992 resultados para annealing algorithm
Resumo:
Using an entropy argument, it is shown that stochastic context-free grammars (SCFG's) can model sources with hidden branching processes more efficiently than stochastic regular grammars (or equivalently HMM's). However, the automatic estimation of SCFG's using the Inside-Outside algorithm is limited in practice by its O(n3) complexity. In this paper, a novel pre-training algorithm is described which can give significant computational savings. Also, the need for controlling the way that non-terminals are allocated to hidden processes is discussed and a solution is presented in the form of a grammar minimization procedure. © 1990.
Resumo:
The annealing behaviour of doses up to 4. 10**1**6 ions/cm**2 implanted at ion currents up to 10ma is described. Differences between rapid isothermal and furnace annealing in the measured sheet resistances are due to different amounts of diffusion and to loss of dopant by evaporation. Implantation at high currents (10ma) does not appear to affect the quality of the regrown material provided the temperature rise during implantation is small.
Resumo:
The annealing of ion implantation damage in silicon by rapid isothermal heating has been monitored by the time resolved reflectivity (TRR) method. This technique was applied simultaneously at a wavelength of 632. 8nm and also at 1152nm, where the optical absorption coefficient of silicon is less. The two wavelength method simplifies the interpretation of TRR results, extends the measurement depth and allows good resolution of the position of the interface between amorphous and crystalline silicon. The regrowth of amorphous layers in silicon, created by self implantation and implanted with electrically active impurities, was observed. Regrowth in rapid isothermal annealing occurs during the heating up stage of typical thermal cycles. Impurities such as B, P, and As increase the regrowth rate in a manner consistent with a vacancy model for regrowth. The maximum regrowth rate in boron implanted silicon is limited by the solid solubility.
Resumo:
The annealing behaviour of B implants in the millisecond time regime using a combination of swept line beam and background heating is compared with isothermal annealing with heating cycles of a few seconds. Carrier concentration profiles show that under annealing conditions which restrict diffusion, millisecond processing gives higher activation of B implants than isothermal heating. Transmission electron microscopy shows that millisecond annealing also results in a lower defect density.
Resumo:
Implants of boron into silicon which has been made amorphous by silicon implantation have a shallower depth profile than the same implants into silicon. This results in higher activation and restricted diffusion of the B implants after annealing, and there are also significant differences in the microstructure after annealing compared with B implants into silicon. Rapid isothermal heating with an electron beam and furnace treatments are used to characterize the defect structure as a function of time and temperature. Defects are seen to influence the diffusion of non-substitutional boron.
Resumo:
A dynamic programming algorithm for joint data detection and carrier phase estimation of continuous-phase-modulated signal is presented. The intent is to combine the robustness of noncoherent detectors with the superior performance of coherent ones. The algorithm differs from the Viterbi algorithm only in the metric that it maximizes over the possible transmitted data sequences. This metric is influenced both by the correlation with the received signal and the current estimate of the carrier phase. Carrier-phase estimation is based on decision guiding, but there is no external phase-locked loop. Instead, the phase of the best complex correlation with the received signal over the last few signaling intervals is used. The algorithm is slightly more complex than the coherent Viterbi algorithm but does not require narrowband filtering of the recovered carrier, as earlier appproaches did, to achieve the same level of performance.
Resumo:
This paper describes two applications in speech recognition of the use of stochastic context-free grammars (SCFGs) trained automatically via the Inside-Outside Algorithm. First, SCFGs are used to model VQ encoded speech for isolated word recognition and are compared directly to HMMs used for the same task. It is shown that SCFGs can model this low-level VQ data accurately and that a regular grammar based pre-training algorithm is effective both for reducing training time and obtaining robust solutions. Second, an SCFG is inferred from a transcription of the speech used to train a phoneme-based recognizer in an attempt to model phonotactic constraints. When used as a language model, this SCFG gives improved performance over a comparable regular grammar or bigram. © 1991.
Resumo:
A block-based motion estimation technique is proposed which permits a less general segmentation performed using an efficient deterministic algorithm. Applied to image pairs from the Flower Garden and Table Tennis sequences, the algorithm successfully localizes motion discontinuities and detects uncovered regions. The algorithm is implemented in C on a Sun Sparcstation 20. The gradient-based motion estimation required 28.8 s CPU time, and 500 iterations of the segmentation algorithm required 32.6 s.
Resumo:
This paper suggests a method for identification in the v-gap metric. For a finite number of frequency response samples, a problem for identification in the v-gap metric is formulated and an approximate solution is described. It uses an iterative technique for obtaining an L2-gap approximation. Each stage of the iteration involves solving an LMI optimisation. Given a known stabilising controller and the L2-gap approximation, it is shown how to derive a v-gap approximation.
Resumo:
Hydrogenated tetrahedral amorphous carbon (ta-C:H) is a form of diamond-like carbon with a high sp3 content (>60%), grown here using a plasma beam source. Information on the behaviour of hydrogen upon annealing is obtained from effusion measurements, which show that hydrogen does not effuse significantly at temperatures less than 500 °C in films grown using methane and 700 °C in films grown using acetylene. Raman measurements show no significant structural changes at temperatures up to 300 °C. At higher temperatures, corresponding to the onset of effusion, the Raman spectra show a clustering of the sp2 phase. The density of states of ta-C:H is directly measured using scanning tunnelling spectroscopy. The measured gradients of the conduction and valence band tails increase up to 300 °C, confirming the occurrence of band tail sharpening. Examination of the photoluminescence background in the Raman spectra shows an increase in photoluminescence intensity with decreasing defect density, providing evidence that paramagnetic defects are the dominant non-radiative recombination centres in ta-C:H.