EPITAXIAL CRYSTALLIZATION OF HIGH-DENSITY POLYETHYLENE ON POLYPROPYLENE IN SOLUTION-CAST FILMS

Epitaxial crystallization of high-density polyethylene (HDPE) on isotactic polypropylene (iPP) in solution-cast films has been investigated by electron microscopy. The specimen-tilt technique of electron microscopy has been used to study the structural relationship between HDPE and iPP crystals. HDPE exhibits different crystalline morphologies in the two basic types of iPP spherulite textures, cross-hatched and lathlike regions. In the former, the crystallographic c axis of HDPE lamellae is in the film plane, while in the latter, the c axis of HDPE crystallites is at an angle of about 50-degrees with the normal of the film. In both structural regions of iPP, however, the contact planes of epitaxial growth are (0 1 0) for iPP and (1 0 0) for HDPE.

Conductive junctions with parallel graphene sheets.

The establishment of conductive graphene-molecule-graphene junction is investigated through first-principles electronic structure calculations and quantum transport calculations. The junction consists of a conjugated molecule connecting two parallel graphene sheets. The effects of molecular electronic states, structure relaxation, and molecule-graphene contact on the conductance of the junction are explored. A conductance as large as 0.38 conductance quantum is found achievable with an appropriately oriented dithiophene bridge. This work elucidates the designing principles of promising nanoelectronic devices based on conductive graphene-molecule-graphene junctions.

Increasing Stability of Lithium-Ion Batteries with Ordered Graphene Silicon Negative Electrodes

Currently, lackluster battery capability is restricting the widespread integration of Smart Grids, limiting the long-term feasibility of alternative, green energy conversion technologies. Silicon nanoparticles have great conductivity for applications in rechargeable batteries, but have degradation issues due to changes in volume during lithiation/delithiation cycles. To combat this, we use electrochemical deposition to uniformly space silicon particles on graphene sheets to create a more stable structure. We found the process of electrochemical deposition degraded the graphene binding in the electrode material, severely reducing charge capacity. But, the usage of mechanically mixing silicon particles with grapheme yielded batteries better than those that are commercially available.

Phase transitions in epitaxial Ba0.5Sr0.5TiO3 thin films

Ba0.5Sr0.5TiO3 (BST) thin-film capacitor structures with various thicknesses, (50-1200 nm) and different strain conditions (on lanthanum strontium cobalt oxide La0.5Sr0.5CoO3 and strontium ruthenate SrRuO3 buffer layers) were made using pulsed laser deposition, and characterized by x-ray diffraction. The out-of-plane lattice parameter was followed as a function of temperature within the 100-300 K temperature interval. The phase sequence (cubic-tetragonal-orthorhombic-rhombohedral) known to exist in the bulk analog is shown to be strongly affected by both the stress conditions imposed by the buffer layer and the thickness of the BST film itself. Thus, no phase transition was found for the in-plane compressed BST films. On the stress-free BST films, on the contrary, more phase transitions were observed. It appeared that the complexity of structural phase transitions increased as the film thickness in this system was reduced.

Strain gradients in epitaxial ferroelectrics

X-ray analysis of ferroelectric thin layers of Ba1/2Sr1/2TiO3 with different thicknesses reveals the presence of strain gradients across the films and allows us to propose a functional form for the internal strain profile. We use this to calculate the influence of strain gradient, through flexoelectric coupling, on the degradation of the ferroelectric properties of films with decreasing thickness, in excellent agreement with the observed behavior. This paper shows that strain relaxation can lead to smooth, continuous gradients across hundreds of nanometers, and it highlights the pressing need to avoid such strain gradients in order to obtain ferroelectric films with bulklike properties.

Changes in surface stress caused by the adsorption of an epitaxial metal monolayer

The adsorption of a metal monolayer on a foreign substrate generates a change in the surface stress. We calculate this change for a number of substrate/adsorbate systems using the embedded-atom method. The results are compared with those obtained from a continuum model. A cycle, in which the stretching of a substrate/adsorbate system is decomposed into several steps, helps in understanding the numerical results. (C) 2000 Elsevier Science B.V. All rights reserved.

Synthesis of Epitaxial Metal Oxide Nanocrystals via a Phase Separation Approach

Perovskite phase instability of BiMnO3 has been exploited to synthesize epitaxial metal oxide magnetic nanocrystals. Thin film processing conditions are tuned to promote the breakdown of the perovskite precursor into Bi2O3 matrix and magnetic manganese oxide islands. Subsequent cooling in vacuum ensures complete volatization of the Bi2O3, thus leaving behind an array of self-assembled magnetic Mn3O4 nanostructures. Both shape and size can be systematically controlled by the ambient oxygen environments and deposition time.As such, this approach can be extended to any other Bi-based complex ternary oxide system as it primarily hinges on the breakdown of parent Bi-based precursor and subsequent Bi2O3 volatization.

Interface mediated resistive switching in epitaxial NiO nanostructures

We report on the non-volatile resistive switching properties of epitaxial nickel oxide (NiO) nanostructures, 10-100 nm wide and up to 30 nm high grown on (001)-Nb:SrTiO3 substrates. Conducting-atomic force microscopy on individual nano-islands confirms prominent bipolar switching with a maximum ON/OFF ratio of similar to 10(3) at a read voltage of similar to+0.4V. This ratio is found to decrease with increasing height of the nanostructure. Linear fittings of I-V loops reveal that low and high resistance states follow Ohmic-conduction and Schottky-emission mechanism, respectively. The switching behavior (dependence on height) is attributed to the modulation of the carrier density at the nanostructure-substrate interface due to the applied electric field.

Epitaxial strain and electric boundary condition effects on the structural and ferroelectric properties of BiFeO3 films

The influence of both compressive and tensile epitaxial strain along with the electrical boundary conditions on the ferroelastic and ferroelectric domain patterns of bismuth ferrite films was studied. BiFeO3 films were grown on SrTiO3(001), DyScO3(110), GdScO3(110), and SmScO3(110) substrates to investigate the effect of room temperature in-plane strain ranging from -1.4% to +0.75%. Piezoresponse force microscopy, transmission electron microscopy, x-ray diffraction measurements, and ferroelectric polarization measurements were performed to study the properties of the films. We show that BiFeO3 films with and without SrRuO3 bottom electrode have different growth mechanisms and that in both cases reduction of the domain variants is possible. Without SrRuO3, stripe domains with reduced variants are formed on all rare earth scandate substrates because of their monoclinic symmetry. In addition, tensile strained films exhibit a rotation of the unit cell with increasing film thickness. On the other side, the presence of SrRuO3 promotes step flow growth of BiFeO3. In case of vicinal SrTiO3 and DyScO3 substrates with high quality SrRuO3 bottom electrode and a low miscut angle of approximate to 0.15 degrees we observed suppression of the formation of certain domain variants. The quite large in-plane misfit of SrRuO3 with GdScO3 and SmScO3 prevents the growth of high quality SrRuO3 films and subsequent domain variants reduction in BiFeO3 on these substrates, when SrRuO3 is used as a bottom electrode.

Epitaxial strain stabilization of ferroelectric phase in PbZrO3 thin films

PbZrO3/SrRuO3/SrTiO3 (100) epitaxial heterostructures with different thickness of the PbZrO3 (PZO) layer (d(PZO) similar to 5-160 nm) were fabricated by pulsed laser deposition. The ultrathin PZO films (d(PZO) <= 10 nm) were found to possess a rhombohedral structure. On increasing the PZO film thickness, a bulk like orthorhombic phase started forming in the film with d(PZO) similar to 22 nm and became abundant in the thicker films. Nanobeam electron diffraction and room-temperature micro-Raman measurements revealed that the stabilization of the rhombohedral phase of PZO could be attributed to the epitaxial strain accommodated by the heterostructures. Room-temperature polarization vs electric field measurements performed on different samples showed characteristic double hysteresis loops of antiferroelectric materials accompanied by a small remnant polarization for the thick PZO films (dPZO >= 50 nm). The remnant polarization increased by reducing the PZO layer thickness, and a ferroelectric like hysteresis loop was observed for the sample with d(PZO) similar to 22 nm. Local ferroelectric properties measured by piezoresponse force microscopy also exhibited a similar thickness-dependent antiferroelectric-ferroelectric transition. Room-temperature electrical properties observed in the PZO thin films in correlation to their structural characteristics suggested that a ferroelectric rhombohedral phase could be stabilized in thin epitaxial PZO films experiencing large interfacial compressive stress.