Electro-optic integration of liquid crystal cladding switch with multimode passive polymer waveguides on PCB

Optical switching functionality is demonstrated in PCB integrated multimode passive polymer waveguides using a localised liquid-crystal cladding structure. Waveguide switching contrast of 15 dB is achieved with only 0.5 dB of on-state excess loss. © 2009 OSA.

1.3 μm quantum-dot electro-absorption modulator

The electro-absorption properties and Stark-shift of 1.3μm InGaAs quantum dot waveguide modulators are characterized under reverse bias. 2.5Gb/s data modulation is demonstrated for the first time with clear eye diagrams and error-free back-to-back performance. © 2007 Optical Society of America.

High-speed 2 x 2 silicon-based electro-optic switch with nanosecond switch time

A 2 x 2 electro-optic switch is experimentally demonstrated using the optical structure of a Mach-Zehnder interferometer (MZI) based on a submicron rib waveguide and the electrical structure of a PIN diode on silicon-on-insulator (SOI). The switch behaviour is achieved through the plasma dispersion effect of silicon. The device has a modulation arm of I mm in length and cross-section of 400 nmx340 nm. The measurement results show that the switch has a V pi L pi figure of merit of 0.145 V-cm and the extinction ratios of two output ports and cross talk are 40 dB, 28 dB and -28 dB, respectively. A 3 dB modulation bandwidth of 90 MHz and a switch time of 6.8 ns for the rise edge and 2.7 ns for the fall edge are also demonstrated.

Microwave generation in an electro-absorption modulator integrated with a DFB laser subject to optical injection

This paper presents a new technique to generate microwave signal using an electro-absorption modulator (EAM) integrated with a distributed feedback (DFB) laser subject to optical injection. Experiments show that the frequency of the generated microwave can be tuned by changing the wavelength of the external laser or adjusting the bias voltage of the EAM. The frequency response of the EAM is studied and found to be unsmooth due to packaging parasitic effects and four-wave mixing effect occurring in the active layer of the DFB laser. It is also demonstrated that an EA modulator integrated in between two DFB lasers can be used instead of the EML under optical injection. This integrated chip can be used to realize a monolithically integrated tunable microwave source. (C) 2009 Optical Society of America

Analysis of interdigital electro-optic Bragg diffraction grating

Some integrated optics devices can be made based on the interdigital electro-optic Bragg diffraction grating. The point-matching method is extended to the analysis of interdigital electro-optic Bragg diffraction gratings. This method provides a simple and fast analytic expression of the electric field in the structure. The field distributions are used to calculate the optical and electrical characteristic parameters of the gratings. The effects of finite conductor thickness have been taken into account in the analysis. It is shown that the simulation results agree well with the measured data.

Silicon-on-insulator based electro-optic variable optical attenuator with a series structure

An electro-optic variable optical attenuator in silicon-on-insulator is designed and fabricated. A series Structure is used to improve the device efficiency Compared to the attenuator in the single p-i-n diode Structure in the same modulating length, the attenuation range of the device in the series structure improves 2-3 times in the same injecting current density, while the insertion loss is not affected. The maximum dynamic attenuation of the device is greater than 30 dB. The response frequency is obtained to be about 2 MHz.

Butt-coupled MOVPE growth for high-performance electro-absorption modulator integrated with a DFB laser

A novel butt-joint coupling scheme is proposed to improve the coupling efficiency for the integration of a GalnAsP MQW distributed feedback (DFB) laser with an MQW electro-absorption modulator (EAM). The proposed method gives more than 90% coupling efficiency, being much higher than the 26% coupling efficiency of the common MQW-MQW coupling technique. The differential quantum efficiency of the MQW-bulk-MQW coupled device is also much higher than that of the MQW-MQW device, 0.106 mW/mA versus 0.02 mW/mA. The EAM-DFB devices fabricated by the proposed method exhibit a very high modulation efficiency (12 dB/V) from 0 to I V. By adopting a high-mesa ridge waveguide and buried polyimide, the capacitance of the modulator is reduced to about 0.28 pF. The experimental results demonstrate that the method can replace the conventional MQW-MQW coupling technique to fabricate high-quality integrated photonic devices. (C) 2007 Elsevier B.V. All rights reserved.

Simple reflection technique for measuring the linear electro-optic coefficient of the polymer thin films

The simple reflection technique is usually used to measure the linear electro-optic (EO) coefficient (Pockels coefficient) in the development of EO polymer thin films. But there are some problems in some articles in the determination of the phase shift between the s and p light modes of a laser beam waveguided into the polymer film while a modulating voltage is applied across the electrodes, and different expressions for the linear EO coefficient measured have been given in these articles. In our research, more accurate expression of the linear EO coefficient was deduced by suitable considering the phase shift between the s and p light modes. The linear EO coefficients of several polymer thin films were measured by reflection technique, and the results of the Linear EO coefficient calculated by different expressions were compared. The limit of the simple reflection technique for measuring the linear EO coefficient of the polymer thin films was discussed.

Design of Si-based Electro-optical modulator employed dual capacitors - art. no. 68381B

Electro-optical modulator with dual capacitors is designed and based on this design basic configuration of device is realized in laboratory. Exceeding GHz switching speed and high phase modulation efficiency can be expected with this device.

Wavelength tunable distributed Bragg reflector laser integrated with electro-absorption modulator by a combined method of selective area growth and quantum well intermixing - art. no. 68240N

Wavelength tunable electro-absorption modulated distributed Bragg reflector lasers (TEMLs) are promising light source in dense wavelength division multiplexing (DWDM) optical fiber communication system due to high modulation speed, small chirp, low drive voltage, compactness and fast wavelength tuning ability. Thus, increased the transmission capacity, the functionality and the flexibility are provided. Materials with bandgap difference as large as 250nm have been integrated on the same wafer by a combined technique of selective area growth (SAG) and quantum well intermixing (QWI), which supplies a flexible and controllable platform for the need of photonic integrated circuits (PIC). A TEML has been fabricated by this technique for the first time. The component has superior characteristics as following: threshold current of 37mA, output power of 3.5mW at 100mA injection and 0V modulator bias voltage, extinction ratio of more than 20 dB with modulator reverse voltage from 0V to 2V when coupled into a single mode fiber, and wavelength tuning range of 4.4nm covering 6 100-GHz WDM channels. A clearly open eye diagram is observed when the integrated EAM is driven with a 10-Gb/s electrical NRZ signal. A good transmission characteristic is exhibited with power penalties less than 2.2 dB at a bit error ratio (BER) of 10(-10) after 44.4 km standard fiber transmission.

A Wavelength Tunable DBR Laser Integrated with an Electro Absorption Modulator by a Combined Method of SAG and QWI

We report a wavelength tunable electro-absorption modulated DBR laser based on a combined method of SAG and QWI. The threshold current is 37mA and the output power at 100mA gain current is 3.5mW. When coupled to a single-mode fiber with a coupling efficiency of 15% ,more than a 20dB extinction ratio is observed over the change of EAM bias from 0 to -2V. The 4.4nm continuous wavelength tuning range covers 6 channels on a 100GHz grid for WDM telecommunications.

SOI thermo-optic modulator with fast response

Silicon-on-insulator (SOI) technology offers tremendous potential for integration of optoelectronic functionson a silicon wafer. In this letter, a 1 * 1 multimode interference (MMI) Mach-Zender interferometer(MZI) thermo-optic modulator fabricated by wet-etching method is demonstrated. The modulator has anextinction ratio of -11.0 dB, extra loss of -4.9 dB and power consumption of 420 mW. The response timeis less than 30μs.

Multiple quantum well self electro-optic effect devices for optoelectronic smart pixels

The investigations on GaAs/AlGaAs multiple quantum well self electro-optic effect device (SEED) arrays for optoelectronic smart pixels are reported. The hybrid integration of GaAs/AlGaAs multiple quantum well devices flip-chip bonding directly over 1 mu m silicon CMOS circuits are demonstrated. The GaAs/AlGaAs multiple quantum well devices are designed for 850nm operation. The measurement results under applied biases show the good optoelectronic characteristics of elements in SEED arrays. The 4x4 optoelectronic crossbar structure consisting of hybrid CMOS-SEED smart pixels have been designed, which could be potentially used in optical interconnects for multiple processors.