Study on growth mechanism of low-temperature prepared microcrystalline Si thin films

Microcrystalline silicon thin films at different growth stages were prepared by hot wire chemical vapor deposition. Atomic force microscopy has been applied to investigate the evolution of surface topography of these films. According to the fractal analysis I it was found that, the growth of Si film deposited on glass substrate is the zero-diffused stochastic deposition; while for the film on Si substrate, it is the finite diffused deposition on the initial growth stage, and transforms to the zero-diffused stochastic deposition when the film thickness reaches a certain value. The film thickness dependence of island density shows that a maximum of island density appears at the critical film thickness for both substrates. The data of Raman spectra approve that, on the glass substrate, the a-Si: H/mu c-Si:H transition is related to the critical film thickness. Different substrate materials directly affect the surface diffusion ability of radicals, resulting in the difference of growth modes on the earlier growth stage.

Electrical properties and electroluminescence of 4H-SiC p-n junction diodes

Homoepitaxial growth of 4H-SiC on off-oriented Si-face(0001) substrates was performed by using the step-controlled epitaxy technique in a newly developed low-pressure hot-wall CVD (LP-HWCVD) system with a horizontal air-cooled quartz tube at around 1500 degreesC and 1.33 x 10(4) Pa by employing SiH4 + C2H4 + H-2. In-situ doping during growth was carried out by adding NH3 gas into the precursor gases. It was shown that the maximum Hall mobility of the undoped 4H-SiC epilayers at room temperature is about 430 cm(2) (.) V-1 (.) s(-1) with a carrier concentration of similar to 10(16) cm(-3) and the highest carrier concentration of the N-doped 4H-SiC epilayer obtained at NH3 flow rate of 3 sccm is about 2.7 x 10(21) cm(-3) with a mobility of 0.75 cm(2) (.) V-1 (.) s(-1). SiC p-n junctions were obtained by epitaxially growing N-doped 4H-SiC epilayers on Al-doped 4H-SiC substrates. The C - V characteristics of the diodes were linear in the 1/C-3 - V coordinates indicating that the obtained p-n junctions were graded with a built-in voltage of 2.7 eV. The room temperature electroluminescence spectra of 4H-SiC p-n junctions are studied as a function of forward current. The D-A pair recombination due to nitrogen donors and the unintentional, deep boron center is dominant at low forward bias, while the D-A pair recombination due to nitrogen donors and aluminum acceptors are dominant at higher forward biases. The p-n junctions could operate at temperature of up to 400 degreesC, which provides a potential for high-temperature applications.

Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces

The morphological defects and uniformity of 4H-SiC epilayers grown by hot wall CVD at 1500 degrees C on off-oriented (0001) Si faces are characterized by atomic force microscope, Nomarski optical microscopy, and Micro-Raman spectroscopy. Typical morphological defects including triangular defects, wavy steps, round pits, and groove defects are observed in mirror-like SiC epilayers. The preparation of the substrate surface is necessary for the growth of high-quality 4H-SiC epitaxial layers with low-surface defect density under optimized growth conditions. (c) 2006 Elsevier Ltd. All rights reserved.

Influence of heated catalyzer on thermal distribution of substrate in HWCVD system

Based on Stefan-Boltzman and Lambert theorems, the radiation energy distribution on substrate (REDS) from catalyzer with parallel filament geometry has been simulated by variation of filament and system layout in hot-wire chemical vapor deposition. The REDS uniformity is sensitive to the distance between filament and substrate d(f-s) when d(f-s) less than or equal to 4 cm. As d(f-s) > 4 cm, the REDS uniformity is independent of d(f-s) and is mainly determined by filament number and filament separation. Two-dimensional calculation shows that the REDS uniformity is limited by temperature decay at filament edges. The simulation data are in good agreement with experiments. (C) 2003 Elsevier Science B.V. All rights reserved.

High epitaxial growth rate of 4H-SiC using TCS as silicon precursor

High homoepitaxial growth of 4H-SiC has been performed in a home-made horizontal hot wall CVD reactor on n-type 4H-SiC 8 degrees off-oriented substrates in the size of 10 mm x 10 mm, using trichlorosilane (TCS) as silicon precursor source together with ethylene as carbon precursor source. Cross-section Scanning Electron Microscopy (SEM), Raman scattering spectroscopy and Atomic Force Microscopy (AFM) were used to determine the growth rate, structural property and surface morphology, respectively. The growth rate reached to 23 mu m/h and the optimal epilayer was obtained at 1600 degrees C with TCS flow rate of 12 seem in C/Si of 0.42, which has a good surface morphology with a low Rms of 0.64 nm in 10 mu mx10 mu m area.

High quality microcrystalline Si films by hydrogen dilution profile

Novel hydrogen dilution profiling (HDP) technique was developed to improve the uniformity in the growth direction of mu c-Si:H thin films prepared by hot wire chemical vapor deposition (HWCVD). It was found that the high H dilution ratio reduces the incubation layer from 30 nm to less than 10 nm. A proper design of hydrogen dilution profiling improves the uniformity of crystalline content, X-c, in the growth direction and restrains the formation of micro-voids as well. As a result the compactness of mu c-Si:H films with a high crystalline content is enhanced and the stability of mu c-Si:H thin film against the oxygen diffusion is much improved. Meanwhile the HDP mu c-Si:H films exhibit the low defect states. The high nucleation density from high hydrogen dilution at early stage is a critical parameter to improve the quality of mu c-Si:H films. (c) 2006 Published by Elsevier B.V.

Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces

The morphological defects and uniformity of 4H-SiC epilayers grown by hot wall CVD at 1500 degrees C on off-oriented (0001) Si faces are characterized by atomic force microscope, Nomarski optical microscopy, and Micro-Raman spectroscopy. Typical morphological defects including triangular defects, wavy steps, round pits, and groove defects are observed in mirror-like SiC epilayers. The preparation of the substrate surface is necessary for the growth of high-quality 4H-SiC epitaxial layers with low-surface defect density under optimized growth conditions. (c) 2006 Elsevier Ltd. All rights reserved.

Homoepitaxial growth and MOS structures of 4H-SiC on off oriented n-type (0001)Si-faces

Homoepitaxial growth of 4H-SiC on off-oriented n-type Si-face (0001) substrates was performed in a home-made hot-wall low pressure chemical vapor deposition (LPCVD) reactor with SiH4 and C2H4 at temperature of 1500 C and pressure of 20 Torr. The surface morphology and intentional in-situ NH3 doping in 4H-SiC epilayers were investigated by using atomic force microscopy (AFM) and secondary ion mass spectroscopy (SIMS). Thermal oxidization of 4H-SiC homoepitaxial layers was conducted in a dry O-2 and H-2 atmosphere at temperature of 1150 C. The oxide was investigated by employing x-ray photoelectron spectroscopy (XPS). 4H-SiC MOS structures were obtained and their C-V characteristics were presented.

Epitaxial growth on 4H-SiC by TCS as a silicon precursor

Epitaxial growth on n-type 4H-SiC 8°off-oriented substrates with a size of 10 × 10 mm~2 at different tem-peratures with various gas flow rates has been performed in a horizontal hot wall CVD reactor, using trichlorosilane (TCS) as a silicon precursor source together with ethylene as a carbon precursor source. The growth rate reached 23 μm/h and the optimal epilayer was obtained at 1600 ℃ with a TCS flow rate of 12 sccm in C/Si of 0.42, which has a good surface morphology with a low RMS of 0.64 nm in an area of 10 × 10μm~2. The homoepitaxial layer was oh-tained at 1500 ℃ with low growth rate (< 5μm/h) and the 3C-SiC epilayers were obtained at 1650 ℃ with a growth rate of 60-70μm/h. It is estimated that the structural properties of the epilayers have a relationship with the growth temperature and growth rate. Silicon droplets with different sizes are observed on the surface of the homoepitaxial layer in a low C/Si ratio of 0.32.

Influence of heated catalyzer on thermal distribution of substrate in HWCVD system

Based on Stefan-Boltzman and Lambert theorems, the radiation energy distribution on substrate (REDS) from catalyzer with parallel filament geometry has been simulated by variation of filament and system layout in hot-wire chemical vapor deposition. The REDS uniformity is sensitive to the distance between filament and substrate d(f-s) when d(f-s) less than or equal to 4 cm. As d(f-s) > 4 cm, the REDS uniformity is independent of d(f-s) and is mainly determined by filament number and filament separation. Two-dimensional calculation shows that the REDS uniformity is limited by temperature decay at filament edges. The simulation data are in good agreement with experiments. (C) 2003 Elsevier Science B.V. All rights reserved.

The influence of compliant surfaces on bypass transition', Experiments in Fluids

The objective of the work was to investigate the effect of compliant surfaces on the receptivity and bypass transition of a boundary layer. Hot wire measurements in the pre-transitional and transitional boundary layers on nine different compliant and one rigid surface with identical geometries were made. The experiments were conducted in air and the compliant surfaces were manufactured from gelatine covered by a 10 lm protective PVC film. The laminar boundary layer profiles and growth rate results were the same for all the surfaces. However, the receptivity of the laminar boundary layer to freestream disturbances increased close to the leading edge of each compliant surface. Further downstream the majority of the compliant surfaces were successful in reducing the receptivity to a value below that for the rigid surface. The transition onset position on the compliant surfaces ranged from 3% downstream to 20% upstream of the rigid surface position. It was concluded that compliant surfaces with optimum properties can reduce receptivity and delay transition.

Thermal conductivities of ionic liquids over the temperature range from 293 K to 353 K

The thermal conductivities of 11 ionic liquids were determined, over the temperature range from 293 K to 353 K, at atmospheric pressure, using an apparatus based on the transient hot-wire method. For each of the ionic liquids studied, the thermal conductivities were found to be between (0.1 and 0.2) W.m(-1).K-1, with a slight decrease observed on increasing temperature. The uncertainty is estimated to be less than +/- 0.002 W.m(-1).K-1. In all cases, a linear equation was found to give a good fit to the data. The effects of water content and chloride content on the thermal conductivities of some of the ionic liquids were investigated. In each case, the thermal conductivities of the water + ionic liquid and chloride + ionic liquid binary mixtures were found to be less than the weighted average of the pure component thermal conductivities. This effect was adequately modeled using the Jamieson correlation. Chloride contamination at typical postsynthesis levels was found to have no significant effect on the thermal conductivities of the ionic liquid studied.

Experimental analysis of air flow profiles in a double skin facade in a maritime climate

Glazed Double Skin Facades (DSF) offer the potential to improve the performance of all-glass building skins, common to commercial office buildings in which full facade glazing has almost become the standard. Single skin glazing results in increased heating and cooling costs over opaque walls, due to lower thermal resistance of glass, and the increased impact of solar gain through it. However, the performance benefit of DSF technology continues to be questioned and its operation poorly understood, particularly the nature of airflow through the cavity. This paper deals specifically with the experimental analysis of the air flow characteristics in an automated double skin façade. The benefit of the DSF as a thermal buffer, and to limit overheating is evaluated through analysis of an extensive set of parameters including air and surface temperatures at each level in the DSF, airflow readings in the cavity and at the inlet and outlet, solar and wind data, and analytically derived pressure differentials. The temperature and air-flow are monitored in the cavity of a DSF using wireless sensors and hot wire anemometers respectively. Automated louvre operation and building set-points are monitored via the BMS. Thermal stratification and air flow variation during changing weather conditions are shown to effect the performance of the DSF considerably and hence the energy performance of the building. The relative pressure effects due to buoyancy and wind are analysed and quantified. This research aims to developed and validate models of DSFs in the maritime climate, using multi-season data from experimental monitoring. This extensive experimental study provides data for training and validation of models.

Analyse selbsterregter Strömungsfelder im Verdichter-Leitrad durch Kopplung von Particle Image Velocimetry und Hitzdrahtanemometrie mittels Fast Fourier Transformation

Der Einsatz der Particle Image Velocimetry (PIV) zur Analyse selbsterregter Strömungsphänomene und das dafür notwendige Auswerteverfahren werden in dieser Arbeit beschrieben. Zur Untersuchung von solchen Mechanismen, die in Turbo-Verdichtern als Rotierende Instabilitäten in Erscheinung treten, wird auf Datensätze zurückgegriffen, die anhand experimenteller Untersuchungen an einem ringförmigen Verdichter-Leitrad gewonnen wurden. Die Rotierenden Instabilitäten sind zeitabhängige Strömungsphänomene, die bei hohen aerodynamischen Belastungen in Verdichtergittern auftreten können. Aufgrund der fehlenden Phaseninformation kann diese instationäre Strömung mit konventionellen PIV-Systemen nicht erfasst werden. Die Kármánsche Wirbelstraße und Rotierende Instabilitäten stellen beide selbsterregte Strömungsvorgänge dar. Die Ähnlichkeit wird genutzt um die Funktionalität des Verfahrens anhand der Kármánschen Wirbelstraße nachzuweisen. Der mittels PIV zu visualisierende Wirbeltransport erfordert ein besonderes Verfahren, da ein externes Signal zur Festlegung des Phasenwinkels dieser selbsterregten Strömung nicht zur Verfügung steht. Die Methodik basiert auf der Kopplung der PIV-Technik mit der Hitzdrahtanemometrie. Die gleichzeitige Messung mittels einer zeitlich hochaufgelösten Hitzdraht-Messung ermöglicht den Zeitpunkten der PIV-Bilder einen Phasenwinkel zuzuordnen. Hierzu wird das Hitzdrahtsignal mit einem FFT-Verfahren analysiert, um die PIV-Bilder entsprechend ihrer Phasenwinkel zu gruppieren. Dafür werden die aufgenommenen Bilder auf der Zeitachse der Hitzdrahtmessungen markiert. Eine systematische Analyse des Hitzdrahtsignals in der Umgebung der PIV-Messung liefert Daten zur Festlegung der Grundfrequenz und erlaubt es, der markierten PIV-Position einen Phasenwinkel zuzuordnen. Die sich aus den PIV-Bildern einer Klasse ergebenden Geschwindigkeitskomponenten werden anschließend gemittelt. Aus den resultierenden Bildern jeder Klasse ergibt sich das zweidimensionale zeitabhängige Geschwindigkeitsfeld, in dem die Wirbelwanderung der Kármánschen Wirbelstraße ersichtlich wird. In hierauf aufbauenden Untersuchungen werden Zeitsignale aus Messungen in einem Verdichterringgitter analysiert. Dabei zeigt sich, dass zusätzlich Filterfunktionen erforderlich sind. Im Ergebnis wird schließlich deutlich, dass die Übertragung der anhand der Kármánschen Wirbelstraße entwickelten Methode nur teilweise gelingt und weitere Forschungsarbeiten erforderlich sind.

Análise da indução de fluxo de ar por convecção livre em chaminé solar

Experiments were performed to study the effect of surface properties of a vertical channel heated by a source of thermal radiation to induce air flow through convection. Two channels (solar chimney prototype) were built with glass plates, forming a structure of truncated pyramidal geometry. We considered two surface finishes: transparent and opaque. Each stack was mounted on a base of thermal energy absorber with a central opening for passage of air, and subjected to heating by a radiant source comprises a bank of incandescent bulbs and were performed field tests. Thermocouples were fixed on the bases and on the walls of chimneys and then connected to a data acquisition system in computer. The air flow within the chimney, the speed and temperature were measured using a hot wire anemometer. Five experiments were performed for each stack in which convective flows were recorded with values ranging from 17 m³ / h and 22 m³ / h and air flow velocities ranging from 0.38 m / s and 0.56 m / s for the laboratory tests and air velocities between 0.6 m/s and 1.1m/s and convective airflows between 650 m³/h and 1150 m³/h for the field tests. The test data were compared to those obtained by semi-empirical equations, which are valid for air flow induced into channels and simulated data from 1st Thermodynamics equation. It was found that the chimney with transparent walls induced more intense convective flows than the chimney with matte finish. Based on the results obtained can be proposed for the implementation of prototype to exhaust fumes, mists, gases, vapors, mists and dusts in industrial environments, to help promote ventilation and air renewal in built environments and for drying materials, fruits and seeds