sheer lines as well as their geometric features including position, slope, and, in the case of the chine, enclosed area and centroid. These geometric parameters have physical, hydrodynamic, and stability implications from the design point of view. The proposed method uses two-dimensional orthogonal projections of the control curves and then produces three-dimensional (3-D) definitions using B-spline fitting of the 3-D data points. The fitting considers maximum deviation from the curve to the data points and is based on an original selection of the parameterization. A net of B-spline curves (stations) is then created to match the previously defined 3-D boundaries. A final set of lofting surfaces of the previous B-spline curves produces the hull surface.

Conchoid surfaces of spheres

The conchoid of a surface F with respect to given xed point O is roughly speaking the surface obtained by increasing the radius function with respect to O by a constant. This paper studies conchoid surfaces of spheres and shows that these surfaces admit rational parameterizations. Explicit parameterizations of these surfaces are constructed using the relations to pencils of quadrics in R3 and R4. Moreover we point to remarkable geometric properties of these surfaces and their construction.

Degree of strata of singular cubic surfaces

Determinación de los grados de algunos estratos de una clasificación de superficies cúbicas singulares, que son subvariedades del espacio proyectivo de dimensión 19 de las que se conoce su dimensión y que son irreducibles.

El Tribunal de las Damas : copia autentica de la executoria que ganò la Modestia en el Tribunal de la Razon, representado por las Damas juiciosas de España ... ; Memorial de las damas arrepentidas de ser locas al Tribunal de las juiciosas y discretas, en cumplimiento de la Carta Executoria, que se les ha notificado à peticion de la Modestia

Fecha de la aprobación, 1755