Influence of substrate type and orientation on the morphology and optical properties of selective area growth of GaN and InGaN nanocolumns

Autoria(s): Sánchez García, Miguel Angel; Albert, Steven; Bengoechea Encabo, Ana; Calleja Pardo, Enrique; Trampert, Achim; Jahn, U.; López, L.L.; Estradé, S.; Rebled, J.M.; Peiró, F.; Nataf, G.; Mierry, P. de; Zuniga Perez, J.
Data(s)

2012
Resumo

A relevant issue concerning optoelectronic devices based on III-nitrides is the presence of strong polarization fields that may reduce efficiency.
Formato

application/pdf
Identificador

http://oa.upm.es/20367/
Idioma(s)

eng
Publicador

E.T.S.I. Telecomunicación (UPM)
Relação

http://oa.upm.es/20367/1/INVE_MEM_2012_134093.pdf
Direitos

http://creativecommons.org/licenses/by-nc-nd/3.0/es/

info:eu-repo/semantics/openAccess
Fonte

2012 German-Japanese-Spanish Joint Workshop on Frontier Photonics and Electronic Materials and Devices, | 2012 German-Japanese-Spanish Joint Workshop on Frontier Photonics and Electronic Materials and Devices, | 21/07/2012 - 22/07/2012 | Berlin, Germany
Palavras-Chave #Electrónica #Materiales
Tipo

info:eu-repo/semantics/conferenceObject

Ponencia en Congreso o Jornada

PeerReviewed
Acesso ao item digital