Epitaxial strain stabilization of ferroelectric phase in PbZrO3 thin films


Autoria(s): Chaudhuri, Ayan Roy; Arredondo-Arechavala, Miryam; Haehnel, Angelika; Morelli, Alessio; Becker, Michael; Alexe, Marin; Vrejoiu, Ionela
Data(s)

12/08/2011

Resumo

PbZrO3/SrRuO3/SrTiO3 (100) epitaxial heterostructures with different thickness of the PbZrO3 (PZO) layer (d(PZO) similar to 5-160 nm) were fabricated by pulsed laser deposition. The ultrathin PZO films (d(PZO) <= 10 nm) were found to possess a rhombohedral structure. On increasing the PZO film thickness, a bulk like orthorhombic phase started forming in the film with d(PZO) similar to 22 nm and became abundant in the thicker films. Nanobeam electron diffraction and room-temperature micro-Raman measurements revealed that the stabilization of the rhombohedral phase of PZO could be attributed to the epitaxial strain accommodated by the heterostructures. Room-temperature polarization vs electric field measurements performed on different samples showed characteristic double hysteresis loops of antiferroelectric materials accompanied by a small remnant polarization for the thick PZO films (dPZO >= 50 nm). The remnant polarization increased by reducing the PZO layer thickness, and a ferroelectric like hysteresis loop was observed for the sample with d(PZO) similar to 22 nm. Local ferroelectric properties measured by piezoresponse force microscopy also exhibited a similar thickness-dependent antiferroelectric-ferroelectric transition. Room-temperature electrical properties observed in the PZO thin films in correlation to their structural characteristics suggested that a ferroelectric rhombohedral phase could be stabilized in thin epitaxial PZO films experiencing large interfacial compressive stress.

Formato

application/pdf

Identificador

http://pure.qub.ac.uk/portal/en/publications/epitaxial-strain-stabilization-of-ferroelectric-phase-in-pbzro3-thin-films(937e8c4b-74cb-4ea1-a4af-874479adbe33).html

http://dx.doi.org/10.1103/PhysRevB.84.054112

http://pure.qub.ac.uk/ws/files/1569926/PZO_PRB_2011.pdf

Idioma(s)

eng

Direitos

info:eu-repo/semantics/restrictedAccess

Fonte

Chaudhuri , A R , Arredondo-Arechavala , M , Haehnel , A , Morelli , A , Becker , M , Alexe , M & Vrejoiu , I 2011 , ' Epitaxial strain stabilization of ferroelectric phase in PbZrO3 thin films ' Physical Review B (Condensed Matter) , vol 84 , no. 5 , 054112 . DOI: 10.1103/PhysRevB.84.054112

Palavras-Chave #/dk/atira/pure/subjectarea/asjc/3100/3104 #Condensed Matter Physics #/dk/atira/pure/subjectarea/asjc/2500/2504 #Electronic, Optical and Magnetic Materials
Tipo

article