Weak antilocalization and beating pattern in an InGaAs/InAlAs quantum well
| Data(s) |
2007
|
|---|---|
| Resumo |
We have observed the weak antilocalization (WAL) and beating SdH oscillation through magnetotransport measurements performed on a heavily delta-doped In0.52Al0.48As/In0.53Ga0.47As/In0.5Al0.48As single quantum well in an applied magnetic field up to 13 T and a temperature at 1.5 K. Both effects are caused by the strong Rashba spin-orbit (SO) coupling due to high structure inversion asymmetry (SIA). The Rashba SO coupling constant alpha and zerotield spin splitting Delta(0) are estimated and the obtained values are consistent from different analysis for this sample. (c) 2007 Elsevier Ltd. All rights reserved. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Zhou, WZ (Zhou, W. Z.); Lin, T (Lin, T.); Shang, LY (Shang, L. Y.); Yu, G (Yu, G.); Huang, ZM (Huang, Z. M.); Guo, SL (Guo, S. L.); Gui, YS (Gui, Y. S.); Dai, N (Dai, N.); Chu, JH (Chu, J. H.); Cui, LJ (Cui, L. J.); Li, DL (Li, D. L.); Gao, HL (Gao, H. L.); Zeng, YP (Zeng, Y. P.) .Weak antilocalization and beating pattern in an InGaAs/InAlAs quantum well ,SOLID STATE COMMUNICATIONS,AUG 2007,143 (6-7):300-303 |
| Palavras-Chave | #半导体材料 #quantum well |
| Tipo |
期刊论文 |
