Kinetic Monte Carlo simulation of semiconductor quantum dot growth
| Data(s) |
2007
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|---|---|
| Resumo |
Performing an event-based continuous kinetic Monte Carlo (KMC) simulation, We investigate the growth conditions which are important to form semiconductor quantum dot (QD) in molecular beam epitaxy (MBE) system. The simulation results provide a detailed characterization of the atomic kinetic effects. The KMC simulation is also used to explore the effects of periodic strain to the epitaxy growth of QD. The simulation results are in well qualitative agreement with experiments. Performing an event-based continuous kinetic Monte Carlo (KMC) simulation, We investigate the growth conditions which are important to form semiconductor quantum dot (QD) in molecular beam epitaxy (MBE) system. The simulation results provide a detailed characterization of the atomic kinetic effects. The KMC simulation is also used to explore the effects of periodic strain to the epitaxy growth of QD. The simulation results are in well qualitative agreement with experiments. zhangdi于2010-03-29批量导入 zhangdi于2010-03-29批量导入 Natl Ctr Nanosci & Technol.; Natl Steering Comm Nanotechnol. Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China Natl Ctr Nanosci & Technol.; Natl Steering Comm Nanotechnol. |
| Identificador | |
| Idioma(s) |
英语 |
| Publicador |
TRANS TECH PUBLICATIONS LTD LAUBLSRUTISTR 24, CH-8717 STAFA-ZURICH, SWITZERLAND |
| Fonte |
Zhao, C (Zhao, C.); Chen, YH (Chen, Y. H.); Sun, J (Sun, J.); Lei, W (Lei, W.); Cui, CX (Cui, C. X.); Yu, LK (Yu, L. K.); Li, K (Li, K.); Wang, ZG (Wang, Z. G.) .Kinetic Monte Carlo simulation of semiconductor quantum dot growth .见：TRANS TECH PUBLICATIONS LTD .Nanoscience and Technology丛书标题: SOLID STATE PHENOMENA ,LAUBLSRUTISTR 24, CH-8717 STAFA-ZURICH, SWITZERLAND ,2007,Pts 1 and 2 121-123: 1073-1076 Part 1-2 |
| Palavras-Chave | #半导体材料 #Monte Carlo simulation |
| Tipo |
会议论文 |
