Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces
| Data(s) |
2006
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| Resumo |
The morphological defects and uniformity of 4H-SiC epilayers grown by hot wall CVD at 1500 degrees C on off-oriented (0001) Si faces are characterized by atomic force microscope, Nomarski optical microscopy, and Micro-Raman spectroscopy. Typical morphological defects including triangular defects, wavy steps, round pits, and groove defects are observed in mirror-like SiC epilayers. The preparation of the substrate surface is necessary for the growth of high-quality 4H-SiC epitaxial layers with low-surface defect density under optimized growth conditions. (c) 2006 Elsevier Ltd. All rights reserved. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Sun GS (Sun G. S.); Liu XF (Liu X. F.); Gong QC (Gong Q. C.); Wang L (Wang L.); Zhao WS (Zhao W. S.); Li JY (Li J. Y.); Zeng YP (Zeng Y. P.); Li JM (Li J. M.) .Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces ,MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2006 ,9(1-3):275-278 |
| Palavras-Chave | #半导体材料 #4H-SiC #homoepitaxial layers #surface morphological defect #optical microscopy #SILICON-CARBIDE #DISLOCATIONS #FILMS |
| Tipo |
期刊论文 |
