Epitaxial silicon growth by rapid thermal CVD

Autoria(s): McNeill, David; Liang, Y.; Montgomery, John; Gamble, Harold; Armstrong, Mervyn
Data(s)

01/09/1991
Identificador

http://pure.qub.ac.uk/portal/en/publications/epitaxial-silicon-growth-by-rapid-thermal-cvd(35f0e7a7-9eb5-4734-891e-103c143c701c).html
Idioma(s)

eng
Direitos

info:eu-repo/semantics/restrictedAccess
Fonte

McNeill , D , Liang , Y , Montgomery , J , Gamble , H & Armstrong , M 1991 , ' Epitaxial silicon growth by rapid thermal CVD ' Journal De Physique Iv , vol 1(C2) , pp. 779-786 .
Tipo

article
Acesso ao item digital