Electronic structure and optical properties of triangular GaAs/AlGaAs quantum dots: Exciton and impurity states
| Contribuinte(s) |
Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín, Colombia Department of Physics, Donbass State Engineering Academy, Shkadinova 72, 84313 Kramatorsk, Ukraine Centro de Investigación en Ciencias, Instituto de Investigación en Ciencias Básicas y Aplicadas, Universidad Autónoma del Estado de Morelos, Av. Universidad 1001, CP 62209 Cuernavaca, Morelos, Mexico Cumhuriyet University, Physics Department, 58140 Sivas, Turkey Department of Physics, Dokuz Eylül University, 35160 Buca, Izmir, Turkey Universidad de Medellín, Carrera 87 No 30-65 Medellín, Colombia Cumhuriyet University, Faculty of Technology, Deparment of Optical Engineering, 58140 Sivas, Turkey |
|---|---|
| Data(s) |
2016
23/06/2016
23/06/2016
|
| Identificador |
9214526 http://hdl.handle.net/11407/2273 10.1016/j.physb.2015.12.045 |
| Idioma(s) |
eng |
| Publicador |
Elsevier |
| Relação |
Physica B: Condensed Matter Volume 484, 1 March 2016, Pages 95–108 http://www.sciencedirect.com/science/article/pii/S0921452615303768 |
| Direitos |
info:eu-repo/semantics/restrictedAccess restrictedAccess |
| Fonte |
Scopus |
| Palavras-Chave | #Binding energy #Electric fields #Electronic structure #Excitons #Gallium arsenide #Nanocrystals #Nonlinear optics #Quantum theory #Semiconducting gallium #Semiconductor quantum dots #Dc electric field #Donor and acceptor #Electronic structure and optical properties #Exciton energies #Excitonic state #Non-linear optical properties #Photoluminescence peak #Shallow impurities #Optical properties |
| Tipo |
info:eu-repo/semantics/article Article in Press |
