High-speed 2 x 2 silicon-based electro-optic switch with nanosecond switch time

A 2 x 2 electro-optic switch is experimentally demonstrated using the optical structure of a Mach-Zehnder interferometer (MZI) based on a submicron rib waveguide and the electrical structure of a PIN diode on silicon-on-insulator (SOI). The switch behaviour is achieved through the plasma dispersion effect of silicon. The device has a modulation arm of I mm in length and cross-section of 400 nmx340 nm. The measurement results show that the switch has a V pi L pi figure of merit of 0.145 V-cm and the extinction ratios of two output ports and cross talk are 40 dB, 28 dB and -28 dB, respectively. A 3 dB modulation bandwidth of 90 MHz and a switch time of 6.8 ns for the rise edge and 2.7 ns for the fall edge are also demonstrated.

National Natural Science Foundation of China 60577044 State Key Development Program for Basic Research of China 2007CB613405 National High Technology Research and Development Program of China 2006AA032424 Project supported by the National Natural Science Foundation of China (Grant No 60577044) the State Key Development Program for Basic Research of China (Grant No 2007CB613405) and the National High Technology Research and Development Program of China (Grant No 2006AA032424).