Experimental Demonstration on Structure-Parameter Dependence of Photonic Crystal Optical Spectrum

We present fabrication and experimental measurement of a series of photonic crystal waveguides and coupled structure of PC waveguide and PC micro-cavity. The complete devices consist of an injector taper down from 3 mu m into a triangular-lattice air-holes single-line-defect waveguide. We fabricated these devices on a silicon-on-insulator substrate and characterized them using tunable laser source. We've obtained high-efficiency light propagation and broad flat spectrum response of photonic-crystal waveguides. A sharp attenuation at photonic crystal waveguide mode edge was observed for most structures. The edge of guided band is shifted about 31 nm with the 10 nm increase of lattice constant. Mode resonance was observed in coupled structure. Our experimental results indicate that the optical spectra of photonic crystal are very sensitive to structure parameters.

Long-Wavelength Emission InAs Quantum Dots Grown on InGaAs Metamorphic Buffers

In this work, InAs quantum dots (QDs) grown on a linear graded InGaAs metamorphic buffer layer by molecular beam epitaxy have been investigated. The growth of the metamorphic buffer layers was carefully optimized, yielding a smooth surface with a minimum root mean square of roughness of less than 0.98 nm as measured by atomic force microscopy (AFM). InAs QDs were then grown on the buffer layers, and their emission wavelength at room-temperature is 1.49 mu m as measured by photoluminescence (PL). The effects of post-growth rapid thermal annealing (RTA) on the optical properties of the InAs QDs were investigated. After the RTA, the PL peak of the QDs was blue-shifted and the full width at half maximum decreased.

Self-assembled GaAs quantum rings by MBE droplet epitaxy

Fabrication of semiconductor nanostructures such as quantum dots (QDs), quantum rings (QRs) has been considered as the important step for realization of solid state quantum information devices, including QDs single photon emission source, QRs single electron memory unit, etc. To fabricate GaAs quantum rings, we use Molecular Beam Epitaxy (MBE) droplet technique in this report. In this droplet technique, Gallium (Ga) molecular beams are supplied initially without Arsenic (As) ambience, forming droplet-like nano-clusters of Ga atoms on the substrate, then the Arsenic beams are supplied to crystallize the Ga droplets into GaAs crystals. Because the morphologies and dimensions of the GaAs crystal are governed by the interplay between the surface migration of Ga and As adatoms and their crystallization, the shape of the GaAs crystals can be modified into rings, and the size and density can be controlled by varying the growth temperatures and As/Ga flux beam equivalent pressures(BEPs). It has been shown by Atomic force microscope (AFM) measurements that GaAs single rings, concentric double rings and coupled double rings are grown successfully at typical growth temperatures of 200 C to 300 C under As flux (BEP) of about 1.0 x 10(-6) Torr. The diameter of GaAs rings is about 30-50 nm and thickness several nm.

Kinetic Monte Carlo simulation of semiconductor quantum dot growth

Performing an event-based continuous kinetic Monte Carlo (KMC) simulation, We investigate the growth conditions which are important to form semiconductor quantum dot (QD) in molecular beam epitaxy (MBE) system. The simulation results provide a detailed characterization of the atomic kinetic effects. The KMC simulation is also used to explore the effects of periodic strain to the epitaxy growth of QD. The simulation results are in well qualitative agreement with experiments.

DAE系统中两类指标约简修正算法的研究与实现

为了应对设计复杂产品的需求，研究者们提出了一些面向对象、基于组件的建模语言，比如说Modelica 语言。Modelica语言建模中采用了分治的思想，将大型的系统划分成一系列小型组件，极大程度地提高了模型复用性，简化了建模的过程。 Modelica语言构建的模型往往会被转化成一个DAE方程组。在一些情况中，这个DAE是指标数大于1的高指标问题。由于目前对高指标问题不存在通用的求解器，为了求解这类问题，通常的方法是先对问题进行指标约简。 指标约简有两类主流的方法，一类基于微分指标，如Gear算法；另一类基于结构指标，如Pantelides和哑导方法。Gear方法是解决一般高指标问题最为经典的方法，对它的研究和深入分析意义重大。在本文的第一部分，作者提出了一种Gear方法的修正实现。实验结果表明，对于一类特殊结构的DAE，修正实现比起经典实现做了更少的微分，最终得到了规模更小的方程组。 本文另一部分工作集中在对结构指标修正的方面。相比Gear算法，基于结构指标的指标约简算法是一类快速算法，但是并非百分之百有效。在少数情况下，当微分指标与结构指标不一致时，这类方法会失效。为了提高结构指标的适用性，必须首先消除这种不一致性。因此，作者深入分析了处理这一问题的组合松弛型算法，并做出了相应的实现。利用组合松弛型算法，作者进一步对几个Modelica模型导出的DAE方程组进行了处理。实验结果表明，作者所实现的算法解决了微分指标与结构指标不一致的问题。

A low power high linearity baseband for a direct conversation CMMB tuner

An analog baseband circuit made in a 0.35-μm SiGe BiCMOS process is presented for China Multimedia Mobile Broadcasting (CMMB) direct conversion receivers. A high linearity 8th-order Chebyshev low pass filter (LPF) with accurate calibration system is used. Measurement results show that the filter provides 0.5-dB pass-band ripple, 4% bandwidth accuracy, and -35-dB attenuation at 6 MHz with a cutoff frequency of 4 MHz. The current steering type variable gain amplifier (VGA) achieves more than 40-dB gain range with excellent temperature compensation.This tuner baseband achieves an OIP3 of 25.5 dBm, dissipates 16.4 mA under a 2.8-V supply and occupies 1.1 mm~2 of die size.

一种轮足复合式爬壁机器人机构建模与分析

基于行星轮系运动及双足真空吸附原理,提出了一种新型爬壁机器人机构,介绍了机构的构型及结构特点,推导了运动学方程,分析了沿直线行走、平面旋转和跨越交叉壁面三种运动模式.仿真结果表明该机构具有移动速度快、运动灵活、跨越交叉壁面能力强等特点.

全地形轮式移动机器人运动学建模与分析

提出全地形轮式移动机器人的正逆运动学问题。将机器人看成一个混合串-并联多刚体系统,从每个轮-地接触点到机器人车体分别构成一个串联子系统,抛弃车轮纯滚动假设,在轮-地接触点处建立瞬时坐标系,考虑车轮的平面滑移,从而对每个串联子系统形成一个封闭的速度链。对于每个速度闭链,可直接在驱动轮轮心处写出从机器人各驱动轮到机器人本体之间的运动方程,将每个速度闭链的运动方程合并即可得到机器人的整体运动学模型。以一个具有被动柔顺机构的六轮全地形移动机器人为对象进行推导,该方法既考虑了地形不平的影响,又考虑了车轮的前向、侧向及转向滑移,已知机构参数后就可以直接写出机器人的速度方程,且便于运动学求解。该方法对于轮式移动机器人的运动学建模具有一般性,且具有物理意义明确、推导过程简洁等特点。

基于SolidWorks斜齿轮、蜗轮三维建模的研究

详细阐述利用VB6.0进行SolidWorks二次开发的关键技术,论述斜齿轮的三维参数化建模系统开发的具体过程,对比了不同建模方法的特点,提出齿轮三维建模误差分析的两种方法,为模型应用提供了理论指导,同时对该研究方法的拓展性应用举出实例,给出用VB开发SolidWorks一般方法。

新型轮—腿—履带复合移动机构及稳定性分析

为提高反恐防暴机器人对非结构环境的适应能力,设计出了一种具有良好的机动性能和转向性能的新型轮—腿—履带复合移动机构.通过机器人机构分析与本体的稳定性分析,论证了其结构设计的可行性及好的稳定性.

一类非完整约束动力学系统的人工场导向控制

对于一类具有轮式移动机构的非完整动力学系统，本文通过建立人工场的方法来实现其位姿镇定、轨迹跟踪和路径跟踪等控制问题。人工场用于导向和控制方向角，而通过辅助的线速度控制以获取最佳收敛路径。控制器设计中同时兼顾动力学扰动及实际系统速度和输出力矩的饱和限制，所得控制器对于跟踪问题仅需知道期望位姿，而且结构简单、鲁棒性强、便于实现。