Empirical modelling of submersed macrophytes in Yangtze lakes

Submersed macrophytes in Yangtze lakes have experienced large-scale declines due to the increasing human activities during past decades. To seek the key factor that affects their growth, monthly investigations of submersed macrophytes were conducted in 20 regions of four Yangtze lakes during December, 2001-March, 2003. Analyses based on annual values show that the ratio of Secchi depth to mean depth is the key factor (50% of macrophyte biomass variability among these lakes is statistically explained). Further analyses also demonstrate that the months from March to June are not only the actively growing season for most macrophytes, but the key time the factor acts. Five key-time models yielding higher predictive power (r(2) reaches 0.75,0.76,0.77,0.69 and 0.81) are generated. A comparison between key-time models and traditional synchronic ones indicates that key-time models have higher predictive power. Analyses of transparency thresholds during macrophyte growing season and the limitations of the models are presented. The models and other results may benefit the work concerning submersed macrophyte recovery in Yangtze lakes. (c) 2005 Elsevier B.V. All rights reserved.

Molecular basis of transferrin polymorphism in goldfish (Carassius auratus)

Transferrin (TF) polymorphism was investigated in a color variety of goldfish (Carassius auratus), and its molecular basis analyzed. Three TF variants (A(1), A(2) and B-1) were identified from an inbred strain of the goldfish, of which A(1) and B-1 displayed a large electrophoretic difference on both native and SDS-PAGE gels. The TF cDNAs corresponding to variants A(1) and B-1 were cloned and sequenced from A(1)A(1), A(1)B(1) and B1B1 individuals, and their deduced amino acid sequences were analyzed. Substantial amino acid variation occurred between variants A(1) and B-1, with significant differences in peptide length, theoretical molecular weight (Mw) and isoelectric point (pI). No potential glycosylation sites were observed in the two amino acid sequences, which excluded the possibility that carbohydrate difference might cause electrophoretic variation among the TF variants. Further analysis suggested that the distinct electrophoretic mobility of the two variants A(1) and B-1 by SDS-PAGE resulted from their Mw difference, while the difference by the native PAGE could be explained by their pI variation. Furthermore, genomic DNA fragments containing the transferrin alleles were amplified and subjected to RFLP analysis in A(1)A(1), A(1)B(1) and B1B1 individuals. The data revealed characteristic banding patterns for each TF genotype, and demonstrated that the TF alleles A(1) and B-1 could be used as a co-dominant marker system. The initial work relating to the goldfish TF variants will benefit the understanding of the evolutionary and functional significance of TF polymorphism in fish.

Mechanical and chemical bonding properties of ground state BeH2

The crystal structure, mechanical properties and electronic structure of ground state BeH2 are calculated employing the first-principles methods based on the density functional theory. Our calculated structural parameters at equilibrium volume are well consistent with experimental results. Elastic constants, which well obey the mechanical stability criteria, are firstly theoretically acquired. The bulk modulus B, Shear modulus G, Young's modulus E, and Poisson's ratio upsilon are deduced from the elastic constants. The bonding nature in BeH2 is fully interpreted by combining characteristics in band structure, density of states, and charge distribution. The ionicity in the Be-H bond is mainly featured by charge transfer from Be 2s to H 1s atomic orbitals while its covalency is dominated by the hybridization of H 1s and Be 2p states. The Bader analysis of BeH2 and MgH2 are performed to describe the ionic/covalent character quantitatively and we find that about 1.61 (1.6) electrons transfer from each Be (Mg) atom to H atoms.

8 mu m strain-compensated quantum cascade laser operating at room temperature

We report on the material growth and device performance characterization of a strain-compensated In0.54Ga0.46As/In0.51Al0.49As quantum cascade laser at lambda similar to 8 mu m. For 2 mu s pulse at a 5 kHz repetition rate, laser action is achieved up to room temperature (30 degrees C). The tuning coefficient d lambda/dT is 1.37 nm K-1 between 83 K and 163 K and 0.60 nm K-1 in the range from 183 K to 303 K. The peak output power is reported to be similar to 11.3 mW per facet at 293 K and the corresponding threshold current density is 5.69 kA cm(-2).

Temperature dependence of absorption edge in MOCVD grown GaN

We have studied the temperature dependence of absorption edge of GaN thin films grown on sapphire substrate by metal-organic chemical vapor deposition using optical absorption spectroscopy. A shift in absorption edge of about 55 meV has been observed in temperature range 273-343 K. We have proposed a theoretical model to find the energy gap from absorption coefficient using alpha = alpha(max) + (alpha(min) - alpha(max))/[1 + exp 2(E - E-g + KT)/KT]. Temperature dependence of band gap has also been studied by finding an appropriate theoretical fit to our data using E-g(T) = E-g(273 K) - (8.8 x 10(-4)T(2))/(483 + T) + 0.088 (Varshni empirical formula) and E-g(T) = E-g(273 K)-0.231447/[exp(362/T)-1] + 0.082 relations. It has been found that data can be fitted accurately after adding a factor similar to 0.08 in above equations. Debye temperature (483 K) and Einstein temperature (362 K) in the respective equations are found mutually in good agreement.

Weak antilocalization and beating pattern in an InGaAs/InAlAs quantum well

We have observed the weak antilocalization (WAL) and beating SdH oscillation through magnetotransport measurements performed on a heavily delta-doped In0.52Al0.48As/In0.53Ga0.47As/In0.5Al0.48As single quantum well in an applied magnetic field up to 13 T and a temperature at 1.5 K. Both effects are caused by the strong Rashba spin-orbit (SO) coupling due to high structure inversion asymmetry (SIA). The Rashba SO coupling constant alpha and zerotield spin splitting Delta(0) are estimated and the obtained values are consistent from different analysis for this sample. (c) 2007 Elsevier Ltd. All rights reserved.

Investigation of Ge-Si atomic interdiffusion in Ge nano-dots multilayer structure by double crystal X-ray diffraction

The fluctuations of the strained layer in a superlattice or quantum well can broaden the width of satellite peaks in double crystal X-ray diffraction (DCXRD) pattern. It is found that the width of the 0(th) peak is directly proportional to the fluctuation of the strained layer if the other related facts are ignored. By this method, the Ge-Si atomic interdiffusion in Ge nano-dots and wetting layers has been investigated by DCXRD. It is found that thermal annealing can activate Ge-Si atomic interdiffusion and the interdiffusion in the nano-dots area is much stronger than that in the wetting layer area. Therefore the fluctuation of the Ge layer decreases and the distribution of Ge atoms becomes homogeneous in the horizontal Ge (GeSi actually) layer, which make the width of the 0(th) peak narrow after annealing.

The influence of V/III ratio in the initial growth stage on the properties of GaN epilayer deposited on low temperature AlN buffer layer

The V/III ratio in the initial growth stage of metalorganic chemical vapor deposition has an important influence on the quality of a GaN epilayer grown on a low-temperature AIN buffer layer and c-plane sapphire substrate. A weaker yellow luminescence, a narrower half-width of the X-ray diffraction peak, and a higher electron mobility result when a lower V/III ratio is taken. The intensity of in situ optical reflectivity measurements indicates that the film surface is rougher at the beginning of GaN growth, and a longer time is needed for the islands to coalesce and for a quasi-two dimensional mode growth to start. A comparison of front- and back-illuminated photoluminescence spectra confirms that many threading dislocations are bent during the initial stage, leading to a better structural quality of the GaN layer. (C) 2007 Elsevier B.V. All rights reserved.

An adaptive controller for a class of nonlinear system using direction basis function

For a class of nonlinear dynamical systems, the adaptive controllers are investigated using direction basis function (DBF) in this paper. Based on the criterion of Lyapunov' stability, DBF is designed which guarantees that the output of the controlled system asymptotically tracks the reference signals. Finally, the simulation shows the good tracking effectiveness of the adaptive controller.

Effects of residual C and O impurities on photoluminescence in undoped GaN epilayers

Photoluminescence (PL) was investigated in undoped GaN from 4.8 K to room temperature. The 4.8 K spectra exhibited recombinations of free exciton, donor-acceptor pair (DAP), blue and yellow bands (Ybs). The blue band (BB) was also identified to be a DAP recombination. The YB was assigned to a recombination from deep levels. The energy-dispersive X-ray spectroscopy show that C and O are the main residual impurities in undoped GaN and that C concentration is lower in the epilayers with the stronger BB. The electronic structures of native defects, C and O impurities, and their complexes were calculated using ab initio local-density-functional (LDF) methods with linear muffin-tin-orbital and 72-atomic supercell. The theoretical analyses suggest that the electron transitions from O-N states to C-N and to V-Ga states are responsible for DAP and the BB, respectively, and the electron transitions between the inner levels of the C-N-O-N complex may be responsible for the YB in our samples. (C) 2002 Elsevier Science B.V. All rights reserved.

Microstructure evolution of GaN buffer layer on MgAl2O4 substrate

Microstructure of GaN buffer layer grown on (111)MgAl2O4 substrate by metalorganic vapor phase epitaxy (MOVPE) was studied by transmission electron microscopy (TEM). It has been observed that the early deposition of GaN buffer layer on the substrate at a relatively low temperature formed a continual island-sublayer (5 nm thick) with hexagonal crystallographic structure, and the subsequent GaN buffer deposition led to crystal columns which are composed of nano-crystal slices with mixed cubic and hexagonal phases. After high-temperature annealing, the crystallinity of nano-crystal slices and island-sublayer in the buffer layer have been improved. The formation of threading dislocations in the GaN him is attributed not only to the lattice mismatch of GaN/MgAl2O4 interface, but also to the stacking mismatches at the crystal column boundaries. (C) 1998 Published by Elsevier Science B.V. All rights reserved.

概念设计中基于笔式手势的交互计算研究

基于笔式手势的自然交互是支持概念设计创新的有效方式.提出了一种笔式手势的层次概念模型,结合基于约束的自由勾画和上下文感知技术描述了手势设计方式,进一步讨论了手势内部的约束建立和求解算法;基于手势应用的范式,给出了概念设计中特征手势建模的应用实例,通过与传统建模和交互方式的对比,验证了特征手势建模的方便性.给出一个自然、高效的方法,以基于手势的方式来完成概念设计构思过程,采用笔式交互快速自然地记录下设计思路,所实现的系统方便了用户的创新设计,改善了人机交互模式.