999 resultados para semiconducting gallium compounds
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The magnetic characteristics of Ga1-xMnxN nanocrystalline films (x = 0.08 and x = 0.18), grown by reactive sputtering onto amorphous silica substrates (a-SiO2), are shown. Further than the dominant paramagnetic-like behaviour, both field- and temperature-dependent magnetization curves presented some particular features indicating the presence of secondary magnetic phases. A simple and qualitative analysis based on the Brillouin function assisted the interpretation of these secondary magnetic contributions, which were tentatively attributed to antiferromagnetic and ferromagnetic phases. © 2012 Elsevier Masson SAS. All rights reserved.
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Composite films made of lead zirconate titanate ceramic particles coated with polyaniline and poly(vinylidene fluoride) - PZT-PAni/PVDF were produced by hot pressing the powder mixtures in the desired ceramic volume fraction. The ceramic particles were coated during the polyaniline synthesis and the conductivity of the conductor polymer was controlled by different degrees of protonation. Composites were characterized by Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM), ac and dc electrical measurements, the longitudinal d33 piezo coefficient and the photopyroelectric response. Results showed that the presence of PAni increased the dielectric permittivity of the composite and allowed better efficiency in the poling process, which increased the piezo- and pyroelectric activities of the composite film and reduced both the poling time and the poling electric field. The thermal sensing of the material was also analyzed, showing that this composite can be used as pyroelectric sensor. © 2013 IOP Publishing Ltd.
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Thin films of tin dioxide (SnO2) are deposited by the sol-gel-dip-coating technique, along with GaAs layers, deposited by the resistive evaporation technique. The as-built heterojunction has potential application in optoelectronic devices, combining the emission from the rare-earth doped transparent oxide (Eu3+-doped SnO2 presents very efficient red emission) with a high mobility semiconductor. The advantage of this structure is the possibility of separation of the rare-earth emission centers from the electron scattering, leading to a strongly indicated combination for electroluminescence. Electrical characterization of the heterojunction SnO2:Eu/GaAs shows a significant conductivity increase when compared to the conductivity of the individual films, and the monochromatic light irradiation (266 nm) at low temperature of the heterojunction GaAs/SnO2:Eu leads to intense conductivity increase. Scanning electron microscopy (SEM) of the heterojunction cross section shows high adherence and good morphological quality of the interfaces substrate/SnO2 and SnO2/GaAs, even though the atomic force microscopy (AFM) image of the GaAs surface shows disordered particles, which increases with sample thickness. On the other hand, the good morphology of the SnO2:Eu surface, shown by AFM, assures the good electrical performance of the heterojunction. The observed improvement on the electrical transport properties is probably related to the formation of short conduction channels at the semiconductors interface, which may exhibit two-dimensional electron gas (2DEG) behavior. © 2012 Elsevier B.V. All rights reserved.
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Lead zirconate titanate Pb(Zr0.50Ti0.50)O3 (PZT) thin films were deposited by a polymeric chemical method on Pt(111)/Ti/SiO2/Si substrates to understand the mechanisms of phase transformations and the effect of film thickness on the structure, dielectric, and piezoelectric properties in these films. PZT films pyrolyzed at temperatures higher than 350 °C present a coexistence of pyrochlore and perovskite phases, while only perovskite phase grows in films pyrolyzed at temperatures lower than 300 °C. For pyrochlore-free PZT thin films, a small (100)-orientation tendency near the film-substrate interface was observed. Finally, we demonstrate the existence of a self-polarization effect in the studied PZT thin films. The increase of self-polarization with the film thickness increasing from 200 nm to 710 nm suggests that Schottky barriers and/or mechanical coupling near the film-substrate interface are not primarily responsible for the observed self-polarization effect in our films. © 2013 AIP Publishing LLC.
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This paper presents a novel time domain approach for Structural Health Monitoring (SHM) systems based on Electromechanical Impedance (EMI) principle and Principal Component Coefficients (PCC), also known as loadings. Differently of typical applications of EMI applied to SHM, which are based on computing the Frequency Response Function (FRF), in this work the procedure is based on the EMI principle but all analysis is conducted directly in time-domain. For this, the PCC are computed from the time response of PZT (Lead Zirconate Titanate) transducers bonded to the monitored structure, which act as actuator and sensor at the same time. The procedure is carried out exciting the PZT transducers using a wide band chirp signal and getting their time responses. The PCC are obtained in both healthy and damaged conditions and used to compute statistics indexes. Tests were carried out on an aircraft aluminum plate and the results have demonstrated the effectiveness of the proposed method making it an excellent approach for SHM applications. Finally, the results using EMI signals in both frequency and time responses are obtained and compared. © The Society for Experimental Mechanics 2014.
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PbO-BiO 1.5-GaO 1.5-based glasses are good candidates for optical applications, because of some of their interesting characteristics, such as high refraction indices and high transmission in the ultraviolet (UV), visible (VIS), and infrared (IR) regions. A limited stage in the processing of these glasses is the corrosion that is caused by the melt in all currently used conventional crucibles, such as noble metals (platinum or gold) and Al 2O 3. The absorption of crucible material by the glass composition may reduce the transmission level, the cutoff in the UV-VIS, and IR regions, and the thermal stability. In this study, a SnO 2 crucible has been tested for PbO-BiO 1.5-GaO 1.5 molten glass. Optical and thermal analyses show, in some cases, advantages over the use of platinum and Al 2O 3 crucibles. A visible cutoff value of 474 nm has been measured, and a longer melting time (850°C for 4 h) results in a significant reduction of the O-H absorption band at 3.2 μm.
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The composite SmBa2Cu3O7-delta (Sm-123), obtained by the substitution of the ion Y for Sm in the very well known and studied YBa2Cu3O7-delta (Y-123), is potentially attractive for better understanding superconductivity mechanisms and for its applications as electronic devices. Sm-123 samples show higher critical temperatures than Y-123 ones do and a larger solubility of Sm in Ba-Cu-O solvent, which makes their growth process faster. When oxygen is present interstitially, it strongly affects the physical properties of the material. The dynamics of oxygen can be investigated by anelastic spectroscopy measurements, a powerful technique for the precise determination of the oscillation frequency and the internal friction when atomic jumps are possible. Anelastic spectroscopy allows determining the elasticity modulus (related to the oscillation frequency) and the elastic energy loss (related to the internal friction) as a function of the temperature. The sample was also investigated by X-ray diffraction (XRD), scanning electronic microscopy (SEM), and electric resistivity. The results obtained show a thermally activated relaxation structure composed by at least 3 relaxation processes. These processes may be attributed to the jumps of oxygen atoms present of the Cu-O plane in the orthorhombic phase.
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IR-visible upconversion fluorescence spectroscopy and thermal effects in pr(3+)/Yb3+-codoped Ga2O3:La2S3 chalcogenide glasses excited at 1.064 mum is reported. Intense visible upconversion emission in the wavelength region of 480-680 nm peaked around 500, 550, 620 and 660 nm is observed. Upconversion excitation of the Pr3+ excited-state visible emitting levels is achieved by st combination of phonon-assisted absorption, energy-transfer and phonon-assisted excited-state absorption processes. A threefold upconversion emission enhancement induced by thermal effects when the codoped sample was heated in the temperature range of 20-200 degreesC is demonstrated. The thermal-induced enhancement is attributed to a multiphonon-assisted anti-Stokes process which takes place in the excitation of the ytterbium and excited-state absorption of the praseodymium. The thermal effect is modelled by conventional rate equations considering temperature-dependent effective absorption cross-sections for the F-2(7/2)-F-2(5/2) ytterbium transition and (1)G(4)-P-3(0) praseadymium excited-state absorption, and it is shown to agree very well with experimental results. Frequency upconversion in singly Pr3+-doped samples pumped at 836 nm and 1.064 mum in a two-beam configuration is also examined.
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A structural study of CuO supported on a CeO2-TiO2 system was undertaken using X-ray diffraction (XRD) and X-ray absorption spectroscopy (XAS) techniques. The results of XRD revealed the presence of only two phases, TiO2 anatase and CeO2 cerianite. A trend towards smaller TiO2 crystallites was observed when cerium content increased. When the amount of cerium increased, Ti K-edge XANES analysis showed an increasing distortion of Ti sites. The results of Ce LIII-edge EXAFS showed that Ce atoms are coordinated by eight oxygen atoms at 2.32 Å. For the sample containing a small amount of cerium, the EXAFS analysis indicated that the local structure around Ce atoms was highly distorted. The catalysts presented quite different Cu K-edge XANES spectra compared to the spectra of the CuO and Cu2O reference compounds. The Cu-O mean bond length was close to that of the CuO and the Cu atoms in the catalysts are surrounded by approximately four oxygen atoms in their first shell. Copper supported on the ceria-modified titania support catalysts displayed a better performance in the methanol dehydrogenation when compared to copper supported only on titania or on ceria. © 2002 Plenum Publishing Corporation.
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Five new open-framework compounds of gallium have been synthesized by hydrothermal methods and their structures determined by single crystal X-ray diffraction studies. The compounds, C8N4H26]Ga6F4(PO4)(6)], I, C5N3H11]Ga3F2(PO4)(3)]center dot H2O, II, C6N3H19]Ga-4(C2O4)(PO4)(4)(H2PO4)]center dot 2H(2)O, III, Ga2F3(HPO4)(PO4)]center dot 2H(3)O, IV, and C3N2H5](2)Ga-4(H2O)(3)(HPO3)(7)], V, possess three-dimensional structures. All the compounds are formed by the connectivity between the Ga polyhedra and phosphite/phosphate units. The observation of SBU-6 (I and II) and spiro-5 (IV) secondary building units (SBUs) are noteworthy. The flexibility of the formation of gallium phosphate frameworks has been established by the isolation of two related structures (I and II) from the same SBU units but different organic amines. Some of the present structures have close resemblance to the gallium phosphate phases known earlier. The compounds have been characterized by CHN analysis, powder XRD, IR, and TGA. (C) 2011 Elsevier B. V. All rights reserved.
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Over 70% of nosocomial infections in the United States are resistant to one or more traditional antibiotics, necessitating research for alternative treatment options. This study aims to chelate gallium (Ga) onto a bacterial siderophore, desferrioxamine (DFO), to retard bacterial growth. By exploiting natural bacterial pathways, metal-siderophore treatments are hypothesized to circumvent traditional resistance mechanisms. Additionally, the GaDFO complex will be tested against several bacterial species to determine the specificity of DFO uptake. This research aims to prove the feasibility of siderophore piracy as an alternative to antibiotics. In showing the feasibility of siderophore piracy mechanisms, this research will enable the development of future avenues for protecting against resistant nosocomial infections.
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The synthesis and crystal structure of four gallium sulphide open frameworks, built from supertetrahedral clusters, are described. The structures of [C4NH12]6[Ga10S18][C4NH12]6[Ga10S18](1) and [C4NH12]12[Ga20S35.5(S3)0.5O](2) contain supertetrahedral T3 clusters, while in the isostructural compounds [C4NH12]16[Ga10S18M4Ga16S33][C4NH12]16[Ga10S18M4Ga16S33] (M=CoM=Co(3), Zn (4)), T3 and T4 clusters alternate. These materials exhibit three-dimensional frameworks, with topologies consisting of two interpenetrating diamond lattices, and contain over 50% of solvent accessible void space. UV–Vis diffuse reflectance measurements indicate that these compounds are semiconducting, with band gaps over the range 3.4–4.1 eV.
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)