Magnetic characteristics of nanocrystalline GaMnN films deposited by reactive sputtering


Autoria(s): Leite, D. M G; Pereira, A. L J; Iwamoto, W. A.; Pagliuso, P. G.; Lisboa Filho, Paulo Noronha; Silva, José Humberto Dias da
Contribuinte(s)

Universidade Estadual Paulista (UNESP)

Data(s)

27/05/2014

27/05/2014

29/01/2013

Resumo

The magnetic characteristics of Ga1-xMnxN nanocrystalline films (x = 0.08 and x = 0.18), grown by reactive sputtering onto amorphous silica substrates (a-SiO2), are shown. Further than the dominant paramagnetic-like behaviour, both field- and temperature-dependent magnetization curves presented some particular features indicating the presence of secondary magnetic phases. A simple and qualitative analysis based on the Brillouin function assisted the interpretation of these secondary magnetic contributions, which were tentatively attributed to antiferromagnetic and ferromagnetic phases. © 2012 Elsevier Masson SAS. All rights reserved.

Formato

97-101

Identificador

http://dx.doi.org/10.1016/j.solidstatesciences.2012.11.020

Solid State Sciences, v. 17, p. 97-101.

1293-2558

http://hdl.handle.net/11449/74430

10.1016/j.solidstatesciences.2012.11.020

WOS:000316437100016

2-s2.0-84872765751

Idioma(s)

eng

Relação

Solid State Sciences

Direitos

closedAccess

Palavras-Chave #Diluted magnetic semiconductor #GaMnN #Magnetic properties #Nanocrystalline material #Sputtering #Amorphous silica #Antiferromagnetics #Brillouin functions #Diluted magnetic semiconductors #Ferromagnetic phasis #Magnetic characteristic #Magnetic contribution #Magnetization curves #Nanocrystalline films #Nanocrystallines #Qualitative analysis #Secondary magnetic phasis #Temperature dependent #Antiferromagnetism #Gallium alloys #Magnetic semiconductors #Manganese #Nanocrystalline materials #Paramagnetism #Semiconducting gallium #Silica #Amorphous films
Tipo

info:eu-repo/semantics/article